SSFN3317 30V P-Channel MOSFET D DESCRIPTION The SSFN3317 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS =-30V,ID =-7A RDS(ON) < 36mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management DFN3×3-8L Bottom View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSFN3317 SSFN3317 DFN3x3-8L - - - ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V ID(25℃) -7 A ID(70℃) -5.5 A IDM -40 A PD 3.1 W TJ,TSTG -55 To 150 ℃ R θJA 40 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS V DS=-30V,VGS=0V www.goodark.com Page 1 of 4 -30 V -1 μA Rev.1.0 SSFN3317 30V P-Channel MOSFET Gate-Body Leakage Current IGSS VGS=±25V,V DS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -2.2 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-6A 26 36 mΩ VGS=-10V, ID=-8A 14 18 mΩ VDS=-5V,ID=-10A 18 S 1200 PF 260 PF ON CHARACTERISTICS (Note 3) Forward Transconductance g FS -1.7 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=-15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance C rss 145 PF Turn-on Delay Time td(on) 10 nS Turn-on Rise Time tr 9 nS 22 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDS=-15V,V GS=-10V,RGEN=3Ω ID=1A Turn-Off Fall Time tf 8 nS Total Gate Charge Qg 18 nC Gate-Source Charge Q gs 5 nC Gate-Drain Charge Q gd 3.5 nC Body Diode Reverse Recovery Time T rr 24 nS Body Diode Reverse Recovery Charge Qrr 12 nC VDS=-15V,ID=-10A,V GS=-10V IF=-10A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=-1A -0.74 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 SSFN3317 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSFN3317 30V P-Channel MOSFET DFN3×3-8L PACKAGE INFORMATION TOP VIEW BOTTOM VIEW COMMON DIMENSIONS(MM) SIDE VIEW PKG. REF. A A1 A3 D E b L D2 E2 e W： VERY VERY THIN MIN. NOM. MAX. 0.70 0.75 0.80 0.00 － 0.05 0.2REF. 2.95 3.00 3.05 2.95 3.00 3.05 0.25 0.30 0.35 0.30 0.40 0.50 2.30 2.45 2.55 2.50 1.65 1.75 0.65BSC NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0