SSF18N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A TO- 220F Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 18 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 10.8 IDM Pulsed Drain Current② 72 Power Dissipation③ 38 W Linear Derating Factor 0.3 W/°C VDS Drain-Source Voltage 500 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=5.2mH 315 mJ IAS Avalanche Current @ L=5.2mH 11 A -55 to + 150 °C PD @TC = 25°C TJ TSTG www.goodark.com Operating Junction and Storage Temperature Range Page 1 of 7 A Rev.1.0 SSF18N50F 500V N-Channel MOSFET Thermal Resistance Symbol Characteristics RθJC RθJA Typ. Max. Units Junction-to-case③ — 3.3 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characteristics @TA=25℃ Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg unless otherwise specified Min. Typ. Max. Units V Conditions 500 — — — 0.22 0.35 — 0.49 — 2 — 4 — 3.1 — — — 1 — — 50 — — 100 -100 — — Total gate charge — 39.4 — Qgs Gate-to-Source charge — 18.3 — Qgd Gate-to-Drain("Miller") charge — 8.9 — VGS = 10V td(on) Turn-on delay time — 54.3 — VGS=10V, VDS =270V, tr Rise time — 80.3 — td(off) Turn-Off delay time — 77.3 — tf Fall time — 45.0 — ID =18A Ciss Input capacitance — 2360 — VGS = 0V Coss Output capacitance — 290 — Crss Reverse transfer capacitance — 6 — Ω VGS = 0V, ID = 250μA VGS=10V,ID = 9A TJ = 125℃ V VDS = VGS, ID = 250μA TJ = 125℃ μA VDS = 500V,VGS = 0V TJ = 125℃ nA VGS =30V VGS = -30V ID = 18A, nC nS pF VDS=400V, RL=15Ω, RGEN=25Ω VDS = 25V ƒ = 400KHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 18 A — — 72 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.92 1.3 V IS=18A, VGS=0V trr Reverse Recovery Time — 450 — nS TJ = 25°C, IF =18A, di/dt = Qrr Reverse Recovery Charge — 6250 — nC 100A/μs www.goodark.com Page 2 of 7 Rev.1.0 SSF18N50F 500V N-Channel MOSFET Test Circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires. www.goodark.com Page 3 of 7 Rev.1.0 SSF18N50F 500V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage vs. Figure 4: Normalized On-Resistance Vs. Case Temperature www.goodark.com Temperature Page 4 of 7 Rev.1.0 SSF18N50F 500V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6.Typical Capacitance Vs. Drain-to-Source Temperature Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.goodark.com Page 5 of 7 Rev.1.0 SSF18N50F 500V N-Channel MOSFET Mechanical Data TO220F PACKAGE OUTLINE DIMENSION Symbol A A1 A2 A3 B1 B2 B3 C C1 C2 D D1 D2 D3 E Dimension In Millimeters Min Nom Max 9.960 10.160 10.360 7.000 3.080 3.180 3.280 9.260 9.460 9.660 15.670 15.870 16.070 4.500 4.700 4.900 6.480 6.680 6.880 3.200 3.300 3.400 15.600 15.800 16.000 9.550 9.750 9.950 2.54 (TYP) 1.470 0.700 0.800 0.900 0.250 0.350 0.450 E1 2.540 0.700 E2 E3 E4 1.0*450 0.500 2.760 ϴ www.goodark.com 2.340 0.450 2.560 2.740 0.600 2.960 300 Min 0.392 0.276 0.121 0.365 0.617 0.177 0.255 0.126 0.614 0.376 0.028 0.010 0.092 0.018 0.101 Dimension In Inches Nom 0.400 0.000 0.125 0.372 0.625 0.185 0.263 0.130 0.622 0.384 1.00 (TYP) 0.031 0.014 0.100 0.028 1.0*450 0.020 0.109 Max 0.408 0.000 0.129 0.380 0.633 0.193 0.271 0.134 0.630 0.392 0.058 0.035 0.018 0.108 0.024 0.117 300 Page 6 of 7 Rev.1.0 SSF18N50F 500V N-Channel MOSFET Ordering and Marking Information Device Marking: SSF18N50F Package (Available) TO220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Packag e Type Units/Tu be TO-220F 50 Tubes/Inner Box 20 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) www.goodark.com Units/Inner Inner Box Boxes/Carton Box 1000 6 Duration Sample Size Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices Page 7 of 7 Units/Carton Box 6000 Rev.1.0