AOS Semiconductor Product Reliability Report AOZ8212CI-05, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOZ8212CI-05. Review of the electrical test results confirms that AOZ8212CI-05 passes AOS quality and reliability requirements. Table of Contents: I. II. III. IV. Product Description Package and Die information Qualification Test Result Reliability Evaluation I. Product Description: The AOZ8212CI-05 is a two-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. -ROHS compliant -Halogen free Detailed information refers to the datasheet on website. . II. Package and Die Information: Product ID Package Type Lead Frame Die attach material Bonding MSL level AOZ8212CI-05 SOT23A Cu, Epoxy Au wire Up to Level 1 2 III. Qualification Tests Result: Test Item Test Condition Test duration Sample Size PreConditioning 168hrs @85 °C /85%RH+3 cyc reflow@260°C - Pass 6 lots (Sum of TC,PCT and HAST) JESD22-A113 HTRB Vdd= 80% Vbr max. Temp = 150°C 168hrs 500hrs 1000hrs 3 lots 6 lots Pass JESD22-A108 Result Standard (77 /lot) Temperature Cycle '-65 °C to +150 °C, air to air 500cycles 6 lots (77 /lot) Pass JESD22-A110 Pressure Pot 121°C, 29.7psi, RH= 100% 96hrs 6 lots (77 /lot) Pass JESD22-A102 HAST '130 +/- 2°C, 85%RH, 33.3 psi, at VCC min power dissipation. 100hrs 6 lots (55 /lot) Pass JESD22-A104 IV. Reliability Evaluation FIT rate (per billion): 13 MTTF = 8685 years The presentation of FIT rate for the individual product reliability is restricted by the actual HTRB sample size of the selected product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2x (3x77x168+6x77x500) x258] = 13 MTTF = 109 / FIT = 7.61 x107hrs= 8685 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB tests H = Duration of HTRB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 70 85 100 115 130 150 deg C deg C deg C deg C deg C deg C deg C Af 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3