AOS Semiconductor Product Reliability Report AON4803 rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AON4803. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON4803 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AON4803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. -RoHs Compliant -Halogen Free 2 II. Die / Package Information: AON4803 Standard sub-micron Low voltage P channel process DFN 3x2A_8L Cu ,D/pad, Ag spot Ag epoxy Au 2mils Epoxy resin with silica filler UL-94 V-0 Up to Level 1 * Process Package Type Lead Frame Die Attach Bond wire Mold Material Flammability Rating Moisture Level Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AON4803 Test Item Test Condition Time Point Lot Attribution Solder Reflow Precondition 168hr 85°°c /85%RH +3 cycle reflow @260°°c - HTGB Temp = 150°°c , Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs 7 lots 2 lots 1 lot HTRB Temp = 150°°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs HAST 130 +/- 2°°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max Pressure Pot Temperature Cycle Total Sample size Number of Failures 1155 pcs 0 770 pcs 0 (Note A*) 7 lots 2 lots 1 lot 77pcs / lot 770 pcs 0 100 hrs (Note A*) 6 lots 77pcs / lot 330 pcs 0 121°°c , 29.7psi, RH=100% 96 hrs (Note B**) 7 lots 55 pcs / lot 385 pcs 0 -65°°c to 150°°c , air to air 250 / 500 cycles (Note B**) 8 lot 55 pcs / lot 440 pcs 0 (Note B**) 55 pcs / lot 8 lots 3 III. Result of Reliability Stress for AON4803 Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°°c bake 150°°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AON4803 burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AON4803 comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 15743 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AON4803). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x7x77x168+2x2x77x500+2x77x1000) x258] = 7 9 8 MTTF = 10 / FIT = 1.38 x 10 hrs = 15743 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tjs = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tju =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV/K 4