SSF1016
Feathers:
ID =75A
Advanced trench process technology
BV=100V
avalanche energy, 100% test
Rdson=16mΩ(Max.）
Fully characterized avalanche voltage and current
Description:
The SSF1016 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
SSF1016 TOP View (T0-220)
and electrical parameter repeatability. SSF1016 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
75
ID@Tc=100ْC
Continuous drain current,VGS@10V
65
IDM
Pulsed drain current ①
300
Power dissipation
227
W
Linear derating factor
1.5
W/ ْC
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
380
mJ
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
31
v/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
–55 to +150
ْC
PD@TC=25ْC
Units
A
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.55
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
100
—
—
RDS(on) Static Drain-to-Source on-resistance
—
11
16
VGS(th)
2.0
—
4.0
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Gate threshold voltage
Drain-to-Source leakage current
©Silikron Semiconductor CO.,LTD.
2009.8.10
Max. Units
V
Test Conditions
VGS=0V,ID=250μA
mΩ VGS=10V,ID=30A
V
VDS=VGS,ID=250μA
VDS=100V,VGS=0V
μA VDS=100V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Version : 1.0
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SSF1016
90
—
ID=30A,VGS=10V
Qg
Total gate charge
Qgs
Gate-to-Source charge
—
20
—
Qgd
Gate-to-Drain("Miller") charge
—
31
—
td(on)
Turn-on delay time
—
18.2
Rise time
—
15.6
Turn-Off delay time
—
70.5
Fall time
—
13.8
VGS=10V
Ciss
Input capacitance
—
3150
VGS=0V
Coss
Output capacitance
—
350
Crss
Reverse transfer capacitance
—
240
tr
td(off)
tf
nC
VDD=30V
VDD=30V
nS
ID=2A ,RL=15Ω
RG=2.5Ω
pF VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
.
Forward Turn-on Time
.
Min.
Typ.
Max.
—
—
75
Units
Test Conditions
MOSFET symbol
showing the
A
integral reverse
—
—
300
—
—
1.3
V
TJ=25ْC,IS=60A,VGS=0V ③
－
57
—
nS
TJ=25ْC,IF=75A
－
107
—
μC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 50V,Id=37A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS Test Circuit:
©Silikron Semiconductor CO.,LTD.
Gate Charge Test Circuit:
2009.8.10
Version : 1.0
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SSF1016
Switch Time Test Circuit:
Switch Waveform:
Transfer Characteristic
Capacitance
On Resistance vs Junction Temperature
Breakdown Voltage vs Junction Temperature
©Silikron Semiconductor CO.,LTD.
2009.8.10
Version : 1.0
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SSF1016
Source-Drain Diode Forward Voltage
Gate Charge
Safe Operation Area
Max Drain Current vs Junction
Transient Thermal Impedance Curve
©Silikron Semiconductor CO.,LTD.
2009.8.10
Version : 1.0
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SSF1016
TO-220 MECHANICAL DATA:
©Silikron Semiconductor CO.,LTD.
2009.8.10
Version : 1.0
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