AOS Semiconductor Product Reliability Report AOT2142L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOT2142L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOT2142L passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. I. Reliability Stress Test Summary and Results Test Item HTGB HTRB HAST H3TRB Autoclave Temperature Cycle HTSL Power Cycling Total Sample Size Number of Failures Reference Standard 924 pcs 0 JESD22-A108 924 pcs 0 JESD22-A108 96 hours 924 pcs 0 JESD22-A110 1000 hours 924 pcs 0 JESD22-A101 96 hours 924 pcs 0 JESD22-A102 1000 cycles 924 pcs 0 JESD22-A104 1000 hours 924 pcs 0 JESD22-A103 8572 cycles 924 pcs 0 AEC Q101 Test Condition Time Point Temp = 150°C , Vgs=100% of Vgsmax Temp = 150°C , Vds=80% of Vdsmax 130°C , 85%RH, 33.3 psia, Vds = 80% of Vdsmax up to 42V 85°C , 85%RH, Vds = 80% of Vdsmax up to 100V 121°C , 29.7psia, RH=100% -65°C to 150°C , air to air, Temp = 150°C Tj = 100°C 3.5min on/3.5min off 168 / 500 / 1000 hours 168 / 500 / 1000 hours Resistance to Temp = 270°C 15 seconds 30 pcs 0 JESD22-B106 Solder Heat Note: The reliability data presents total of available generic data up to the published date. II. Reliability Evaluation FIT rate (per billion): 1.91 MTTF = 59839 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.91 9 MTTF = 10 / FIT = 59839 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 2