2N7002KG8 60V MOSFET Main Product Characteristics VDSS 60V RDS(on) 7.5ohm(max.) ID A SOT-363 Schematic Diagram Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 0.115 A IDM 0.8 A PD 0.38 W TJ,TSTG -55 To 150 ℃ RθJA 328 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 5 Rev.1.1 2N7002KG8 60V MOSFET Electrical Characteristics @TA=25℃ Symbol unless otherwise specified Parameter Conditions Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±1 uA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 V Drain-Source On-State Resistance RDS(ON) Forward Transconductance gFS Input Capacitance Clss Typ Max V 1 VGS=10V, ID=0.5A 7.5 VGS=5V, ID=0.05A 7.5 VDS=10V,ID=0.2A Units Ω 0.08 VDS=15V,VGS=0V, S 30 PF 6 PF 3 PF Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) VDD=30V, ID=0.2A, 20 nS Turn-Off Delay Time td(off) VGS=10V,RGEN=10Ω 40 nS F=1.0MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Min. Typ. Max. Units — — 0.115 A — — 0.8 A — — 1.3 V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Conditions MOSFET symbol D showing the integral reverse G p-n junction diode. IS=0.2A, VGS=0V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 5 Rev.1.1 S 2N7002KG8 60V MOSFET Typical Electrical and Thermal Characteristics Figure 1: Switching Test Circuit Figure 2: Switching Waveforms Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.goodark.com Page 3 of 5 Rev.1.1 2N7002KG8 60V MOSFET Mechanical Data NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter; converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 5 Rev.1.1 2N7002KG8 60V MOSFET Ordering and Marking Information Device Marking: 702 Package (Available) SOT-363 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape SOT-363 3000 Tapes/Inner Box 10 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Units/Inner Inner Box Boxes/Carton Box 30000 4 Duration Sample Size Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ or 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices www.goodark.com Page 5 of 5 Units/Carton Box 120000 Rev.1.1