RQK0608BQDQS Silicon N Channel MOS FET Power Switching REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Features • Low on-resistance RDS(on) = 120 mΩ typ.(at VGS = 4.5 V, ID = 1.6 A) • Low drive current • High speed switching • VDSS : 60 V and capable of 2.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 2, 4 D 2 1 3 1. Gate 2. Drain 3. Source 4. Drain 1G 4 S 3 Note: Marking is “BQ“. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 1 of 7 Ratings 60 ±12 3.2 10 3.2 1.5 150 –55 to +150 Unit V V A A A W °C °C RQK0608BQDQS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Min 60 +12 –12 — — — 0.4 — — 5 — — — — — — — Typ — — — — — — — 120 140 7.5 300 36 20 12 64 32 4 Max — — — +10 –10 1 1.4 155 195 — — — — — — — — Unit V V V µA µA µA V mΩ mΩ S pF pF pF ns ns ns ns Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Qg Qgs Qgd VDF — — — — 3 0.6 1 0.8 — — — — nC nC nC V Notes: 3. Pulse test REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 2 of 7 Test conditions ID = 10 mA, VGS = 0 IG = +100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = +10 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1.6 A, VGS = 4.5 V Note3 ID = 1.6 A, VGS = 2.5 V Note3 ID = 1.6 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz ID = 1.6 A VGS = 4.5 V RL = 6.2 Ω Rg = 4.7 Ω VDD = 10 V VGS = 4.5 V ID = 3.2 A IF = 3.2 A, VGS = 0 Note3 RQK0608BQDQS Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 100 2 Drain Current ID (A) Channel Dissipation Pch (W) Operation in this area is limited by RDS(on) 1.5 1 0.5 10 µs 10 100 µs 1 1 ms 10 ms 100 ms 0.1 DC Operation 0.01 Ta = 25°C 1 Shot Pulse 0 0 25 50 75 100 125 0.001 0.01 150 10 1 0.1 100 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4 40 x 40 x 1 mm) 10 4 V 2.4 V 10 2.6 V Drain Current ID (A) Typical Transfer Characteristics (1) Typical Output Characteristics 8 –25°C 2.2 V Pulse Test Tc = 25°C 2.8 V Drain Current ID (A) 8V, 10 V 2.0 V 6 1.8 V 4 1.6 V 2 0 1.4 V 4 2 6 8 Tc = 75°C 6 4 2 VDS = 10 V Pulse Test VGS = 0V 0 25°C 8 0 10 Drain to Source Voltage VDS (V) 0 1 2 3 4 Gate to Source Voltage VGS (V) 1 Drain Current ID (A) VDS = 10 V Pulse Test 0.1 0.01 Tc = 75°C 25°C 0.001 –25°C 0.0001 0.00001 0 0.5 1 1.5 Gate to Source Voltage VGS (V) REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 3 of 7 2 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 2.0 VDS = 10 V Pulse Test 1.5 ID = 10 mA 1.0 0.5 1 mA 0.1 mA 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQK0608BQDQS Pulse Test Tc = 25°C 600 400 ID = 3.2 A 2.4 A 1.6 A 200 1.0 A 0.5 A 0 0 2 4 6 8 Drain to Source on State Resistance RDS(on) (mΩ) 800 Static Drain to Source on State Resistance vs. Drain Current 10 1000 VGS = 2.5 V 100 10 V 4.5 V Pulse Test Tc = 25°C 10 0.1 1 10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (1) Static Drain to Source on State Resistance vs. Case Temperature (2) Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) 300 Pulse Test VGS = 4.5 V 250 ID = 3.2 A 2.4 A 200 1.6 A 1.0 A 150 0.5A 100 50 –25 0 25 50 75 100 125 150 Pulse Test VGS = 2.5 V ID = 3.2 A 2.4 A 250 1.6 A 200 1.0 A 0.5A 150 100 50 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 100 Pulse Test VDS = 10 V –25°C 10 25°C 1 0.1 0.01 300 Case Temperature Tc (°C) Tc = 75°C 0.1 1 Drain Current ID (A) REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 4 of 7 10 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10000 1000 Pulse Test VGS = 0 V VDS = 60 V 100 10 1 0.1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQK0608BQDQS Switching Characteristics 16 VDD = 10 V 25 V 50 V 60 12 VDD = 50 V 25 V 10 V 40 8 20 4 ID = 2.4 A Tc = 25°C 0 0 2 4 6 0 10 8 10000 Switching Time t (ns) 80 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 td(off) td(on) 10 tf 0.1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 600 550 Ciss (pF) Ciss 100 Coss 500 450 400 VDS = 0 f = 1MHz Crss 10 0 10 20 30 40 50 4 6 8 10 Body-Drain Diode Forward Voltage vs. Case Temperature 2.5 V 4.5 V 10 V 0V 2 VGS = –2.5, –4.5, –10 V 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 5 of 7 Body-Drain Diode Forward Voltage VSDF (V) Reverse Drain Current vs. Source to Drain Voltage 8 0 2 Gate to Source Voltage VGS (V) Tc = 25°C 4 0 Drain to Source Voltage VDS (V) Pulse Test 6 350 –10 –8 –6 –4 –2 60 10 Reverse Drain Current IDR (A) 10 1 Gate Charge Qg (nC) VGS = 0 V f = 1 MHz 0 tr 1000 1 0.01 1000 Ciss, Coss, Crss (pF) VGS = 4.5 V, VDD = 10 V Rg = 4.7 Ω, duty ≤ 1 % Tc = 25°C 0.6 VGS = 0 0.5 ID = 10 mA 0.4 1 mA 0.3 0.2 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQK0608BQDQS Switching Time Test Circuit 90% Vout Monitor Vin Monitor Rg Switching Time Waveform D.U.T. RL Vin Vout Vin 4.5 V VDD = 10 V 10% 10% 90% td(on) REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 6 of 7 10% tr 90% td(off) tf RQK0608BQDQS Package Dimensions Previous Code UPAK / UPAKV 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max MASS[Typ.] 0.050g Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Part No. RQK0608BQDQSTL-E Quantity 1000 pcs. REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 7 of 7 Shipping Container φ178 mm reel, 12 mm Emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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