SSF3626 30V Dual N-Channel MOSFET DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6.9A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 35mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3626 SSF3626 SOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V ID(25℃) 6.9 A ID(70℃) 5.5 A IDM 30 A PD 2.8 W TJ,TSTG -55 To 150 ℃ R θJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.goodark.com BV DSS VGS=0V ID=250μA Page 1 of 4 30 V Rev.1.0 SSF3626 30V Dual N-Channel MOSFET Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,V DS=0V ±100 nA Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 3 V Drain-Source On-State Resistance R DS(ON) ON CHARACTERISTICS (Note 3) Forward Transconductance g FS 1.5 VGS=4.5V, ID=4.9A 41 51 mΩ VGS=10V, ID=5.9A 25 35 mΩ VDS=10V,ID=5.9A 5 S 550 PF 100 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 50 PF Turn-on Delay Time td(on) 5 nS Turn-on Rise Time tr 25 nS 12 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDS=15V,VGS=10V,RGEN=3..2Ω ID=4.7A td(off) Turn-Off Fall Time tf 10 nS Total Gate Charge Qg 9 nC Gate-Source Charge Q gs 1.8 nC Gate-Drain Charge Qgd 1.7 nC Body Diode Reverse Recovery Time T rr 20 nS Body Diode Reverse Recovery Charge Q rr 12 nC VDS=15V,ID=5.9A,VGS=10V IF=4.7A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=4.7A 1 1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 V SSF3626 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr Vout 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1: Switching Test Circuit ZthJA Normalized Transient Thermal Resistance Figure 2:Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF3626 30V Dual N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0