SCU4C60S Silicon Controlled Rectifiers Features ◆ ◆ G Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) Low On-State Voltage (1.6V(Typ.) @ ITM) ▼ ◆ A K General Description Sensitive gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. K A G 251 TO TO251 Absolute Maximum Ratings (TJ= 25°C unless otherwise specified) Symbol VDRM ConditionParameter Condition Repetitive Peak Off-State Voltage Ti =60 °C Tamb=25 °C Ti =60 °C Tamb=25 °C 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive Ratings Units 600 1.35 0.9 4 1.35 V 33 A IT(AV) Average On-State Current(180° Conduction Angle) IT(RMS) R.M.S On-State Current(180° Conduction Angle) ITSM Surge On-State Current I2t I2t for Fusing t =10ms 4.5 A2s di/dt Critical rate of rise of on-state current F=60Hz,Tj=125 °C 50 A/㎲ PGM Forward Peak Gate Power Dissipation 0.5 W PG(AV) Forward Average Gate Power Dissipation 0.2 W IFGM Forward Peak Gate Current 1.2A A TJ Operating Junction Temperature -40-125 °C °C TSTG Storage Temperature -40-150 °C °C Tj=125 °C A A Thermal Characteristics Symbol Parameter Value Units RθJc Thermal Resistance Junction to Case(DC) 15 ℃/W RθJA Thermal Resistance Junction to Ambient(DC) 100 ℃/W Jan 2009. Rev. 0 1/5 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. SCU4C60S Electrical Characteristics (TC=25℃ unless otherwise noted) Value Symbol Parameter IDRM Repetitive Peak Off-State Current VTM Peak On-State Voltage (1) IGT Gate Trigger Current (2) Test Conditions Units Min Typ Max - - 5 μA - - 1 mA - - 1.8 V 20 - 50 μA - - 0.8 V VAK=VDRM RGK=1KΩ ITM=8A, tp=380㎲ VD=12V,RL=140 VGT Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) VD=12V,RL=3.3KΩ, RGK=1 KΩ 0.1 dv/dt Critical Rate of Rise Off-State Voltage VD=67%VDRM , RGK=1 KΩ 15 - - V/㎲ IH Holding Current IT=50mA, RGK=1 KΩ - - 5 mA IL Latching Current IT=1mA, RGK=1 KΩ 6 - - mA Rd Dynamic resistance Tj=125°C - - 100 mΩ V Note: 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement 2/5 SCU4C60S Fig. 1 IT(AV) (DC DC)) vs lead Temperature Fig. 3 IGT,IH,IL Temperature Characteristics Fig.5 dv/dt VS RGK Fig. 2 PD(AV) VS IT(AV) Fig. 4 ITSM VS Number oof cycles Fig.6 dv/dt VS CGK 3/5 SCU4C60S Fig. 7 On-state Characteristics Fig.7 Fig.8 RθJA VS Pulse duration 4/5 SCU4C60S 251 Package Dimension TO TO251 Unit:mm 5/5