SSF6007

SSF6007
50V P-Channel MOSFET
Main Product Characteristics
VDSS
-50V
RDS(on)
2.1ohm(typ.)
ID
-130mA
6007
SOT-23
Features and Benefits


Schematic Diagram
Marking and Pin
Assignment
Advanced trench MOSFET process technology
Special designed for Line current interrupter in
telephone sets, Relay, high speed and line
transformer drivers and general purpose
applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product




Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance. These features combine to make this design an extremely efficient and reliable device for use in
line current interrupter in telephone sets and a wide variety of other applications
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V①
-130
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V①
-100
IDM
Pulsed Drain Current②
-520
PD @TC = 25°C
Power Dissipation③
230
mW
VDS
Drain-Source Voltage
-50
V
VGS
Gate-to-Source Voltage
± 20
V
ESD
ESD Rating (HBM module)
1
KV
TJ
Operating Junction and Storage Temperature Range
-55 to + 150
°C
TSTG
Units
mA
Thermal Resistance
Symbol
RθJA
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Characteristics
Typ.
Max.
Units
Junction-to-ambient (t ≤ 10s) ④
—
556
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
540
℃/W
Page 1 of 5
Rev.1.0
SSF6007
50V P-Channel MOSFET
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
unless otherwise specified
Min.
Typ.
Drain-to-Source breakdown voltage
-50
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Max.
Units
—
—
V
VGS = 0V, ID = -10μA
—
2.1
7
Ω
VGS=-10V,ID = -130mA
-0.8
—
-2
V
VDS = VGS, ID = -1mA
—
—
-0.1
Drain-to-Source leakage current
-1
—
—
-50
—
—
10
-10
—
—
Conditions
VDS =-40V,VGS = 0V
μA
VDS =-50V,VGS = 0V
TJ = 125°C
uA
VGS =20V
IGSS
Gate-to-Source forward leakage
gfs
Forward Transconductance
50
—
—
Ciss
Input Capacitance
—
45
—
Coss
Output Capacitance
—
18
—
Crss
Reverse Transfer Capacitance
—
11
—
f = 1 MHz
td(on)
Turn–On Delay Time
—
3.1
—
VDD = –15V;
tr
Rise Time
—
1.3
—
td(off)
Turn–Off Delay Time
—
18
—
tf
Fall Time
—
7.5
—
S
VGS = -20V
VDS =-25 V ID =-130m A
VGS = 0;
pF
ns
VDS = -5 V;
ID = –2.5 A;
RL = 50ohm
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min.
Typ.
Max.
Units
—
—
130
mA
—
—
520
mA
—
—
-1.3
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=-130mA, VGS=0V
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 2 of 5
Rev.1.0
SSF6007
50V P-Channel MOSFET
Fig 1: Transfer Characteristics
Fig 2: Out Put Curve
Fig 3: Body Diode Forward Curve
ton
tr
Vdd
td(on)
Rl
Vin
Vgs
Rgen
D
90%
Vout
toff
tf
td(off)
VOUT
90%
INVERTED
10%
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Fig 5: Switching Waveforms
Fig 4: Switching Test Circuit
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Page 3 of 5
Rev.1.0
SSF6007
50V P-Channel MOSFET
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
NOTES
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 5
Rev.1.0
SSF6007
50V P-Channel MOSFET
Ordering and Marking Information
Device Marking: 6007
Package (Available)
SOT-23
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/
Inner Box
SOT23
3000pcs 10pcs
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/
Inner Box
Inner Boxes/
Carton Box
Units/
Carton Box
30000pcs
4pcs
120000pcs
Duration
Sample Size
Tj=125℃ or 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 5 of 5
Rev.1.0