SSF0115
Feathers:
ID =3A
Advanced trench process technology
BV=100V
avalanche energy, 100% test
Rdson=0.15Ω
Fully characterized avalanche voltage and current
Description:
The SSF0115 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
SSF0115 TOP View (SOT-223)
and electrical parameter repeatability. SSF0115 is assembled
in high reliability and qualified assembly house.
Application:
IEEE802.3AF Compatible
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
3
ID@Tc=100ْC
Continuous drain current,VGS@10V
2.3
IDM
Pulsed drain current ①
12
Power dissipation
1.8
W
Linear derating factor
0.019
W/ ْC
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
79
mJ
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
TJ
Operating Junction and
TSTG
Storage Temperature Range
PD@TC=25ْC
Units
A
v/ns
–55 to +150
ْC
Thermal Resistance
RθJA
Parameter
Min.
Typ.
Max.
Units
Junction-to-ambient
—
—
69
C/W
*When mounted on the minimum pas size recommended（PCB Mount）.
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
0.09
0.15
Ω
VGS=10V,ID=2A
VGS(th)
2.0
—
4.0
V
VDS=VGS,ID=250μA
—
—
1
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Gate threshold voltage
Drain-to-Source leakage current
©Silikron Semiconductor CO.,LTD.
2009.6.10
Max. Units
Test Conditions
VDS=30V,VGS=0V
μA
VDS=100V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Version : 1.0
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SSF0115
18
—
22
ID=9.2A,VGS=10V
Qg
Total gate charge
Qgs
Gate-to-Source charge
—
2.7
—
Qgd
Gate-to-Drain("Miller") charge
—
7.8
—
td(on)
Turn-on delay time
—
12
40
Rise time
—
12
40
Turn-Off delay time
—
33
85
Fall time
—
26
68
VGS=10V
Ciss
Input capacitance
—
350
480
VGS=0V
Coss
Output capacitance
—
90
110
Crss
Reverse transfer capacitance
—
35
45
tr
td(off)
tf
nC
VDD=80V,RL=8.6Ω
VDD=50V
nS
pF
ID=9.2A ,RL=5.4Ω
RG=18Ω
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
.
Forward Turn-on Time
.
Min.
Typ.
Max.
—
—
3
Units
Test Conditions
MOSFET symbol
showing the
A
integral reverse
—
—
18
—
—
1.3
V
TJ=25ْC,IS=3A,VGS=0V ③
－
98
—
nS
TJ=25ْC,IF=9.2A
－
0.34
—
μC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =30mH, VDD = 50V,Id=2.3A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
©Silikron Semiconductor CO.,LTD.
2009.6.10
Version : 1.0
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SSF0115
EAS Test Circuit:
Gate Charge Test Circuit:
Switch Time Test Circuit:
Switch Waveform:
Gate Charge
©Silikron Semiconductor CO.,LTD.
Source-Drain Diode Forward Voltage
2009.6.10
Version : 1.0
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SSF0115
On Resistance vs Junction Temperature
Safe Operation Area
Breakdown Voltage vs Junction Temperature
Max Drain Current vs Junction Temperature
Transient Thermal Impedance Curve
©Silikron Semiconductor CO.,LTD.
2009.6.10
Version : 1.0
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SSF0115
SOT-223 MECHANICAL DATA:
©Silikron Semiconductor CO.,LTD.
2009.6.10
Version : 1.0
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