SSF6010
60V N-Channel MOSFET
FEATURES
ID =64A
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
BV=60V
RDS(ON)=11mΩ (typ.)
DESCRIPTION
The SSF6010 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6010 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF6010 Top View (TO-220)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C
Max.
Continuous drain current,VGS@10V
64
ID@Tc=100ْC Continuous drain current,VGS@10V
45
Units
A
Pulsed drain current ①
300
Power dissipation
144
W
Linear derating factor
0.74
W/ْ C
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
220
mJ
EAR
Repetitive avalanche energy
TBD
IDM
PD@TC=25ْC
TJ
TSTG
Operating Junction and
–55 to +175
Storage Temperature Range
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
1.04
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
Test Conditions
BVDSS Drain-to-Source breakdown voltage
60
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
11
13
mΩ
VGS=10V,ID=30A
VGS(th) Gate threshold voltage
2.0
4.0
V
VDS=VGS,ID=250μA
S
VDS=5V,ID=30A
gfs
IDSS
IGSS
Forward transconductance
—
58
—
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Drain-to-Source leakage current
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Page 1 of 5
VDS=60V,VGS=0V
μA
VDS=60V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Rev.2.4
SSF6010
60V N-Channel MOSFET
Total gate charge
—
45
—
Qgs
Gate-to-Source charge
—
4.2
—
Qgd
Gate-to-Drain("Miller") charge
—
15
—
td(on)
Turn-on delay time
—
14.6
—
Rise time
—
14.2
—
Turn-Off delay time
—
40
—
Qg
tr
td(off)
ID=30A
VDD=30V
nC
VGS=10V
VDD=30V
ID=2A ,RL=15Ω
nS
RG=2.5Ω
Fall time
—
7.3
—
VGS=10V
Ciss
Input capacitance
—
1480
—
VGS=0V
Coss
Output capacitance
—
190
—
Crss
Reverse transfer capacitance
—
135
—
tf
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous
Source
Current
(Body Diode)
Pulsed
Source
Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
Forward Turn-on Time
Min.
Typ.
Max.
—
—
75
Units
Test Conditions
MOSFET symbol
showing the
A
integral reverse
—
—
300
—
—
1.3
V
TJ=25ْC,IS=40A,VGS=0V ③
—
33
—
nS
TJ=25ْC,IF=60A
—
61
—
nC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A.
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C.
EAS test circuit
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Gate charge test circuit
Page 2 of 5
Rev.2.4
SSF6010
60V N-Channel MOSFET
Switch Time Test Circuit
Switch Waveforms
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
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Page 3 of 5
Rev.2.4
SSF6010
60V N-Channel MOSFET
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
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Page 4 of 5
Rev.2.4
SSF6010
60V N-Channel MOSFET
TO-220 MECHANICAL DATA
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
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Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
70
0
7
30
0
3
Page 5 of 5
E
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
70
0
7
Min
0.087
0.050
0.390
-
50
70
90
10
30
50
Rev.2.4