SSF1006A
100V N-Channel MOSFET
FEATURES
ID =200A
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
BV=100V
RDS(ON)=4.7mΩ（Typ.）
DESCRIPTION
The SSF1006A is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1006A is
assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF1006A Top View (D2PAK)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25ْ C
Continuous drain current,VGS@10V
200
ID@Tc=100ْC
Continuous drain current,VGS@10V
130
IDM
Pulsed drain current ①
800
Power dissipation
272
W
Linear derating factor
1.5
W/ْ C
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
960
mJ
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
31
v/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
–55 to +150
ْC
PD@TC=25ْC
Units
A
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.46
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Min.
Typ.
BVDSS Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
4.7
5.5
mΩ
VGS=10V,ID=30A
VGS(th) Gate threshold voltage
2.0
—
4.0
V
VDS=VGS,ID=250μA
—
—
2
μA
VDS=100V,VGS=0V
Parameter
IDSS
Drain-to-Source leakage current
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Page 1 of 6
Max. Units
Test Conditions
Rev.1.0
SSF1006A
100V N-Channel MOSFET
VDS=100V,
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
108
Qgs
Gate-to-Source charge
—
24
—
Qgd
Gate-to-Drain("Miller") charge
—
37
—
td(on)
Turn-on delay time
—
18.2
VDD=30V
Rise time
—
15.6
ID=2A ,RL=15Ω
Turn-Off delay time
—
70.5
Fall time
—
13.8
VGS=10V
Ciss
Input capacitance
—
3150
VGS=0V
Coss
Output capacitance
—
350
Crss
Reverse transfer capacitance
—
240
IGSS
tr
td(off)
tf
VGS=0V,TJ=150ْC
nA
nC
nS
pF
VGS=20V
VGS=-20V
ID=30A,VGS=10V
VDD=30V
RG=2.5Ω
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous
Source
Current
(Body Diode)
Pulsed
Source
Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
Forward Turn-on Time
Min.
Typ.
Max.
—
—
160
Units
Test Conditions
MOSFET symbol
A
showing the
integral reverse
—
—
520
—
—
1.3
V
—
57
—
nS
TJ=25ْC,IF=75A
μC
di/dt=100A/μs ③
—
107
—
p-n junction diode.
TJ=25ْC,IS=60A,VGS=0V ③
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 50V,Id=80A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
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Page 2 of 6
Rev.1.0
SSF1006A
100V N-Channel MOSFET
EAS Test Circuit
Gate Charge Test Circuit
Switch Time Test Circuit
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Switch Waveform
Page 3 of 6
Rev.1.0
SSF1006A
100V N-Channel MOSFET
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
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Breakdown Voltage vs. Junction Temperature
Page 4 of 6
Rev.1.0
SSF1006A
100V N-Channel MOSFET
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction
Transient Thermal Impedance Curve
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Page 5 of 6
Rev.1.0
SSF1006A
100V N-Channel MOSFET
D2PAK MECHANICAL DATA
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Page 6 of 6
Rev.1.0