SSF1116A
Feathers:
ID =75A
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
BV=110V
Rdson=12mΩ (Typ.)
Description:
The SSF1116A is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1116A is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
SSF1116A TOP View (D2PAK)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
75
ID@Tc=100ْC
Continuous drain current,VGS@10V
61
IDM
Pulsed drain current ①
300
Power dissipation
272
W
Linear derating factor
1.5
W/ ْC
Gate-to-Source voltage
±20
V
300
mJ
PD@TC=25ْC
VGS
EAS
Single pulse avalanche energy
②
Units
A
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
31
v/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
ْC
–55 to +175
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.55
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
110
120
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
12
16
mΩ
VGS=10V,ID=30A
VGS(th)
2.0
—
4.0
V
VDS=VGS,ID=250μA
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Gate threshold voltage
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2010.12.1
Max. Units
Test Conditions
VDS=110V,VGS=0V
μA
VDS=110V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Version: 1.1
page
1of5
SSF1116A
Qg
Total gate charge
—
110
Qgs
Gate-to-Source charge
—
22
—
Qgd
Gate-to-Drain("Miller") charge
—
39
—
td(on)
Turn-on delay time
—
20
tr
Rise time
—
16
td(off)
Turn-Off delay time
—
69
nC
ID=30A,VGS=10V
VDD=30V
VDD=30V
nS
ID=2A ,RL=15Ω
RG=2.5Ω
tf
Fall time
—
19
VGS=10V
Ciss
Input capacitance
—
3150
VGS=0V
Coss
Output capacitance
—
350
Crss
Reverse transfer capacitance
—
240
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
Min.
Typ.
Max.
—
—
75
Units
MOSFET symbol
A
—
—
300
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=60A,VGS=0V ③
trr
Reverse Recovery Time
－
54
—
nS
TJ=25ْC,IF=75A
Qrr
Reverse Recovery Charge
－
131
—
μC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 50V,Id=45A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω
Starting TJ = 25°C
EAS Test Circuit:
©Silikron Semiconductor Corporation
Gate Charge Test Circuit:
2010.12.1
Version: 1.1
page
2of5
SSF1116A
Switch Time Test Circuit:
Switch Waveform:
Capacitance
Transfer Characteristic
On Resistance vs. Junction Temperature
©Silikron Semiconductor Corporation
Breakdown Voltage vs. Junction Temperature
2010.12.1
Version: 1.1
page
3of5
SSF1116A
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
©Silikron Semiconductor Corporation
Max Drain Current vs. Junction
Transient Thermal Impedance Curve
2010.12.1
Version: 1.1
page
4of5
SSF1116A
D2PAK MECHANICAL DATA:
©Silikron Semiconductor Corporation
2010.12.1
Version: 1.1
page
5of5