SSF7NS65UF
650V N-Channel MOSFET
Main Product Characteristics
VDSS
650V
RDS(on)
0.6Ω (typ.)
ID
7A
①
TO-220F
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
Description
The SSF7NS65UF series MOSFET is a new technology, which combines an innovative super junction
technology and advance process.
This new technology achieves low RDS(ON), energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
7 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
5①
IDM
Pulsed Drain Current ②
28
Power Dissipation ③
33
W
Linear Derating Factor
0.264
W/°C
VDS
Drain-Source Voltage
650
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=100mH
98
mJ
IAS
Avalanche Current @ L=100mH
1.4
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
Units
A
Rev.1.0
SSF7NS65UF
650V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case ③
—
3.8
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
80
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
unless otherwise specified
Min.
Static Drain-to-Source on-resistance
Typ.
Max.
Units
V
650
—
—
—
0.6
0.75
—
1.3
—
—
0.64
0.9
—
1.5
—
2
—
4
—
2.2
—
—
—
1
—
—
50
—
—
100
—
—
-100
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Total gate charge
—
13
—
Qgs
Gate-to-Source charge
—
2.6
—
Qgd
Gate-to-Drain("Miller") charge
—
3.1
—
td(on)
Turn-on delay time
—
12
—
tr
Rise time
—
7.5
—
td(off)
Turn-Off delay time
—
30
—
tf
Fall time
—
18
—
Ciss
Input capacitance
—
500
—
Coss
Output capacitance
—
24
—
Crss
Reverse transfer capacitance
—
3
—
Ω
Ω
V
μA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
TJ = 125°C
VGS=10V,ID = 2.8A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS =650V,VGS = 0V
TJ = 125°C
nA
VGS =30V
VGS = -30V
ID = 5A,
nC
VDS=200V,
VGS = 10V
ns
VGS=10V, VDS =400V,
RGEN=10.2Ω,ID =1.5A
VGS = 0V
pF
VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
7 ①
A
—
—
28
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.8
1.2
V
IS=2.8A, VGS=0V
trr
Reverse Recovery Time
—
126
—
nS
TJ = 25°C, IF = 1.5A,
Qrr
Reverse Recovery Charge
—
560
—
nC
di/dt = 100A/μs
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Page 2 of 7
Rev.1.0
SSF7NS65UF
650V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 7
Rev.1.0
SSF7NS65UF
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Figure 4: Normalized On-Resistance Vs. Case
Case Temperature
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Temperature
Page 4 of 7
Rev.1.0
SSF7NS65UF
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7.Drain-to-Source Voltage Vs. Gate-to-Source Voltage
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Page 5 of 7
Rev.1.0
SSF7NS65UF
650V N-Channel MOSFET
Mechanical Data
TO220F PACKAGE OUTLINE DIMENSION_GN
Symbol
E
E1
E2
A
A1
A2
A3
c
D
D1
H1
e
ФP
ФP 1
ФP 2
ФP 3
L
L1
L2
Q1
Q2
b1
b2
b3
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Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
9.840
10.040
10.240
6.800
7.000
7.200
4.600
4.700
4.800
2.440
2.540
2.640
2.660
2.760
2.860
0.600
0.700
0.800
0.500
15.780
15.870
15.980
8.970
9.170
9.370
6.500
6.700
6.800
2.54BSC
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780
12.980
13.180
2.970
3.170
3.370
0.830
0.930
1.030
o
o
o
3
5
7
o
43
1.180
0.760
-
o
45
1.280
0.800
-
o
47
1.380
0.840
1.420
Page 6 of 7
Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
0.621
0.353
0.256
0.121
0.055
0.035
0.004
0.503
0.117
0.033
o
3
o
43
0.046
0.030
-
Dimension In Inches
Nom
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
0.125
0.059
0.039
0.008
0.511
0.125
0.037
o
5
o
45
0.050
0.031
-
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
0.629
0.369
0.268
0.129
0.063
0.043
0.012
0.519
0.133
0.041
o
7
o
47
0.054
0.033
0.056
Rev.1.0
SSF7NS65UF
650V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF7NS65UF
Package (Available)
TO-220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-220F
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Rev.1.0