AOS Semiconductor Product Reliability Report AOK20B120D1, rev a Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOK20B120D1. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOK20B120D1 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. I. Reliability Stress Test Summary and Results Test Item HTGB HTRB HAST H3TRB Autoclave Total Sample Size Number of Failures Reference Standard 693 pcs 0 JESD22-A108 693 pcs 0 JESD22-A108 96 hours 924 pcs 0 JESD22-A110 1000 hours 924 pcs 0 JESD22-A101 96 hours 924 pcs 0 JESD22-A102 Test Condition Time Point Temp = 175°C , Vge=100% of Vgemax Temp = 175°C , Vce=80% of Vcemax 130°C , 85%RH, 33.3 psia, Vce = 80% of Vcemax up to 42V 85°C , 85%RH, Vce = 80% of Vcemax up to 100V 121°C , 29.7psia, RH=100% -65°C to 150°C , air to air, Temp = 175°C Tj = 100°C 5min on / 5min off 168 / 500 / 1000 hours 168 / 500 / 1000 hours Temperature 1000 cycles 924 pcs 0 JESD22-A104 Cycle 1000 hours 924 pcs 0 JESD22-A103 HTSL Power 6000 cycles 924 pcs 0 AEC Q101 Cycling Resistance to Temp = 270°C 15 seconds 30 pcs 0 JESD22-B106 Solder Heat Note: The reliability data presents total of available generic data up to the published date. II. Reliability Evaluation FIT rate (per billion): 1.05 MTTF = 109175 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.05 9 MTTF = 10 / FIT = 109175 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 125 deg C Af 758 256 95 38 9.7 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 150 deg C 175 deg C 2.9 1 2