SSF20N60H 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A TO247 High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product Schematic Diagram Assignment Features and Benefits Marking and Pin Description The SSF20N60H series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS (ON), energy saving, high reliability and uniformity, superior power density and space saving. Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 13 IDM Pulsed Drain Current② 80 Power Dissipation③ 208 W Linear Derating Factor 1.66 W/°C VDS Drain-Source Voltage 600 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=32mH 400 mJ IAS Avalanche Current @ L=32mH 5 A -55 to + 150 °C PD @TC = 25°C TJ TSTG www.goodark.com Operating Junction and Storage Temperature Range Page 1 of 7 A Rev.1.3 SSF20N60H 600V N-Channel MOSFET Thermal Resistance Symbol Characteristics RθJC RθJA Typ. Max. Units Junction-to-case③ — 0.6 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characteristics @TA=25℃ Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg unless otherwise specified Min. Typ. Max. Units V Conditions 600 — — — 0.2 0.3 — 0.55 — 2 — 4 — 2.4 — — — 1 — — 50 — — 100 -100 — — Total gate charge — 90 — Qgs Gate-to-Source charge — 12 — Qgd Gate-to-Drain("Miller") charge — 34 — VGS = 10V td(on) Turn-on delay time — 12 — VGS=10V, VDS=380V, tr Rise time — 6 — td(off) Turn-Off delay time — 65 — tf Fall time — 6 — ID=10A Ciss Input capacitance — 2334 — VGS = 0V Coss Output capacitance — 856 — Crss Reverse transfer capacitance — 3 — Ω V μA nA VGS = 0V, ID = 250μA VGS=10V,ID = 13A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =600V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 20A, nC ns pF VDS=480V, RL=38Ω, RGEN=4.7Ω VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 20 A — — 80 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.2 V IS=20A, VGS=0V trr Reverse Recovery Time — 480 — ns TJ = 25°C, IF =20A, di/dt = Qrr Reverse Recovery Charge — 10 — nC 100A/μs www.goodark.com Page 2 of 7 Rev.1.3 SSF20N60H 600V N-Channel MOSFET Test Circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires. www.goodark.com Page 3 of 7 Rev.1.3 SSF20N60H 600V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 2. Typ. Gate to source cut-off voltage Figure 1: Power dissipation Figure 3. Typ. gate charge www.goodark.com Figure 4: Typ. Capacitances Page 4 of 7 Rev.1.3 SSF20N60H 600V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 5. Drain-source breakdown voltage www.goodark.com Figure 6. Drain-source on-state resistance Page 5 of 7 Rev.1.3 SSF20N60H 600V N-Channel MOSFET Mechanical Data TO247 PACKAGE OUTLINE DIMENSION Dim. A B C D E F G H J K L M N www.goodark.com Millimeter Min. Max. 19.81 20.81 20.8 21.46 15.57 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 ― 4.5 1 1.4 10.8 11 4.7 5.3 0.4 0.8 1.5 2.49 Inches Min. Max. 0.78 0.819 0.819 0.845 0.61 0.64 0.14 0.144 0.17 0.216 0.212 0.244 0.065 0.084 ― 0.177 0.04 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Page 6 of 7 Rev.1.3 SSF20N60H 600V N-Channel MOSFET Ordering and Marking Information Device Marking: SSF20N60H Package (Available) TO247 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube TO247 Tubes/Inner Box 30 8 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) www.goodark.com Units/Inner Inner Box Boxes/Carton Box 240 5 Duration Sample Size Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ or 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices Page 7 of 7 Units/Carton Box 1200 Rev.1.3