AOSMD AO6408_10

AO6408
20V N-Channel MOSFET
General Description
Features
The AO6408 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It offers
operation over a wide gate drive range from 1.8V to
12V. It is ESD protected. This device is suitable for use
as a load switch.
VDS (V) = 20V
ID = 8.8A
(VGS = 10V)
RDS(ON) < 18mΩ (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 4.5V)
RDS(ON) < 25mΩ (VGS = 2.5V)
RDS(ON) < 32mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
ESD Protected
100% UIS Tested
100% Rg Tested
D
TSOP-6
Top View
D
D
G
1 6
2 5
3 4
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current A
VGS
TA=25°C
TA=70°C
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
Rev4: September 2010
±12
V
ID
7
IDM
40
W
1.28
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
A
2
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
8.8
Pulsed Drain Current B
Power Dissipation
Maximum
20
RθJA
RθJL
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Typ
47.5
74
37
°C
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
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AO6408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
10
IGSS
Gate-Source leakage current
VDS=0V, VGS=±10V
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
TJ=55°C
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
On state drain current
VGS=4.5V, VDS=5V
40
VGS=10V, ID=8.8A
VGS=4.5V, ID=8A
16
20
mΩ
VGS=2.5V, ID=6A
20.5
25
mΩ
VGS=1.8V, ID=4A
25.6
32
mΩ
VDS=5V, ID=8.8A
Diode Forward Voltage
IS=1A
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
S
1
V
3
A
2200
pF
232
pF
200
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=8.8A
VGS=10V, VDS=10V, RL=1.1Ω,
RGEN=3Ω
pF
1.6
2.2
Ω
17.9
22
nC
1.5
nC
4.7
nC
3.3
ns
5.9
ns
44
ns
7.7
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=8.8A, dI/dt=100A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=100A/µs
9.8
Body Diode Reverse Recovery Time
mΩ
33
0.72
1810
VGS=0V, VDS=10V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
V
A
18
Forward Transconductance
Gate resistance
1
23
gFS
Reverse Transfer Capacitance
0.75
14.4
VSD
Rg
V
18.5
TJ=125°C
Crss
µA
±10
VGS(th)
Output Capacitance
µA
25
ID(ON)
Coss
Units
V
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
IDSS
RDS(ON)
Typ
27
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating. Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev4: September 2010
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Page 2 of 4
AO6408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
20
4.5V
2.5V
2V
12
ID(A)
ID (A)
VDS=5V
16
30
20
125°C
8
10
4
VGS=1.5V
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
0
5
40
0.5
1
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics
2.5
1.6
VGS=2.5V,6A
Normalized On-Resistance
VGS=1.8V
30
RDS(ON) (mΩ
Ω)
25°C
VGS=4.5V
20
VGS=1.8V, 4A
1.2
VGS=10V
10
VGS=4.5V, 8A
1.4
VGS=2.5V
0
VGS=10V, 8.8A
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
1.0E+01
1.0E+00
ID=6A
125°C
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ
Ω)
30
20
1.0E-02
25°C
25°C
10
1.0E-03
1.0E-04
0
0
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev4: September 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 4
AO6408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
5
Capacitance (pF)
VGS (Volts)
2400
VDS=10V
ID=8.8A
4
3
2
1
2000
Ciss
1600
1200
Coss
800
Crss
400
0
0
0
4
8
12
16
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
20
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
100.0
40
10µs
100µs
Power (W)
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
20
10
10s
0
DC
0.1
0.001
0.1
TJ(Max)=150°C
TA=25°C
30
1ms
ID (Amps)
10.0
RDS(ON)
limited
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev4: September 2010
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