Datasheet

AO7404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO7404 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is ESD protected to 1KV HBM.
VDS (V) = 20V
ID = 1 A (VGS = 4.5V)
RDS(ON) < 225mΩ (VGS = 4.5V)
RDS(ON) < 290mΩ (VGS = 2.5V)
RDS(ON) < 425mΩ (VGS = 1.8V)
D
G
PIN1
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
ID
B
Junction and Storage Temperature Range
Rev 4.0: July 2015
V
A
5
0.35
PD
TA=70°C
Maximum Junction-to-Lead C
±8
0.75
IDM
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
1
TA=25°C
Power Dissipation A
Maximum
20
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
0.22
RθJA
RθJL
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Typ
300
340
280
°C
Max
360
425
320
Units
°C/W
°C/W
°C/W
Page 1 of 4
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=250µA, VGS=0V
1
TJ=55°C
25
µA
0.55
0.8
V
186
225
262
315
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
VGS=4.5V, VDS=5V
5
VGS=4.5V, ID=1A
TJ=125°C
A
VGS=2.5V, ID=0.85A
241
290
mΩ
326
425
mΩ
1
V
0.4
A
Forward Transconductance
VDS=5V, ID=1A
2.6
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.69
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
mΩ
VGS=1.8V, ID=0.7A
gFS
Crss
µA
5
On state drain current
Coss
Units
V
VDS=16V, VGS=0V
VGS(th)
Static Drain-Source On-Resistance
Max
20
ID(ON)
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=4.5V, VDS=10V, ID=1A
S
101
pF
17
pF
14
pF
3
Ω
1.57
nC
Qgs
Gate Source Charge
0.13
nC
Qgd
Gate Drain Charge
0.36
nC
tD(on)
Turn-On DelayTime
3.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=5V, VDS=10V, RL=10Ω,
RGEN=6Ω
4
ns
15.5
ns
2.4
ns
IF=1A, dI/dt=100A/µs
6.7
Body Diode Reverse Recovery Charge IF=1A, dI/dt=100A/µs
1.6
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4.0: July 2015
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Page 2 of 4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
10
8V
VDS=5V
5V
8
3
125°C
ID(A)
6
ID (A)
25°C
4V
3.5V
3V
4
2
2.5V
1
2
VGS=2V
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Fig 1: On-Region Characteristics
2
2.5
3
1.8
VGS=1.8V
440
Normalized On-Resistance
VGS=1.8V
400
RDS(ON) (mΩ)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics
480
360
320
VGS=2.5V
280
240
VGS=4.5V
200
160
1.6
VGS=2.5V
ID=0.7A
ID=0.85A
1.4
VGS=4.5V
1.2
ID=1A
1
0.8
0
1
2
3
4
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
480
1E+01
440
1E+00
400
125°C
ID=1A
1E-01
360
320
IS (A)
RDS(ON) (mΩ)
1
125°C
1E-02
280
25°C
1E-03
240
25°C
200
1E-04
160
1
2
3
4
5
6
7
8
1E-05
0.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 4.0: July 2015
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0.4
0.8
1.2
1.6
2.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
5
VDS=10V
ID=1A
Capacitance (pF)
VGS (Volts)
4
3
2
150
Ciss
100
Coss
Crss
50
1
0
0
0.0 0.2
0.4 0.6
0.8 1.0 1.2
1.4 1.6
0
1.8 2.0
100.0
1.0
Power (W)
ID (Amps)
12
10µs
100µs
1ms
1s
8
4
10ms
10s
DC
0.1s
0
0.001
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=360°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
20
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10
15
16
TJ(Max)=150°C
TA=25°C
0.1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev 4.0: July 2015
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Page 4 of 4