SSF6010A 60V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product BV=60V R DS (ON)=8mΩ (typ.) DESCRIPTION The SSF6010A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6010A is assembled in high reliability and qualified assembly house. APPLICATIONS Power switching application SSF6010A Top View (D2PAK) Absolute Maximum Ratings Parameter ID@Tc=25ْ C Max. Continuous drain current,VGS@10V 75 ID@Tc=100ْC Continuous drain current,VGS@10V 45 Units A Pulsed drain current ① 300 Power dissipation 144 W Linear derating factor 0.74 W/ْ C VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 220 mJ EAR Repetitive avalanche energy TBD IDM PD@TC=25ْC TJ TSTG Operating Junction and –55 to +175 Storage Temperature Range ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case — 1.04 — RθJA Junction-to-ambient — — 62 Units ْC/W Electrical Characteristics @T J=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 60 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 8 10 mΩ VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA S VDS=5V,ID=30A gfs IDSS IGSS Forward transconductance — 58 — — — 2 — — 10 Gate-to-Source forward leakage — — 100 Gate-to-Source reverse leakage — — -100 Drain-to-Source leakage current www.goodark.com Page 1 of 5 VDS=60V,VGS=0V μA VDS=60V, VGS=0V,TJ=150ْC nA VGS=20V VGS=-20V Rev.1.1 SSF6010A 60V N-Channel MOSFET Total gate charge — 45 — Qgs Gate-to-Source charge — 4.2 — Qgd Gate-to-Drain("Miller") charge — 15 — td(on) Turn-on delay time — 14.6 — Rise time — 14.2 — Turn-Off delay time — 40 — Qg tr td(off) ID=30A VDD=30V nC VGS=10V VDD=30V ID=2A ,RL=15Ω nS RG=2.5Ω Fall time — 7.3 — VGS=10V Ciss Input capacitance — 1480 — VGS=0V Coss Output capacitance — 190 — Crss Reverse transfer capacitance — 135 — tf pF VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-on Time Min. Typ. Max. — — 75 Units Test Conditions MOSFET symbol showing the A integral reverse — — 300 — — 1.3 V TJ=25ْC,IS=40A,VGS=0V ③ — 33 — nS TJ=25ْC,IF=60A — 61 — nC di/dt=100A/μs ③ p-n junction diode. Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 30V,Id=37A. ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C. EAS test circuit www.goodark.com Gate charge test circuit Page 2 of 5 Rev.1.1 SSF6010A 60V N-Channel MOSFET Switch Time Test Circuit Switch Waveforms Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature www.goodark.com Page 3 of 5 Rev.1.1 SSF6010A 60V N-Channel MOSFET Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve www.goodark.com Page 4 of 5 Rev.1.1 SSF6010A 60V N-Channel MOSFET TO263(D2PAK) MECHANICAL DATA www.goodark.com Page 5 of 5 Rev.1.1