Power Detection and Control for Handset Power Amplifiers

Workshop
WSF
Power Detection and Control
for Handset Power Amplifiers
David Ripley
Skyworks Solutions Incorporated
5110 North River Blvd
Cedar Rapids, Iowa, 52402
1
Outline
• Bipolar Power Amplifier Biasing
Techniques
• Control Characteristics of Bias
Techniques
• Power Control Methods
• Indirect Power Control Characteristics
• Direct Power Control Characteristics
• Transient Considerations
2
Complex Product Requirements
Switching Spectrum
Power Vs. Time
Noise Spectrum
-75
+20 MHz Amplitude (dBm) (dBm)
-80
-85
-90
-95
-100
-105
-110
0
5
10
15
20
25
30
35
Pout (dBm) (dBm)
Dynamic Range
3
2.5
Total Radiated Power
Load Invariance
30
29
1.5
1
1
28
0.8
0.6
Delivered Pout (dBm)
Delta POUT_MEAS (dBm)
2
0.5
0
-0.5
-1
-1.5
0.4
0.2
27
0
-0.2
-0.4
26
-0.6
-0.8
-1
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
25
24
-2
-2.5
-3
-5
0
5
10
15
20
POUT_MEAS (dBm) (nom)
25
30
Environmental Stability
23
22
0
45
90
135
180
225
270
315
VSWR Angle (deg)
Increasing customer focus on antenna performance continues
to drive complexity and increased margins into requirements
3
360
Bipolar Amplifier Bias Methods
Vc
• Saturated bias methods control
Vb PA
output power by limiting current or
Ib
voltage
Gm
RF
• Linear bias methods maintain a
fixed gain allowing for accurate
control of output power through RF
input drive
Fundamentally – PA is a common emitter gain stage
4
Saturated Amplifier Bias Techniques
Base-current control
Vbias
Amplifier
Ib Base
Bias
Ibias
OR
Ib
Amplifier
Base
Bias
• Amplifier output power is adjusted by
means of limiting DC base current
• Implemented with voltage control through
moderate impedance or high impedance
current source
5
Output Power (dBm)
Dynamic Range and Accuracy
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
High impedance Base bias
Low Drive, Nom
High Drive, Nom
Low Drive, Cold
High Drive, Cold
Low Drive, Hot
High Drive, Hot
0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Vbias (V)
2
Significant Variation with RF drive and Temperature
6
Output Power (dBm)
Dynamic Range and Accuracy
Current Source Base bias
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
Low Drive, Nom
High Drive, Nom
Low Drive, Cold
High Drive, Cold
Low Drive, Hot
High Drive, Hot
0
0.005
0.01
0.015
0.02
0.025
0.03
Base Current (A)
Significant Variation with Temperature
7
Saturated Amplifier Bias Techniques
Collector-Voltage control
Venvelope
Amplifier
Vc Collector
Bias
• Amplifier output power is adjusted by
means of voltage saturation by limiting
DC collector voltage
8
Output Power (dBm)
Dynamic Range and Accuracy
Collector Voltage Control
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
Low Drive, Cold
High Drive, Cold
Low Drive, Nom
High Drive, Nom
Low Drive, Hot
High Drive, Hot
0
0.5
1
1.5
2
2.5
3
3.5
Vcoll (V)
Nearly Constant Control with Temperature and Drive
9
Linear Amplifier Bias Technique
Fixed-Gain Mirror Biasing
Iref
Vb
Amplifier Base Bias
• Amplifier output power is adjusted by
means of RF input power
• Amplifier bias point is held constant
10
Dynamic Range and Accuracy
Fixed Gain Mirror Bias
40
35
Gain
(dB)
Gain (dB)
30
25
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1
Icntrl (mA)
1.2
1.4
1.6
1.8
2
Bias Reference (mA)
Moderate Gain Variation with Temperature
Limited dynamic Range
11
Power Added Efficiency
Efficiency Comparison
15
Base Current Bias
Collector Voltage Bias
20
25
30
35
Output Power (dBm)
Typically 4 – 5% trade-off
12
Bias Noise Consideration
• Base current bias is the most challenging for noise
– PA is not voltage saturated- High small signal gain
– Significant conversion gain of bias noise to the carrier
– Gain of the following stages drives challenging noise level
requirements for bias of driver stages
• Voltage saturation control offers the best noise performance
– PA is constantly in deep voltage saturation
– Noise applied to the final stage is the dominant source
• Noise introduced on driver is AM and is suppressed by
final stage compression
• No gain follows the final stage
Typically 1 – 3 dB trade-off
13
Indirect Vs. Direct Control Methods
• Typical indirect power detection takes advantage of
relationships between DC characteristics and RF output
power
– Simple circuitry, simple process technology
– Limited visibility to antenna loading conditions
– Potentially smaller size
• Direct power detection monitors aspects of the RF waveform
– High frequency circuitry, RF process technology
– Increased complexity of dynamic range/isolation tradeoffs
– Often requires coupler
Indirect – Simple, Low cost, limited performance
Direct – Increased complexity, expense, precision performance 14
Current Sense Indirect Power Control
IDC
Vbat
Vbat
Rc
Vcemin
Vceoffset
Re
Ground
IDC * η => Vrfpk
15
Indirect Power Control Accuracy
Current Sense Control
Measured Power (dBm)
34
29
24
19
14
9
4
-1
-6
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32 34
Desired Output Power (dBm)
Precision over Wide Dynamic Range
16
Voltage Control Indirect power Control
Vreg
Vreg
Rc
Vcemin
Vceoffset
Re
Ground
Vreg - Vcemin => Vrfpk
17
Indirect Power Control Accuracy
Collector Voltage Control
Measured Power (dBm)
34
29
24
19
14
9
4
-1
-6
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32 34
Desired Output power (dBm)
Temperature compensation can improve low power range
18
RF Peak Detector Circuit
Requires High Performance Process to support RF Input
19
3
Peak Detector
Dynamic Range and Accuracy
2.5
2
1.5
Error (dB)
1
0.5
0
-0.5
-1
-1.5
-2
-2.5
-3
-5
0
5
10
15
20
25
30
35
Pout (dBm)
Typically 30 dB dynamic range
20
Log Detector Block Diagram
PTAT
BIAS
Band gap
reference
DET
RFIN
attenuator
DET current
summation
DET
12 dB
DET
12 dB
VDET
1.67
DET
12 dB
DET
12 dB
/buffer
offset
compensation
Current drain is higher due to multiple detection stages
21
Log Detector
Dynamic Range and Accuracy
3
2.5
Delta POUT_MEAS (dBm)
2
1.5
1
0.5
0
-0.5
-1
-1.5
-2
-2.5
-3
-5
0
5
10
15
20
25
30
POUT_MEAS (dBm) (nom)
40 dB dynamic range easily obtained
22
Power Variation into VSWR
30
Indirect Methods
29
Delivered Pout (dBm)
28
8 mm
27
26
25
2.25 dB
24
23
22
0
45
90
135
180
225
270
315
360
8 mm
Pout Delivered (dBm)
VSWR Angle (deg)
26
25.9
25.8
25.7
25.6
25.5
25.4
25.3
25.2
25.1
25
24.9
24.8
24.7
24.6
24.5
24.4
24.3
24.2
24.1
24
Direct Methods
0.5 dB
0.5 dB
0
50
100
150
Coupler + complex termination
0.5 dB
200
250
300
350
Load Tuner S11 (ang)
23
Closed-Loop power control
Direct Detection Requires Feedback
24
Transient Considerations
• Lock time of the control loop is critical
– Bandwidth must be constrained for stability and noise
– For fixed bandwidth ΔTlock is inversely proportionate to
ΔVin
– Current Sense and Peak detect yield ~2 mV at
pedestal
– Log, RMS, Collector yield > 100 mV at pedestal
• Saturation of the control loop must be prevented
– Snap-down characteristic yields significant transient
spectrum which violates system requirements
Both Rising and Falling Edges Must be Considered
25
Transient Waveform Examples
Lock Time Performance
Saturation Performance
40
35
30
25
20
Normal response
15
(d B m )
10
5
Saturated loop
0
-5
Pedestal
-10
-15
-20
-25
-30
-35
-40
10u
s
8us
10u
26
Conclusion
• Several trade-offs must be considered when
selecting the fundamental bias technique
• Indirect power control can be simple and low
cost but lack accuracy
• Direct power control can provide precision
control even in non-ideal load conditions
• Feedback within the power control solution
must be carefully designed with focus on
transient performance characteristics
27
Bio
David S. Ripley received his B.S. degree in electrical
engineering from Iowa State University, Ames, in 1992 and the
M.S. EE degree from National Technical University (NTU),
Minneapolis, MN, in 2002. From 1992 to 1999, he worked in the
Cellular Subscriber Division, Motorola, Libertyville, IL, where he
was involved in the design and development of TDMA and
AMPS handsets including RFIC design of receiver and
synthesizer functions. Since 1999, he has been with Skyworks
Solutions, Inc. (previously Conexant Systems, Inc.), Cedar
Rapids, IA, where he has been involved with the design of
multiband HBT power amplifiers for the GSM and CDMA cellular
handsets. He holds fifteen patents.
28