RF3140 0 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, power control ASICs and other power control circuitry; this allows the module to be driven directly from the DAC output. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands. On-board power control provides over 50dB of control range with an analog voltage input; and, power down with a logic “low” for standby operation. 9.600 TYP 8.800 TYP 8.200 TYP 7.400 TYP 6.800 TYP 6.000 TYP 5.400 TYP 4.600 TYP 4.000 TYP 3.200 TYP 2.600 TYP 1.800 TYP 1.200 TYP 0.400 TYP 0.000 Pin 1 8.747 5.925 4.075 9 Si BJT GaAs HBT Si Bi-CMOS SiGe HBT InGaP/HBT GaN HEMT 8.280 8.205 9.098 TYP 1.797 0.000 1.245 0.306 1.70 1.45 Pin 1 10.00 ± 0.10 10.00 ± 0.10 Optimum Technology Matching® Applied 5.400 TYP 6.000 TYP 6.800 TYP 7.400 TYP 8.200 TYP 8.275 TYP 8.800 TYP 9.600 TYP • GPRS Class 12 Compatible 3.200 TYP 4.000 TYP 4.600 TYP • Commercial and Consumer Systems 2.600 TYP • GSM850/EGSM900/DCS/PCS Products 1.200 TYP 1.800 TYP • 3V Quad-Band GSM Handsets 0.450 ± 0.075 Package Style: Module (10mmx10mm) GaAs MESFET 9Si CMOS Features SiGe Bi-CMOS • Complete Power Control Solution • Single 3.0V to 5.5V Supply Voltage VCC2 • +35dBm GSM Output Power at 3.5V • +33dBm DCS/PCS Output Power at 3.5V 12 DCS/PCS IN 1 11 DCS/PCS OUT • 60% GSM and 55% DCS/PCS ηEFF BAND SELECT 2 • 10mmx10mm Package Size TX ENABLE 3 10 VCC OUT VBATT 4 VREG 5 Ordering Information VRAMP 6 9 GSM850/GSM900 OUT GSM850/GSM900 IN 7 RF3140 VCC2 8 Functional Block Diagram Rev A6 040113 RF3140 RF3140 PCBA Quad-Band GSM850/GSM900/DCS/PCS Power Amp Module Power Amp Module 5-Piece Sample Pack Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-491 RF3140 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VRAMP) Input RF Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature Parameter Rating Unit -0.3 to +6.0 -0.3 to +1.8 +8.5 50 10:1 -20 to +85 -55 to +150 VDC V dBm % °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Condition Overall Power Control VRAMP Power Control “ON” Power Control “OFF” VRAMP Input Capacitance VRAMP Input Current Turn On/Off Time 0.2 15 1.5 0.25 20 10 2 V V pF µA µs Max. POUT, Voltage supplied to the input Min. POUT, Voltage supplied to the input DC to 2MHz VRAMP =VRAMP MAX VRAMP =0.2V to VRAMP MAX 5.5 10 V V µA Specifications Nominal operating limits PIN <-30dBm, TX Enable=Low, Temp=-20°C to +85°C VRAMP =0.2V, TX Enable=High Overall Power Supply Power Supply Voltage 3.5 3.0 Power Supply Current VREG Voltage VREG Current 1 2.7 2.8 7 10 150 2.9 8 mA V mA µA 0.5 3.0 50 0.5 3.0 2 V V µA V V µA TX Enable=High TX Enable=Low Overall Control Signals Band Select “Low” Band Select “High” Band Select “High” Current TX Enable “Low” TX Enable “High” TX Enable “High” Current 2-492 0 1.9 0 1.9 0 2.0 20 0 2.0 1 Rev A6 040113 RF3140 Parameter Specification Min. Typ. Max. Unit Temp=+25 °C, VBATT =3.5V, VRAMP =VRAMP MAX, PIN =3dBm, VREG =2.8V, Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154µs Overall (GSM850 Mode) Operating Frequency Range Maximum Output Power +34.2 824 to 849 +35.0 MHz dBm 32 33 dBm 45 0 55 +3 +5 % dBm Output Noise Power -86 -84 dBm Forward Isolation 1 Forward Isolation 2 Cross Band Isolation at 2f0 Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Stability Output Load VSWR Ruggedness -35 -25 -30 -15 -30 -25 -10 -20 -5 -10 -36 dBm dBm dBm dBm dBm dBm Total Efficiency Input Power Range Condition Ω 50 50 Ω VRAMP =0.2V to VRAMP MAX Spurious<-36dBm, RBW=3MHz Set VRAMP where VRAMP <34.2dBm into 50Ω load Load impedance presented at RF OUT pad 55 dB VRAMP =0.2V to VRAMP MAX 2.5:1 8:1 10:1 Output Load Impedance Temp = 25°C, VBATT =3.5V, VRAMP =VRAMP MAX Temp=+85 °C, VBATT =3.0V, VRAMP =VRAMP MAX At POUT MAX, VBATT =3.5V Maximum output power guaranteed at minimum drive level RBW=100kHz, 869MHz to 894MHz, POUT > +5dBm TXEnable=Low, 0V, PIN =+5dBm TXEnable=High, PIN =+5dBm, VRAMP =0.2V VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX Power Control VRAMP Power Control Range Note: VRAMP MAX =3/8*VBATT +0.18<1.5V Rev A6 040113 2-493 RF3140 Parameter Specification Min. Typ. Max. Unit Temp=+25 °C, VBATT =3.5V, VRAMP =VRAMP MAX, PIN =3dBm, VREG =2.8V, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154µs Overall (GSM900 Mode) Operating Frequency Range Maximum Output Power Total Efficiency Input Power Range +34.2 880 to 915 +35.0 MHz dBm 32 33 dBm 52 0 58 +3 +5 % dBm -86 -82 dBm -88 -84 dBm -35 -25 -24 -15 -30 -25 -10 -20 -5 -10 -36 dBm dBm dBm dBm dBm dBm Output Noise Power Forward Isolation 1 Forward Isolation 2 Cross Band Isolation 2f0 Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Stability Output Load VSWR Ruggedness Condition Ω 50 50 Ω VRAMP =0.2V to VRAMP MAX Spurious<-36dBm, RBW=3MHz Set VRAMP where VRAMP <34.2dBm into 50Ω load Load impedance presented at RF OUT pad 50 dB VRAMP =0.2V to VRAMP MAX 2.5:1 8:1 10:1 Output Load Impedance Temp = 25°C, VBATT =3.5V, VRAMP =VRAMP MAX Temp=+85 °C, VBATT =3.0V, VRAMP =VRAMP MAX At POUT MAX, VBATT =3.5V Maximum output power guaranteed at minimum drive level RBW=100kHz, 925MHz to 935MHz, POUT > +5dBm RBW=100kHz, 935MHz to 960MHz, POUT > +5dBm TXEnable=Low, 0V, PIN =+5dBm TXEnable=High, VRAMP =0.2V, PIN =+5dBm VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX Power Control VRAMP Power Control Range Note: VRAMP MAX =3/8*VBATT +0.18<1.5V 2-494 Rev A6 040113 RF3140 Parameter Specification Min. Typ. Max. Unit Temp=25°C, VBATT =3.5V, VRAMP =VRAMP MAX, PIN =3dBm, VREG =2.8V, Freq=1710MHz to 1785MHz, 25% Duty Cycle, pulse width=1154µs Overall (DCS Mode) Operating Frequency Range Maximum Output Power +32 1710 to 1785 +33 MHz dBm +29.5 +31.0 dBm 48 0 55 +3 +5 % dBm Output Noise Power -85 -80 dBm Forward Isolation 1 Forward Isolation 2 -40 -20 -30 -10 dBm dBm Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Stability Output Load VSWR Ruggedness -15 -30 -7 -15 -36 dBm dBm dBm Total Efficiency Input Power Range Condition 50 - Ω 50 Ω VRAMP =0.2V to VRAMP MAX Spurious<-36dBm, RBW=3MHz Set VRAMP where VRAMP <34.2dBm into 50Ω load Load impedance presented at RF OUT pin 50 dB VRAMP =0.2V to VRAMP MAX, PIN =+5dBm 2.5:1 8:1 10:1 Output Load Impedance Temp=25°C, VBATT =3.5V, VRAMP =VRAMP MAX Temp=+85°C, VBATT =3.0V, VRAMP =VRAMP MAX At POUT MAX, VBATT =3.5V Maximum output power guaranteed at minimum drive level RBW=100kHz, 1805MHz to 1880MHz, POUT > 0dBm, VBATT =3.5V TXEnable=Low, 0V, PIN =+5dBm TXEnable=High, VRAMP =0.2V, PIN =0dBm to +5dBm VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX Power Control VRAMP Power Control Range Note: VRAMP MAX =3/8*VBATT +0.18<1.5V Rev A6 040113 2-495 RF3140 Parameter Specification Min. Typ. Max. Unit Temp=25°C, VBATT =3.5V, VRAMP =VRAMP MAX, PIN =3dBm, VREG =2.8V, Freq=1850MHz to 1910MHz, 25% Duty Cycle, pulse width=1154µs Overall (PCS Mode) Operating Frequency Range Maximum Output Power +32 1850 to 1910 +33 MHz dBm +29.5 +31.0 dBm 45 0 52 +3 +5 % dBm Output Noise Power -85 -80 dBm Forward Isolation 1 Forward Isolation 2 Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Stability -40 -20 -15 -30 -30 -10 -7 -15 -36 dBm dBm dBm dBm dBm 8:1 Output Load VSWR Ruggedness 10:1 Total Efficiency Input Power Range Condition 50 - Output Load Impedance Temp=25°C, VBATT =3.5V, VRAMP =VRAMP MAX, 1850MHz to 1910MHz Temp=+85°C, VBATT =3.0V, VRAMP =VRAMP MAX At POUT MAX, VBATT =3.5V Full output power guaranteed at minimum drive level RBW=100kHz, 1930MHz to 1990MHz, POUT > 0dBm, VBATT =3.5V TX_ENABLE=Low, PIN =+5dBm TXEnable=High, VRAMP =0.2V, PIN =+5dBm VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX VRAMP =0.2V to VRAMP MAX Ω 50 Ω VRAMP =0.2V to VRAMP MAX Spurious<-36dBm, VRAMP =0.2V to VRAMP MAX, RBW=3MHz Set VRAMP where VRAMP <34.2dBm into 50Ω load Load impedance presented at RF OUT pin 50 dB VRAMP =0.2V to VRAMP MAX, PIN =+5dBm 2.5:1 Power Control VRAMP Power Control Range Note: VRAMP MAX =3/8*VBATT +0.18<1.5V 2-496 Rev A6 040113 RF3140 Pin 1 2 Function Description DCS/PCS IN RF input to the DCS/PCS band. This is a 50Ω input. Allows external control to select the GSM or DCS/PCS bands with a BAND logic high or low. A logic low enables the GSM bands, whereas a logic SELECT high enables the DCS/PCS bands. 3 TX ENABLE 4 5 6 VBATT VREG VRAMP 7 GSM850/GS M900 IN VCC2 8 9 10 11 12 Pkg Base GSM850/GS M900 OUT VCC OUT DCS/PCS OUT VCC2 Interface Schematic This signal enables the PA module for operation with a logic high. Once TX Enable is asserted the RF output level will increase to -20dBm. Power supply for the module. This should be connected to the battery. Regulated voltage input for power control function. (2.8V nom) Ramping signal from DAC. A simple RC filter may need to be connected between the DAC output and the VRAMP input depending on the baseband selected. RF input to the GSM bands. This is a 50Ω input. Controlled voltage input to driver stage for GSM bands. This voltage is part of the power control function for the module. This node must be connected to VCC out. RF output for the GSM bands. This is a 50Ω output. The output load line matching is contained internal to the package. Controlled voltage output to feed VCC2. This voltage is part of the power control function for the module. It cannot be connected to anything other than VCC2, nor can any component be placed on this node (i.e., decoupling capacitor). RF output for the DCS/PCS bands. This is a 50Ω output. The output load line matching is contained internal to the package. Controlled voltage input to DCS/PCS driver stage. This voltage is part of the power control function for the module. This node must be connected to VCC out. GND Rev A6 040113 2-497 RF3140 PIN #1 VCC2 Pin Out DCS/PCS OUT DCS/PCS IN BAND SELECT TX EN VBATT VCC OUT 10.0000 VREG VRAMP GSM850/GSM900 OUT VCC2 GSM850/GSM900 IN 10.0000 2-498 Rev A6 040113 RF3140 Theory of Operation Overview The RF3140 is a quad-band GSM850, EGSM900, DCS1800, and PCS1900 power amplifier module that incorporates an indirect closed loop method of power control. This simplifies the phone design by eliminating the need for the complicated control loop design. The indirect closed loop appears as an open loop to the user and can be driven directly from the DAC output in the baseband circuit. Theory of Operation The indirect closed loop is essentially a closed loop method of power control that is invisible to the user. Most power control systems in GSM sense either forward power or collector/drain current. The RF3140 does not use a power detector. A high-speed control loop is incorporated to regulate the collector voltage of the amplifier while the stage are held at a constant bias. The VRAMP signal is multiplied by a factor of 2.65 and the collector voltage for the second and third stages are regulated to the multiplied VRAMP voltage. The basic circuit is shown in the following diagram. VBATT TX ENABLE VRAMP H(s) RF IN RF OUT TX ENABLE By regulating the power, the stages are held in saturation across all power levels. As the required output power is decreased from full power down to 0dBm, the collector voltage is also decreased. This regulation of output power is demonstrated in Equation 1 where the relationship between collector voltage and output power is shown. Although load impedance affects output power, supply fluctuations are the dominate mode of power variations. With the RF3140 regulating collector voltage, the dominant mode of power fluctuations is eliminated. 2 ( 2 ⋅ V CC – V SAT ) P dBm = 10 ⋅ log ------------------------------------------(Eq. 1) –3 8 ⋅ R LOAD ⋅ 10 Rev A6 040113 There are several key factors to consider in the implementation of a transmitter solution for a mobile phone. Some of them are: • Effective efficiency (ηeff) • Current draw and system efficiency • Power variation due to Supply Voltage • Power variation due to frequency • Power variation due to temperature • Input impedance variation • Noise power • Loop stability • Loop bandwidth variations across power levels • Burst timing and transient spectrum trade offs • Harmonics Talk time and power management are key concerns in transmitter design since the power amplifier has the highest current draw in a mobile terminal. Considering only the power amplifier’s efficiency does not provide a true picture for the total system efficiency. It is important to consider effective efficiency which is represented by ηEFF. (ηEFF considers the loss between the PA and antenna and is a more accurate measurement to determine how much current will be drawn in the application). ηEFF is defined by the following relationship (Equation 2): m ∑ PN – PIN =1 ⋅ 100 (Eq. 2) η EFF = n-------------------------------P DC Where Pn is the sum of all positive and negative RF power, PIN the input power and PDC is the delivered DC power. In dB the formula becomes (Equation 3): P PA + P LOSS -----------------------------10 P IN ------10 10 – 10 η EFF = ------------------------------------------------- (Eq. 3) V BAT ⋅ I BAT ⋅ 10 2-499 RF3140 Where PPA is the output power from the PA, PLOSS the insertion loss, PIN the input power to the PA and PDC the delivered DC power. The RF3140 improves the effective efficiency by minimizing the PLOSS term in the equation. A directional coupler may introduce 0.4dB to 0.5dB loss to the transit path. To demonstrate the improvement in effective efficiency consider the following example: Conventional PA Solution at F=1785MHz: PPA = +33.5 dBm PIN = +3 dBm PLOSS = -0.4 dB VBAT = 3.5 V IBAT = 1.16 A ηEFF = 50.3% RF3140 Solution: PPA = +33.5 dBm PIN = +3 dBm PLOSS = 0 dB VBAT = 3.5 V IBAT = 1.16 A hEFF = 55.16% The RF3140 solution improves effective efficiency by 5%. Output power does not vary due to supply voltage under normal operating conditions if VRAMP is sufficiently lower than VBATT. By regulating the collector voltage to the PA the voltage sensitivity is essentially eliminated. This covers most cases where the PA will be operated. However, as the battery discharges and approaches its lower power range the maximum output power from the PA will also drop slightly. In this case it is important to also decrease VRAMP to prevent the power control from inducing switching transients. These transients occur as a result of the control loop slowing down and not regulating power in accordance with VRAMP. The switching transients due to low battery conditions are regulated by incorporating the following relationship limiting the maximum VRAMP voltage (Equation 2). Although no compensation is required for typical battery conditions, the battery compensation required for extreme conditions is covered by the relationship in Equation 4. This should be added to the terminal software. 2-500 3 V RAMP ≤ --- ⋅ V CC + 0.18 (Eq. 4) 8 Due to reactive output matches, there are output power variations across frequency. There are a number of components that can make the effects greater or less. Power variation straight out of the RF3140 is shown in the tables below. The components following the power amplifier often have insertion loss variation with respect to frequency. Usually, there is some length of microstrip that follows the power amplifier. There is also a frequency response found in directional couplers due to variation in the coupling factor over frequency, as well as the sensitivity of the detector diode. Since the RF3140 does not use a directional coupler with a diode detector, these variations do not occur. Input impedance variation is found in most GSM power amplifiers. This is due to a device phenomena where CBE and CCB (CGS and CSG for a FET) vary over the bias voltage. The same principle used to make varactors is present in the power amplifiers. The junction capacitance is a function of the bias across the junction. This produces input impedance variations as the Vapc voltage is swept. Although this could present a problem with frequency pulling the transmit VCO off frequency, most synthesizer designers use very wide loop bandwidths to quickly compensate for frequency variations due to the load variations presented to the VCO. The RF3140 presents a very constant load to the VCO. This is because all stages of the RF3140 are run at constant bias. As a result, there is constant reactance at the base emitter and base collector junction of the input stage to the power amplifier. Noise power in PA's where output power is controlled by changing the bias voltage is often a problem when backing off of output power. The reason is that the gain is changed in all stages and according to the noise formula (Equation 5), F2 – 1 F3 – 1 F TOT = F1 + ---------------- + ------------------- (Eq. 5) G1 G1 ⋅ G2 the noise figure depends on noise factor and gain in all stages. Because the bias point of the RF3140 is kept constant the gain in the first stage is always high and the overall noise power is not increased when decreasing output power. Rev A6 040113 RF3140 Power control loop stability often presents many challenges to transmitter design. Designing a proper power control loop involves trade-offs affecting stability, transient spectrum and burst timing. In conventional architectures the PA gain (dB/ V) varies across different power levels, and as a result the loop bandwidth also varies. With some power amplifiers it is possible for the PA gain (control slope) to change from 100dB/V to as high as 1000dB/V. The challenge in this scenario is keeping the loop bandwidth wide enough to meet the burst mask at low slope regions which often causes instability at high slope regions. The RF3140 loop bandwidth is determined by internal bandwidth and the RF output load and does not change with respect to power levels. This makes it easier to maintain loop stability with a high bandwidth loop since the bias voltage and collector voltage do not vary. An often overlooked problem in PA control loops is that a delay not only decreases loop stability it also affects the burst timing when, for instance the input power from the VCO decreases (or increases) with respect to temperature or supply voltage. The burst timing then appears to shift to the right especially at low power levels. The RF3140 is insensitive to a change in input power and the burst timing is constant and requires no software compensation. Switching transients occur when the up and down ramp of the burst is not smooth enough or suddenly changes shape. If the control slope of a PA has an inflection point within the output power range or if the slope is simply too steep it is difficult to prevent switching transients. Controlling the output power by changing the collector voltage is as earlier described based on the physical relationship between voltage swing and output power. Furthermore all stages are kept constantly biased so inflection points are nonexistent. Rev A6 040113 Harmonics are natural products of high efficiency power amplifier design. An ideal class “E” saturated power amplifier will produce a perfect square wave. Looking at the Fourier transform of a square wave reveals high harmonic content. Although this is common to all power amplifiers, there are other factors that contribute to conducted harmonic content as well. With most power control methods a peak power diode detector is used to rectify and sense forward power. Through the rectification process there is additional squaring of the waveform resulting in higher harmonics. The RF3140 address this by eliminating the need for the detector diode. Therefore the harmonics coming out of the PA should represent the maximum power of the harmonics throughout the transmit chain. This is based upon proper harmonic termination of the transmit port. The receive port termination on the T/R switch as well as the harmonic impedance from the switch itself will have an impact on harmonics. Should a problem arise, these terminations should be explored. The RF3140 incorporates many circuits that had previously been required external to the power amplifier. The shaded area of the diagram below illustrates those components and the following table itemizes a comparison between the RF3140 Bill of Materials and a conventional solution: Component Power Control ASIC Directional Coupler Buffer Attenuator Various Passives Mounting Yield (other than PA) Total Conventional Solution $0.80 $0.20 $0.05 $0.05 $0.05 $0.12 RF3140 $1.27 $0.00 N/A N/A N/A N/A N/A N/A 2-501 RF3140 1 14 2 13 3 12 4 11 5 10 6 9 7 8 From DAC *Shaded area eliminated with Indirect Closed Loop using RF3140 2-502 Rev A6 040113 RF3140 Application Schematic 12 50 Ω µstrip DCS/PCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VREG 50 Ω µstrip 11 DCS/PCS OUT 10 5 15 kΩ** VRAMP 6 50 Ω µstrip GSM850/GSM900 IN 50 Ω µstrip 7 9 GSM850/GSM900 OUT 8 ** Used to filter noise and spurious from base band. Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 1 GND CON1 P2-1 P2 1 VCC CON1 50 Ω µstrip DCS/PCS IN 12 6.8 pF 1 BAND SELECT 3 VBATT 10 4 VRAMP DCS/PCS OUT 2 TX ENABLE VREG 50 Ω µstrip 11 22 µF* 1 nF* 50 Ω µstrip 5 15 kΩ** 6 50 Ω µstrip 7 GSM850/GSM900 IN 9 GSM850/GSM900 OUT 8 *Not required in most applications. ** Used to filter noise and spurious from base band. Note 1: All the PA output measurements are referenced to the PA output pad (Pin 11 and 9). Note 2: The 50 Ω microstrip between the PA output pad and the SMA connector has an approximate insertion loss of 0.1 dB for GSM850/EGSM900 and 0.2 dB for DCS1800/PCS1900 bands. Rev A6 040113 2-503 RF3140 Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.032”, Board Material FR-4, Multi-Layer 2-504 Rev A6 040113 RF3140 PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3µinch to 8µinch gold over 180µinch nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances. PCB Metal Land and Solder Mask Pattern A = 0.80 (mm) Sq. Typ. B = 2.17 x 6.40 (mm) A = 0.80 (mm) Sq. Typ. A 4.20 (mm) Typ. A 2.81 (mm) A 1.40 (mm) A 0.00 A A A 3.30 (mm) 3.21 (mm) 2.41 (mm) 1.78 (mm) 0.98 (mm) 0.89 (mm) Typ. A A A A A A A A A A A 4.20 (mm) Typ. A A A A A 2.81 (mm) Typ. A A A A A 1.40 (mm) Typ. A A A A A 0.00 A A A A A A A 8.39 (mm) Typ. 5.60 (mm) A 7.00 (mm) Typ. A A A 7.00 (mm) Typ. A 5.60 (mm) Typ. 8.39 (mm) Typ. A 7.51 (mm) Typ. Pin 1 5.60 (mm) Typ. 7.00 (mm) 1.40 (mm) Typ. 7.49 (mm) Typ. 6.60 (mm) 6.00 (mm) 5.20 (mm) 5.11 (mm) 2.79 (mm) Typ. 3.48 (mm) 4.19 (mm) Typ. 8.39 (mm) Typ. A 1.40 (mm) Typ. A 2.30 (mm) Typ. A Metal Land Pattern 0.00 Pin 1 0.00 8.39 (mm) Typ. A A B 4.20 (mm) Solder Mask Pattern Figure 1. PCB Metal Land and Solder Mask Pattern (Top View) Rev A6 040113 2-505 RF3140 Thermal Pad and Via Design The PCB land pattern has been designed with a thermal pad that matches the exposed die paddle size on the bottom of the device. Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern shown has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. . 1.40 (mm) Grid Figure 2. Thermal Pad and Via Design (RFMD qualification) 2-506 Rev A6 040113