SSF11NS65F
650V N-Channel MOSFET
Main Product Characteristics
VDSS
650V
RDS(on)
0.36ohm(typ.)
ID
11A
TO220F
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
Description
The SSF11NS65F series MOSFET is a new technology which combines an innovative super junction
technology and advance process. This new technology achieves low RDS(ON), energy saving,
high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
11
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
7
IDM
Pulsed Drain Current②
44
Units
A
Power Dissipation③
32.8
W
Linear Derating Factor
0.26
W/°C
VDS
Drain-Source Voltage
650
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=22.5mH
281
mJ
IAS
Avalanche Current @ L=22.5mH
5
A
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
Rev.1.2
SSF11NS65F
650V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case③
—
3.8
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Electrical Characteristics @TA=25℃
unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
Conditions
650
—
—
—
0.36
0.41
—
0.88
—
2
—
4
—
2.46
—
—
—
1
—
—
50
—
—
100
-100
—
—
VGS = -30V
Total gate charge
—
28.41
—
ID = 11A,
Qgs
Gate-to-Source charge
—
6.64
—
Qgd
Gate-to-Drain("Miller") charge
—
12.34
—
VGS = 10V
td(on)
Turn-on delay time
—
12.85
—
VGS=10V, VDS=300V,
tr
Rise time
—
9.45
—
td(off)
Turn-Off delay time
—
30.40
—
tf
Fall time
—
6.30
—
ID=5.5A
Ciss
Input capacitance
—
824.8
—
VGS = 0V
Coss
Output capacitance
—
78.06
—
Crss
Reverse transfer capacitance
—
2.75
—
Ω
VGS = 0V, ID = 250μA
VGS=10V,ID = 5.5A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
nA
nC
ns
pF
VDS =650V,VGS = 0V
TJ = 125°C
VGS =30V
VDS=480V,
RL=54.5Ω,
RGEN=4.7Ω
VDS = 50V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
11
A
—
—
44
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.5
V
IS=11A, VGS=0V
trr
Reverse Recovery Time
—
313
—
ns
TJ = 25°C, IF =11A, di/dt =
Qrr
Reverse Recovery Charge
—
2.98
—
uC
100A/μs
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Page 2 of 7
Rev.1.2
SSF11NS65F
650V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C
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Page 3 of 7
Rev.1.2
SSF11NS65F
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Typ. Gate to source cut-off voltage
Figure 1: Power dissipation
Figure 3. Typ. gate charge
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Figure 4: Typ. Capacitances
Page 4 of 7
Rev.1.2
SSF11NS65F
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Drain-source breakdown voltage
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Figure 6. Drain-source on-state resistance
Page 5 of 7
Rev.1.2
SSF11NS65F
650V N-Channel MOSFET
Mechanical Data
TO220F PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
A3
B1
B2
B3
C
C1
C2
D
D1
D2
D3
E
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
7.000
3.080
3.180
3.280
9.260
9.460
9.660
15.670
15.870
16.070
4.500
4.700
4.900
6.480
6.680
6.880
3.200
3.300
3.400
15.600
15.800
16.000
9.550
9.750
9.950
2.54 (TYP)
1.470
0.700
0.800
0.900
0.250
0.350
0.450
E1
2.540
0.700
E2
E3
E4
1.0*450
0.500
2.760
ϴ
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2.340
0.450
2.560
2.740
0.600
2.960
300
Min
0.392
0.276
0.121
0.365
0.617
0.177
0.255
0.126
0.614
0.376
0.028
0.010
0.092
0.018
0.101
Dimension In Inches
Nom
0.400
0.000
0.125
0.372
0.625
0.185
0.263
0.130
0.622
0.384
1.00 (TYP)
0.031
0.014
0.100
0.028
1.0*450
0.020
0.109
Max
0.408
0.000
0.129
0.380
0.633
0.193
0.271
0.134
0.630
0.392
0.058
0.035
0.018
0.108
0.024
0.117
300
Page 6 of 7
Rev.1.2
SSF11NS65F
650V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF11NS65F
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Packag
e Type
Units/Tu
be
TO220F
50
Tubes/Inner
Box
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
Units/Carton
Box
6000
Rev.1.2