V I S H AY I N T E R T E C H N O L O G Y, I N C . DIODES VBUS05L1-DD1-G-08 Low-Capacitance Bidirectional ESD Diode in LLP1006 Package FEATURES • • • • ery low load capacitance: CD= 0.3 pF V Bidirectional symmetrical Miniature LLP1006 package Extremely low height: < 0.4 mm APPLICATIONS • A ntenna protection • BUS port protection in portable devices (gaming, digital cameras, MP3 players, mobile phones) RESOURCES • Datasheet: VBUS05L1 - http://www.vishay.com/ppg?81188 • For technical questions contact [email protected] • Material categorization: For definitions of compliance please see http://www.vishay.com/doc?99912 One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0193-1411 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . DIODES VBUS05L1-DD1-G-08 Low-Capacitance Bidirectional ESD Diode in LLP1006 Package ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VBUS 05L1-DD1 VBUS05L1-DD1-G-08 8000 8000 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VBUS05L1-DD1 LLP1006-2M R 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL VALUE Peak pulse current Acc. IEC 61000-4-5; tp = 8/20 µs; single shot IPPM 2 A Peak pulse power Pin 1 to pin 2, acc. IEC 61000-4-5; tp = 8/20 µs; single shot PPP 34 W Contact discharge acc. IEC 61000-4-2; 10 pulses ESD immunity Operating temperature ± 15 kV ± 16 kV TJ - 40 to + 125 °C TSTG - 40 to + 150 °C VESD Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature UNIT ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 5.5 V Reverse voltage at IR = 0.05 µA VR 5.5 - - V Reverse current at VRWM = 5.5 V IR - - 0.05 µA at IR = 1 mA VBR 7 8.4 9.5 V at IPP 1 A VC - 11.5 14 V at IPP = IPPM = 2 A VC - 14 17 at VR = 0 V, f = 1 MHz CD - at VR = 2.5 V, f = 1 MHz CD - Protection paths Reverse stand-off voltage Reverse breakdown voltage Reverse clamping voltage Capacitance Revision 31-May-12 www.vishay.com V VBUS05L1-DD1 0.34 pF 0.33 0.4 pF Vishay Semiconductors Rev. 1.2, 31-May-12 1 LOAD CAPACITANCE VBUS05L1-DD1: ESD PROTECTION WITH LOWEST Document Number: 81188 For technical questions, contact: [email protected] The VBUS05L1-DD1 is a Bidirectional and Symmetrical (BiSy) ESD-protection device which clamps positive and negative THIS DOCUMENT IS SUBJECT TO CHANGEbetween WITHOUT NOTICE. THE PRODUCTS AND THIS DOCUMENT overvoltage transients to ground. Connected the signal or data line and DESCRIBED the ground HEREIN the VBUS05L1-DD1 offers a high ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 isolation (low leakage current, lowest capacitance) within the specified working range. Due to the short leads and small package size of the tiny LLP1006-2M package the line inductance is very low, so that fast transients like an ESD-strike can be clamped with minimal over- or undershoots. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.0 120 % 0.9 Rise time = 0.7 ns to 1 ns PRODUCT SHEET 0.7 80 % 60 % 53 % 40 % both polarities 0.8 2/2 CD (pF) Discharge Current IESD 100 % f = 1 MHz 0.6 0.5 VMN-PT0193-1411 0.4 0.3 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO 27 % 0.2 SPECIFIC DISCLAIMERS, 20SET % FORTH AT www.vishay.com/doc?91000 0.1