SSF6007 50V P-Channel MOSFET Main Product Characteristics VDSS -50V RDS(on) 2.1ohm(typ.) ID -130mA 6007 SOT-23 Features and Benefits Schematic Diagram Marking and Pin Assignment Advanced trench MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance. These features combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications Absolute Max Rating Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ -10V① -130 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V① -100 IDM Pulsed Drain Current② -520 PD @TC = 25°C Power Dissipation③ 230 mW VDS Drain-Source Voltage -50 V VGS Gate-to-Source Voltage ± 20 V ESD ESD Rating (HBM module) 1 KV TJ Operating Junction and Storage Temperature Range -55 to + 150 °C TSTG Units mA Thermal Resistance Symbol RθJA www.goodark.com Characteristics Typ. Max. Units Junction-to-ambient (t ≤ 10s) ④ — 556 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 540 ℃/W Page 1 of 5 Rev.1.0 SSF6007 50V P-Channel MOSFET Electrical Characteristics @TA=25℃ Symbol Parameter V(BR)DSS unless otherwise specified Min. Typ. Drain-to-Source breakdown voltage -50 RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Max. Units — — V VGS = 0V, ID = -10μA — 2.1 7 Ω VGS=-10V,ID = -130mA -0.8 — -2 V VDS = VGS, ID = -1mA — — -0.1 Drain-to-Source leakage current -1 — — -50 — — 10 -10 — — Conditions VDS =-40V,VGS = 0V μA VDS =-50V,VGS = 0V TJ = 125°C uA VGS =20V IGSS Gate-to-Source forward leakage gfs Forward Transconductance 50 — — Ciss Input Capacitance — 45 — Coss Output Capacitance — 18 — Crss Reverse Transfer Capacitance — 11 — f = 1 MHz td(on) Turn–On Delay Time — 3.1 — VDD = –15V; tr Rise Time — 1.3 — td(off) Turn–Off Delay Time — 18 — tf Fall Time — 7.5 — S VGS = -20V VDS =-25 V ID =-130m A VGS = 0; pF ns VDS = -5 V; ID = –2.5 A; RL = 50ohm Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Min. Typ. Max. Units — — 130 mA — — 520 mA — — -1.3 V Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=-130mA, VGS=0V Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C www.goodark.com Page 2 of 5 Rev.1.0 SSF6007 50V P-Channel MOSFET Fig 1: Transfer Characteristics Fig 2: Out Put Curve Fig 3: Body Diode Forward Curve ton tr Vdd td(on) Rl Vin Vgs Rgen D 90% Vout toff tf td(off) VOUT 90% INVERTED 10% 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Fig 5: Switching Waveforms Fig 4: Switching Test Circuit www.goodark.com Page 3 of 5 Rev.1.0 SSF6007 50V P-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol NOTES A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 5 Rev.1.0 SSF6007 50V P-Channel MOSFET Ordering and Marking Information Device Marking: 6007 Package (Available) SOT-23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box SOT23 3000pcs 10pcs Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box 30000pcs 4pcs 120000pcs Duration Sample Size Tj=125℃ or 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=125℃ or 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices www.goodark.com Page 5 of 5 Rev.1.0