Reliability Report

AOS Semiconductor
Product Reliability Report
AO4611/AO4611L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
This AOS product reliability report summarizes the qualification result for AO4611.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AO4611
passes AOS quality and reliability requirements. The released product will be categorized by
the process family and be monitored on a quarterly basis for continuously improving the
product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,
and for a host of other applications. Standard Product AO4611 is Pb-free (meets ROHS &
Sony 259 specifications).
II. Die / Package Information:
AO4611
AO4611L (Green Compound)
Process
Standard sub-micron
Low voltage N+P channel,
Package Type
8 lead SOIC
Lead Frame
Cu, D/pad, Ag spot
Die Attach
Ag epoxy
Bond wire
Au 2mils
Mold Material
Epoxy resin with silica filler
Flammability Rating
UL-94 V-0
Backside Metallization Ti / Ni / Ag
Moisture Level
Up to Level 1 *
Standard sub-micron
Low voltage N+P channel,
8 lead SOIC
Cu, D/pad, Ag spot
Ag epoxy
Au 2mils
Epoxy resin with silica filler
UL-94 V-0
Ti / Ni / Ag
Up to Level 1*
Note * based on information provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4611 (Standard) & AO4611L (Green)
Test Item
Test Condition
Time Point
Solder
Reflow
Precondition
Standard: 1hr PCT+3
cycle reflow@260°°c
Green: 168hr 85°°c
/85%RH +3 cycle
reflow@260°°c
Temp = 150°°c,
Vgs=100% of Vgsmax
-
HTGB
168 hrs
500 hrs
1000 hrs
Lot Attribution
Standard: 83 lots
Green: 29 lots
Total
Sample size
Number
of
Failures
17380 pcs
0
246 pcs
0
2 lots
1lot
77+5 pcs / lot
(Note A*)
HTRB
Temp = 150°°c,
Vds=80% of Vdsmax
168 hrs
500 hrs
1000 hrs
246 pcs
0
2 lots
1lot
77+5 pcs / lot
HAST
Pressure Pot
130 +/- 2°°c, 85%RH,
33.3 psi, Vgs = 80% of
Vgs max
121°°c, 29.7psi,
RH=100%
100 hrs
(Note A*)
Standard: 81 lots
Green: 16 lots
96 hrs
(Note B**)
Standard: 83 lots
Green: 20 lots
5335 pcs
0
50+5 pcs / lot
5665 pcs
0
50+5 pcs / lot
Temperature
Cycle
-65°°c to 150°°c,
air to air
250 / 500
cycles
(Note B**)
Standard: 87 lots
Green: 29 lots
6380 pcs
50+5 pcs / lot
(Note B**)
0
III. Result of Reliability Stress for AO4611 (Standard) & AO4611L (Green)
Continues
DPA
Internal Vision
Cross-section
X-ray
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond
Integrity
Room Temp
150°°c bake
150°°c bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
245°°C
5 sec
15
15 leads
0
Note A: The HTGB and HTRB reliability data presents total of available AO4611 and
AO4611L burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AO4611 and
AO4611L comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 11
MTTF = 10558 years
The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AO4611). Failure Rate Determination is based
on JEDEC Standard JESD 85. FIT means one failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
9
= 1.83 x 10 / [2 x (4x82x500+2x82x1000) x 258] = 11
9
7
MTTF = 10 / FIT = 9.25 x 10 hrs = 10558 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K