APOLLOELECTRON C106M

CR6C60S
Sensitive Gate Silicon Controlled Rectifiers
Symbol
○
2. Anode
IT(RMS) = 5A
▼
○
1.Cathode
TO-126
BVDRM = 600V
ITSM = 36A
3.Gate
○
1 2
3
Features
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 5 A )
Non-isolated TO-126 Package
General Description
Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage
capability and also suit able for over voltage protection, motor control circuit in power tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
600
V
VDRM
Repetitive Peak Off-State Voltage
sine wave,50 to 60Hz
IT(RMS)
R.M.S On-State Current
180° Conduction Angle
5
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
36
A
PGM
Forward Peak Gate Power Dissipation
Tj = 110 °C
1
W
Forward Average Gate Power Dissipation
Tj = 110 °C
0.1
w
Forward Peak Gate Current
Tj = 110 °C
1
PG(AV)
IFGM
TJ
TSTG
A
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
1/5
June, 2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
CR6C60S
Electrical Characteristics
Symbol
Items
Ratings
Conditions
VAK = VDRM
IDRM
Repetitive Peak Off-State
Current
VTM
Peak On-State Voltage (1)
IGT
Gate Trigger Current (2)
VGT
Gate Trigger Voltage (2)
VGD
Non-Trigger Gate Voltage (1)
VAK = 12 V, RL=100 Ω
dv/dt
Critical Rate of Rise Off-State
Voltage
Linear slope up to DV = VDRM 67% ,
Gate open
Tj = 125°C
Holding Current
VD=24V, IGT=50mA
IH
2/5
( Tj = 25 °C unless otherwise noted )
Tj = 125 °C
IT = 10 A
Typ.
Max.
─
─
100
uA
─
─
1.7
V
─
─
200
uA
─
─
1.2
V
─
V
VAK =12V(DC), RL=100 Ω
VD = 12V(DC), RL=100 Ω
Tj =125 °C
Unit
Min.
0.1
─
10
─
─
V/us
─
─
5
mA
CR6C60S
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
1
10
o
PGM(0.5W)
VGM(5V)
PG(AV)(0.1W)
0
IGM(1A)
10
Gate Voltage [V]
Max. Allowable Case Temperature [ C]
140
o
25 C
VGD(0.1V)
-1
10
-2
10
-2
-1
10
0
10
1
10
2
10
10
3
10
120
Angle = 180
o
100
π
80
2π
θ
360°
60
40
Gate Current [mA]
θ
: Conduction Angl e
0
1
2
3
4
Average On-State Current [A]
Fig 4. Thermal Response
Fig 3. Typical Forward Voltage
100
1
On-State Current [A]
o
Transient Thermal Impedance [ C/W]
10
o
125 C
10
o
25 C
1
0.5
0
10
-1
10
-2
1.0
1.5
2.0
2.5
3.0
3.5
10
4.0
-5
10
-4
-3
10
10
On-State Voltage [V]
1
10
10
IGT(25oC)
IGT(t C)
1
o
VGT(25oC)
o
0
10
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
10
VGT(t C)
-1
10
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
0.1
-50
-2
10
0
50
100
o
Junction Temperature[ C]
150
1
0.1
-50
0
50
100
150
o
Junction Temperature[ C]
3/5
CR6C60S
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
7
Max. Average Power Dissipation [W]
o
IH(25 C)
IH(toC)
10
1
0.1
-50
0
50
100
o
Junction Temperature[ C]
4/5
150
θ = 180
6
5
θ = 30
θ = 60
o
o
θ = 90
θ = 120
o
o
o
4
3
2
1
0
0
1
2
Average On-State Current [A]
3
4
CR6C60S
TO-126 Package Dimension
Symbol
A
A1
b
b1
c
D
E
e
e1
L
L1
P
F
Min.
2.417
1.14
0.71
1.22
0.45
7.479
10.875
4.5
15.25
2.1
3.835
2.92
Milimeters
Typ.
2.547
1.32
0.76
1.27
0.525
7.6145
10.925
2.285
4.56
15.5
2.2
3.885
3.05
Max.
2.677
1.5
0.81
1.32
0.6
7.75
10.975
Min.
0.095
0.045
0.028
0.048
0.018
0.295
0.428
4.62
15.75
2.3
3.935
3.18
0.178
0.6
0.083
0.151
0.115
Inches
Typ.
0.1
0.052
0.03
0.05
0.021
0.3
0.43
0.09
0.18
0.61
0.087
0.153
0.12
Max.
0.105
0.059
0.032
0.052
0.024
0.305
0.432
0.182
0.62
0.091
0.155
0.125
5/5