AOS Semiconductor Product Reliability Report AO4612/AO4612L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Jan 3, 2006 1 This AOS product reliability report summarizes the qualification result for AO4612 . Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4612 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AO4612 is Pb-free (meets ROHS & Sony 259 specifications). AO4612L is a Green Product ordering option. AO4612 and AO4612L are electrically identical. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V 4.5 -3.2 ID 3.6 -2.6 IDM 20 -20 2 2 1.28 1.28 -55 to 150 -55 to 150 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-toAmbient Maximum Junction-toAmbient Maximum Junction-to-Lead Maximum Junction-toAmbient Maximum Junction-toAmbient Maximum Junction-to-Lead PD TJ, TSTG Symbol T≤ 10s SteadyState SteadyState RθJA RθJL T≤ 10s SteadyState SteadyState RθJA RθJL A W °C Typ Max Units 48 62.5 °C/W 74 110 °C/W 35 60 °C/W 48 62.5 °C/W 74 110 °C/W 35 40 °C/W 2 II. Die / Package Information: Process AO4612 AO4612 L (Green Compound) Standard sub-micron Standard sub-micron Low voltage complementary process Package Type Lead Frame Die Attach Bond wire Mold Material Filler % (Spherical/Flake) Flammability Rating Backside Metallization Moisture Level 8 lead SOIC Copper with Solder Plate Silver epoxy 2 mils Au wire Epoxy resin with silica filler 90/10 UL-94 V-0 Ti / Ni / Ag Up to Level 1 * 8 lead SOIC Copper with Solder Plate Silver epoxy 2 mils Au wire Epoxy resin with silica filler 100/0 UL-94 V-0 Ti / Ni / Ag Up to Level 1* Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AO4612 (Standard) & AO4612 L (Green) Test Item Test Condition Time Point Solder Reflow Precondition Standard: 1hr PCT+3 cycle reflow@260°c Green: 168hr 85°c /85%RH +3 cycles reflow@260°c Temp = 150°c, 0hr HTGB Vgs=100% of Vgsmax 168 / 500 hrs Lot Attribution Total Sample size Number of Failures Standard: 49 lots Green: 16 lots 9625 pcs 0 4 lots 328 pcs 0 (Note A*) 77+5 pcs / lot 1000 hrs HTRB Temp = 150°c, Vds=80% of Vdsmax 168 / 500 hrs 4 lots (Note A*) 328 pcs 0 77+5 pcs / lot 1000 hrs HAST Pressure Pot 130 +/- 2°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°c, 15+/-1 PSIG, RH=100% 100 hrs Standard: 33 lots 2530 pcs 0 Green: 13 lots 50+5 pcs / lot 96 hrs (Note B**) Standard: 49 lots Green: 16 lots 3575 pcs 0 50+5 pcs / lot Temperature Cycle -65 to 150°c, air to air, 0.5hr per cycle 250 / 500 cycles (Note B**) Standard: 49 lots Green: 15 lots 3520 pcs 0 50+5 pcs / lot (Note B**) 3 DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°C bake 150°C bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 230°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AO4612 and AO4612 L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AO4612 and AO4612 L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 13 MTTF = 8781 years In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4612). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (164) (168) (258) + 2 (3×164) (500) (258)] = 13 9 MTTF = 10 / FIT = 7.69 x 107hrs = 8781 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [ Af ] = Exp [Ea / k ( 1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 4 V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D 5