Reliability Report

AOS Semiconductor
Product Reliability Report
AOP609/AOP609L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
May 29, 2006
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This AOS product reliability report summarizes the qualification result for AOP609. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOP609 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
applications. Standard Product AOP609 is Pbfree (meets ROHS & Sony 259 specifications).
AOP609L is a Green Product ordering option. AOP609 and AOP609L are electrically identical.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel Max p-channel
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage
Temperature Range
60
±20
-60
V
±20
V
4.7
-3.5
ID
3.8
-2.9
IDM
20
-20
2.5
2.5
1.6
1.6
-55 to 150
-55 to 150
TA=25°C
TA=100°C
TA=25°C
TA=100°C
Units
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Maximum Junctionto-Ambient
t ≤ 10s
n-ch
RθJA
Maximum JunctionSteadyto-Ambient
State
n-ch
Maximum JunctionSteadyRθJL
to-Lead
State
n-ch
Maximum JunctionRθJA
to-Ambient
t ≤ 10s
p-ch
Maximum JunctionSteadyto-Ambient
State
p-ch
Maximum JunctionSteadyRθJL
to-Lead
State
p-ch
A
W
°C
Typ
Max
Units
37
50
°C/W
74
90
°C/W
28
40
°C/W
35
50
°C/W
73
90
°C/W
32
40
°C/W
2
II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond wire
Mold Material
Filler % (Spherical/Flake)
Flammability Rating
Backside Metallization
Moisture Level
AOP609
Standard sub-micron
low voltage N/P channel
DIP-8
Cu, Ag spot
Ag Epoxy
Au, 2 mils
Epoxy resin with silica filler
90/10
UL-94 V-0
Ti / Ni / Ag
Up to Level 1 *
AOP609L (Green Compound)
Standard sub-micron
low voltage N/P channel
DIP-8
Cu, Ag spot
Ag Epoxy
Au, 2 mils
Epoxy resin with silica filler
100/0
UL-94 V-0
Ti / Ni / Ag
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AOP609 (Standard) & AOP609L (Green)
Test Item
Test Condition
Time
Point
Lot Attribution
Total
Sample
size
Solder
Reflow
Precondition
Standard: 1hr PCT+3
cycle reflow@250°c
Green: 168hr 85°c /85RH
+3 cycle reflow@250°c
Temp = 150°c ,
Vgs=100% of Vgsmax
0hr
Standard: 14 lots
Green: 4 lots
2860 pcs
168 / 500
hrs
3 lots
246 pcs
1000 hrs
(Note A*)
168 / 500
hrs
3 lots
1000 hrs
(Note A*)
100 hrs
Standard: 14 lots
Green: 4 lots
HTGB
HTRB
HAST
Pressure Pot
Temperature
Cycle
Temp = 150°c ,
Vds=80% of Vdsmax
130 +/- 2°c , 85%RH,
33.3 psi, Vgs = 80% of
Vgs max
121°c , 15+/-1 PSIG,
RH=100%
-65°c to 150°c ,
air to air,
96 hrs
250 / 500
cycles
(Note B**)
Standard: 14 lots
Green: 3 lots
(Note B**)
Standard: 14 lots
Green: 3 lots
(Note B**)
Number
of
Failures
0
0
77+5 pcs /
lot
246 pcs
0
77+5 pcs /
lot
990pcs
0
50+5 pcs /
lot
935 pcs
0
50+5 pcs /
lot
935 pcs
0
50+5 pcs /
lot
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III. Result of Reliability Stress for AOP609 (Standard) & AOP609L (Green)
Continues
DPA
Internal Vision
Cross-section
X-ray
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond Integrity
Room Temp
150°C bake
150°C bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
230°c
5 sec
15
15 leads
0
Die shear
150°c
0hr
10
10
0
Note A: The HTGB and HTRB reliability data presents total of available AOP609 and AOP609L
burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AOP609 and
AOP609L comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 43
MTTF = 2654 years
In general,500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of
lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation
energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability
group also routinely monitors the product reliability up to 1000 hr at and performs the necessary
failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the
individual product reliability is restricted by the actual burn-in sample size of the selected product
(AOP609). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (3×164) (168) (258)] = 43
MTTF = 109 / FIT = 2.32 x 107hrs = 2654 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
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Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10 -5eV/ K
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V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D
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