AOS Semiconductor Product Reliability Report AOD606/AOD606L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com 1Jun, 2007 1 This AOS product reliability report summarizes the qualification result for AOD606. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOD606 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD606 is Pb free (meets ROHS & Sony 259 specifications). Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n channel Max p channel Units Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V 8 -8 ID 8 -8 Pulsed Drain Current IDM 30 -30 Avalanche Current IAR 8 -8 A Repetitive avalanche energy 0.1mH EAR 20 30 mJ 20 50 10 25 2 2.5 1.3 1.6 -55 to 175 -55 to 175 Continuous Drain Current TA=25°C TA=100°C TA=25°C Power Dissipation PD TA=100°C TA=25°C Power Dissipation PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-toAmbient Maximum Junction-toAmbient Maximum Junction-to-Lead Maximum Junction-toAmbient Maximum Junction-toAmbient Maximum Junction-to-Lead TJ, TSTG Symbol T ≤ 10s SteadyState SteadyState T ≤ 10s SteadyState SteadyState Device n-ch RθJA n-ch RθJL RθJA n-ch p-ch p-ch RθJL p-ch A W W °C Typ Max Units 17.4 30 °C/W 50 60 °C/W 4 7.5 °C/W 16.7 25 °C/W 40 50 °C/W 2.5 3 °C/W 2 II. Die / Package Information: AOD606 Standard sub-micron Low voltage N/P process Package Type 5 leads TO252 Lead Frame Copper with Ag spot Die Attach Ag Epoxy Bond wire Au 2mils Mold Material Epoxy resin with silica filler Filler % (Spherical/Flake) 90/10 Flammability Rating UL-94 V-0 Backside Metallization Ti / Ni / Ag Moisture Level Up to Level 1 * Process AOD606L (Green Compound) Standard sub-micron Low voltage N/P process 5 leads TO252 Copper with Ag spot Ag epoxy Au 2mils Epoxy resin with silica filler 100/0 UL-94 V-0 Ti / Ni / Ag Up to Level 1* Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AOD606 (Standard) & AOD606L (Green) Test Item Test Condition Time Point Lot Attribution Total Sample size Solder Reflow Precondition Standard: 1hr PCT+3 cycle reflow@260°c Green: 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax 0hr Standard: 5 lots 825 pcs 0 168 / 500 hrs 3 lots 246 pcs 0 1000 hrs (Note A) 168 / 500 hrs 3 lots 1000 hrs (Note A) 130 +/- 2°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs Standard: 5 lots 275 pcs 0 121°c , 29.7psi, 100%RH 96 hrs (Note B) Standard: 5 lots 50+5 pcs / lot 275pcs 0 (Note B) Standard: 5 lots 50+5 pcs / lot 275pcs 0 (Note B) 50+5 pcs / lot HTGB HTRB HAST Pressure Pot Temperature Cycle Temp = 150°c , Vds=80% of Vdsmax -65°c to 150°c , air to air, 250 / 500 cycles Number of Failures 77+5 pcs / lot 246pcs 0 77+5 pcs / lot 3 III. Result of Reliability Stress for AOD606 (Standard) & AOD606L (Green) Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°c bake 150°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AOD606 and AOD606L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AOD606 and AOD606L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 14.4 MTTF = 7927 years In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOD606). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 Failure Rate = Chi x 10 9 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (3×164) (500) (258)] = 14.4 MTTF = 109 / FIT =6.94 x107hrs =7927years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 4 V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D 5