WCD4C60S on Con S ilic ilico onttr olled Rec Recttifie ierr s Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Voltage (1.6V(Typ.) @ I TM ) General Description Sensitive gate triggering SCR is suitable for the appli cation where requiring high bidirectional blocking voltage capabili ty and also suitable for over voltage protection ,motor control circuit in power tool, inrush current lim it circuit and heating control system. ngs (T = 25°C unless otherwise specified) A bsolute Max axii mum Rati tin J Parameter Symbol VDRM Condition Repetitive Peak Off-State Voltage I T (AV) I T (RM S) I TSM Ratings 600 Average On-State Current(180° T i =60 °C 1.35 Conduction Angle) Tamb=25 °C 0.9 R.M.S On-State Current(180° T i =60 °C Conduction Angle) Tamb=25 °C Units V A 1/2 Cycle, 60Hz, Sine Wave Surge On-State Current 4 1.35 A 33 A Non-Repetitive I 2t I2t for Fusing t =10ms 4.5 A2s di/dt Critical rate of rise of on-state current F=60Hz,Tj=125 °C 50 A/㎲ P GM Forward Peak Gate Power Dissipation 0.5 W 0.2 W 1.2A A Forward Average Gate Power P G(AV) Tj=125 °C Dissipation I FGM Forward Peak Gate Current TJ Operating Junction Temperature -40~125 °C °C T STG Storage Temperature -40~150 °C °C Thermal Characteristics Symbol Parameter Value Units RθJc Thermal Resistance Junction to Case(DC) 15 ℃/W RθJA Thermal Resistance Junction to Ambient(DC) 100 ℃/W Jan 2009 .Rev .0 Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. WCD4C60S Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter TestConditions IDRM Repetitive Peak Off-State Current VTM Peak On-State Voltage (1) I GT Gate Trigger Current (2) VAK=VDRM RGK=1KΩ ITM=8A, tp=380㎲ VD=12V,RL=140 Valu e Units Min Typ Max - - 5 μA - - 1 mA - - 1.8 V - - 200 μA - - 0.8 V VGT Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) VD=12V,RL=3.3KΩ, RGK=1 KΩ 0.1 dv/dt Critical Rate of Rise Off-State Voltage VD=67%VDRM, RGK=1 KΩ 15 - - V/㎲ IH Holding Current IT=50mA, RGK=1 KΩ - - 5 mA IL Latching Current IT=1mA, RGK=1 KΩ 6 - - mA Rd Dynamic resistance Tj=125°C - - 100 mΩ V e: N ot ote: 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement 2/5 Steady, keep you advance WCD4C60S e ra tu Fig . 1 IT (A V)(DC) vs lead Temp mpe turre era tu Fig. 3 IGT,IH,IL Te mp mpe turre C hara ct er is isttics F ig. 2 F ig. 4 Fig.5 dv /dt VS R GK PD( A V) V S IT(AV) D(A er oo es ITSM VS N umb umber ooff cycl cycle dt VS C GK Fig.6 d v/ v/d 3/5 Steady, keep you advance WCD4C60S st at e C ha rac te ris Fig.7 OnOn-s istt ics F ig.8 R θJA VS Pulse du durra tion 4/5 Steady, keep you advance WCD4C60S age Dim ension TO252 Pack cka Dime Unit: mm 5/5 Steady, keep you advance