AOS Semiconductor Product Reliability Report AO4609/AO4609L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Nov 30, 2005 1 This AOS product reliability report summarizes the qualification result for AO4609. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4609passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4609 is Pb-free (meets ROHS & Sony 259 specifications). AO4609L is a Green Product ordering option. AO4609 and AO4609L are electrically identical. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Units Max p-channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±12 V ID 8.5 -3 6.6 -2.4 40 -6 2 2 1.28 1.28 -55 to 150 -55 to 150 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation IDM TA=25°C TA=70°C Junction and Storage Temperature Range PD TJ, TSTG A W °C Thermal Characteristics : n-channel, Schottky and p-channel Parameter Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Symbol t ≤ 10s SteadyState SteadyState t ≤ 10s SteadyState SteadyState RθJA RθJL RθJA RθJL Device Typ Max n-ch 48 62.5 n-ch 74 110 n-ch 35 40 p-ch 56 62.5 p-ch 81 110 p-ch 40 48 Units °C/W 2 II. Die / Package Information: AO4609 AO4609L (Green Compound) Standard sub-micron Standard sub-micron low voltage N/P channel process low voltage N/P channel process Package Type 8 lead SOIC 8 lead SOIC Lead Frame Copper with Solder Plate Copper with Solder Plate Die Attach Silver epoxy Silver epoxy Bond wire 2 mils Au wire 2 mils Au wire Mold Material Epoxy resin with silica filler Epoxy resin with silica filler 100/0 Filler % (Spherical/Flake) 90/10 Flammability Rating UL-94 V-0 UL-94 V-0 Backside Metallization Ti / Ni / Ag Ti / Ni / Ag Moisture Level Up to Level 1 * Up to Level 1* Process Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AO4609 (Standard) & AO4609L (Green) Test Item Test Condition Time Point Solder Reflow Precondition Standard: 1hr PCT+3 cycle reflow@260°c Green: 168hr 85°c /85%RH+3 cycle reflow@260°c Temp = 150°c, Vgs=100% of Vgsmax 0hr HTGB 168 / 500 hrs Lot Attribution Total Sample size Number of Failures Standard: 48 lots Green: 16 lots 9405 pcs 0 2 lots 164 pcs 0 (Note A*) 77+5 pcs / lot 1000 hrs HTRB Temp = 150°c, Vds=80% of Vdsmax 168 / 500 hrs 2 lots (Note A*) 164 pcs 0 77+5 pcs / lot 1000 hrs HAST Pressure Pot 130 +/- 2°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs 121°c, 15+/-1 PSIG, RH=100% 96 hrs Standard: 30 lots Green: 14 lots 2420 pcs 0 50+5 pcs / lot (Note B**) Standard: 48 lots Green: 16 lots 3520 pcs 0 50+5 pcs / lot Temperature Cycle -65 to 150°c, air to air, 0.5hr per cycle 250 / 500 cycles (Note B**) Standard: 48 lots Green: 15 lots 3465 pcs 0 50+5 pcs / lot (Note B**) DPA Internal Vision Cross-section X-ray NA 5 5 5 5 5 5 0 3 CSAM NA 5 5 0 Bond Integrity Room Temp 150°c bake 150°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 230°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AO4609and AO4609L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AO4609and AO4609L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 64 MTTF = 1784years 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4609). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (2×164) (168) (258)] = 64 MTTF = 109 / FIT = 1.56 x 107hrs = 1784years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 4 V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D 5