SSF6670 60V Dual N-Channel MOSFET DESCRIPTION The SSF6670 uses advanced trench technology to provide excellent RDS (ON) and low gate charge. Schematic Diagram GENERAL FEATURES ● VDS = 60V,ID =3.5A RDS(ON) <120mΩ @ VGS=4.5V RDS(ON) <90mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF6670 SSF6670 SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±25 V ID(25℃) 3.5 A ID(70℃) 2.8 A IDM 20 A PD 2.4 W TJ,TSTG -55 To 175 ℃ R θJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.goodark.com BVDSS VGS=0V ID=250μA Page 1 of 6 60 V Rev.2.1 SSF6670 60V Dual N-Channel MOSFET Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 10 μA Gate-Body Leakage Current IGSS VGS=±25V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 3 V Drain-Source On-State Resistance RDS(ON) ON CHARACTERISTICS (Note 3) Forward Transconductance g FS 1 VGS=4.5V, ID=2A 80 120 mΩ VGS=10V, ID=3A 65 90 mΩ VDS=10V,ID=3A 3 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=25V,VGS=0V, F=1.0MHz 500 PF 50 PF Output Capacitance C oss Reverse Transfer Capacitance C rss 40 PF Turn-on Delay Time td(on) 6 nS Turn-on Rise Time tr 5 nS 16 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDS=30V,VGS=10V,RGEN=3Ω ID=1A td(off) Turn-Off Fall Time tf 3 nS Total Gate Charge Qg 7 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 3 nC Body Diode Reverse Recovery Time Trr 27 nS Body Diode Reverse Recovery Charge Qrr 32 nC VDS=48V,ID=3A,VGS=4.5V IF=4A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=1.7A 1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 6 Rev.2.1 V SSF6670 60V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen D toff tf td(off) 90% Rl Vin ton tr td(on) Vout VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 4 Drain Current ID- Drain Current (A) Vds Drain-Source Voltage (V) www.goodark.com Page 3 of 6 Rev.2.1 SSF6670 60V Dual N-Channel MOSFET Figure 5 Output CHARACTERISTICS ID- Drain Current (A) Normalized On-Resistance Figure 6 Drain-Source On-Resistance Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds www.goodark.com Is- Reverse Drain Current (A) Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Page 4 of 6 Rev.2.1 SSF6670 60V Dual N-Channel MOSFET Vsd Source-Drain Voltage (V) Qg Gate Charge (nC) Figure 12 Source- Drain Diode Forward ID- Drain Current (A) Figure 11 Gate Charge Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 5 of 6 Rev.2.1 SSF6670 60V Dual N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 6 of 6 Rev.2.1