GSOT03 to GSOT36 www.vishay.com Vishay Semiconductors Single-Line ESD Protection in SOT-23 FEATURES • Single-line ESD-protection device 3 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV 2 1 20421 20512 1 • Space saving SOT-23 package • e3 - Sn MARKING (example only) YYY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 XX XX • AEC-Q101 qualified available 20357 YYY = type code (see table below) XX = date code ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PART RoHS-COMPLIANT + NUMBER AEC-Q101 TIN LEAD (Pb)-FREE (EXAMPLE) QUALIFIED PLATED STANDARD GREEN GSOT05- E GSOT05GSOT05- H GSOT05- H H GSOT05- H ORDERING CODE (EXAMPLE) 3 -08 GSOT05-E3-08 -08 GSOT05-G3-08 3 -08 GSOT05-HE3-08 G 3 -08 GSOT05-HG3-08 G GSOT05- 10K PER 13" REEL (8 mm TAPE), 10K/BOX = MOQ 3 E GSOT05- 3K PER 7" REEL (8 mm TAPE), 15K/BOX = MOQ G E GSOT05- PACKAGING CODE E G 3 -18 GSOT05-E3-18 3 -18 GSOT05-G3-18 3 -18 GSOT05-HE3-18 3 -18 GSOT05-HG3-18 PACKAGE DATA DEVICE NAME PACKAGE NAME GSOT03 SOT-23 GSOT04 SOT-23 GSOT05 SOT-23 GSOT08 SOT-23 GSOT12 SOT-23 GSOT15 SOT-23 GSOT24 SOT-23 GSOT36 SOT-23 Rev. 2.4., 23-Feb-16 TYPE CODE ENVIRONMENTAL STATUS WEIGHT 03 03G 04 04G 05 05G 08 08G 12 12G 15 15G 24 24G 36 36G Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) Document Number: 85807 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03 to GSOT36 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT03 PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 369 W ± 30 kV ± 30 kV ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses VESD TJ -40 to +125 °C TSTG -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 429 W ± 30 kV Operating temperature Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT04 PARAMETER ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV TJ -40 to +125 °C TSTG -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 480 W ± 30 kV Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses VESD Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT05 PARAMETER ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV TJ -40 to +125 °C TSTG -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 18 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 345 W ± 30 kV ± 30 kV TJ -40 to +125 °C TSTG -55 to +150 °C Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses VESD Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT08 PARAMETER ESD immunity Operating temperature Storage temperature Rev. 2.4., 23-Feb-16 Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD Document Number: 85807 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03 to GSOT36 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT12 PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 12 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 312 W ± 30 kV ± 30 kV ESD immunity Operating temperature Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD TJ -40 to +125 °C TSTG -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 8 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 230 W ± 30 kV Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT15 PARAMETER ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV TJ -40 to +125 °C TSTG -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 5 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 235 W ± 30 kV Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses VESD Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT24 PARAMETER ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV TJ -40 to +125 °C TSTG -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 3.5 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 248 W ± 30 kV ± 30 kV TJ -40 to +125 °C TSTG -55 to +150 °C Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses VESD Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT36 PARAMETER ESD immunity Operating temperature Storage temperature Rev. 2.4., 23-Feb-16 Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD Document Number: 85807 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03 to GSOT36 www.vishay.com Vishay Semiconductors BiAs-MODE (1-line Bidirectional Asymmetrical protection mode) With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection diode. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction through the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and Asymmetrical (BiAs). L1 3 1 BiAs 2 Ground 20422 ELECTRICAL CHARACTERISTICS GSOT03 (Tamb = 25 °C unless otherwise specified) between pin 3 and pin 1 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. Number of lines which can be protected Nchannel - Max. reverse working voltage VRWM - Reverse voltage at IR = 100 μA VR 3.3 Reverse current at VR = 3.3 V IR Reverse breakdown voltage at IR = 1 mA VBR - Protection paths Reverse stand-off voltage Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 1.6 V; f = 1 MHz VC VF CD MAX. UNIT - 1 lines - 3.3 V - - V - - 100 μA 4 4.6 5.5 V 5.7 7.5 V 10 12.3 V - 1 1.2 V - 4.5 - V - 420 600 pF - 260 - pF ELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 °C unless otherwise specified) between pin 3 and pin 1 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 4 V Reverse voltage at IR = 20 μA VR 4 - - V Reverse current at VR = 4 V IR - - 20 μA Reverse breakdown voltage at IR = 1 mA VBR 5 6.1 7 V Protection paths Reverse stand-off voltage Rev. 2.4., 23-Feb-16 Document Number: 85807 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03 to GSOT36 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 °C unless otherwise specified) between pin 3 and pin 1 PARAMETER Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2 V; f = 1 MHz SYMBOL VC VF CD MIN. TYP. MAX. UNIT - 7.5 9 V - 11.2 14.3 V - 1 1.2 V - 4.5 - V - 310 450 pF - 200 - pF ELECTRICAL CHARACTERISTICS GSOT05 (Tamb = 25 °C unless otherwise specified) between pin 3 and pin 1 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 5 V Reverse voltage at IR = 10 μA VR 5 - - V Reverse current at VR = 5 V IR - - 10 μA Reverse breakdown voltage at IR = 1 mA VBR 6 6.8 8 V - 7 8.7 V - 12 16 V - 1 1.2 V Protection paths Reverse stand-off voltage Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2.5 V; f = 1 MHz VC VF CD - 4.5 - V - 260 350 pF - 150 - pF ELECTRICAL CHARACTERISTICS GSOT08 (Tamb = 25 °C unless otherwise specified) between pin 3 and pin 1 PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 8 V Reverse voltage at IR = 5 μA VR 8 - - V Reverse current at VR = 8 V IR - - 5 μA Reverse breakdown voltage at IR = 1 mA VBR 9 10 11 V - 10.7 13 V - 15.2 19.2 V - 1 1.2 V - 3 - V - 160 250 pF - 80 - pF Reverse stand-off voltage Reverse clamping voltage Forward clamping voltage Capacitance Rev. 2.4., 23-Feb-16 at IPP = 1 A at IPP = IPPM = 18 A at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz VC VF CD Document Number: 85807 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03 to GSOT36 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT12 (Tamb = 25 °C unless otherwise specified) between pin 3 and pin 1 PARAMETER Protection paths Reverse stand-off voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - Max. reverse working voltage VRWM - - 1 lines - 12 V Reverse voltage at IR = 1 μA VR 12 - - V Reverse current at VR = 12 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 13.5 15 16.5 V - 15.4 18.7 V - 21.2 26 V Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 12 A at IPP = 1 A at IPP = IPPM = 12 A at VR = 0 V; f = 1 MHz at VR = 6 V; f = 1 MHz VC VF CD - 1 1.2 V - 2.2 - V - 115 150 pF - 50 - pF ELECTRICAL CHARACTERISTICS GSOT15 (Tamb = 25 °C unless otherwise specified) between pin 3 and pin 1 PARAMETER Protection paths Reverse stand-off voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 15 V Reverse voltage at IR = 1 μA VR 15 - - V Reverse current at VR = 15 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 16.5 18 20 V - 19.4 23.5 V - 24.8 28.8 V - 1 1.2 V - 1.8 - V - 90 120 pF - 35 - pF MAX. UNIT Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 8 A at IPP = 1 A at IPP = IPPM = 8 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz VC VF CD ELECTRICAL CHARACTERISTICS GSOT24 (Tamb = 25 °C unless otherwise specified) between pin 3 and pin 1 PARAMETER Protection paths Reverse stand-off voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 24 V Reverse voltage at IR = 1 μA VR 24 - - V Reverse current at VR = 24 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 27 30 33 V Reverse clamping voltage Forward clamping voltage Capacitance Rev. 2.4., 23-Feb-16 at IPP = 1 A at IPP = IPPM = 5 A at IPP = 1 A at IPP = IPPM = 5 A at VR = 0 V; f = 1 MHz at VR = 12 V; f = 1 MHz VC VF CD - 34 41 V - 41 47 V - 1 1.2 V - 1.4 - V - 65 80 pF - 20 - pF Document Number: 85807 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03 to GSOT36 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT36 (Tamb = 25 °C unless otherwise specified) between pin 3 and pin 1 PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. Number of lines which can be protected Nchannel - Max. reverse working voltage VRWM - Reverse stand-off voltage MAX. UNIT - 1 lines - 36 V Reverse voltage at IR = 1 μA VR 36 - - V Reverse current at VR = 36 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 39 43 47 V - 49 60 V at IPP = 1 A Reverse clamping voltage VC at IPP = IPPM = 3.5 A at IPP = 1 A Forward clamping voltage VF at IPP = IPPM = 3.5 A at VR = 0 V; f = 1 MHz Capacitance CD at VR = 18 V; f = 1 MHz 100 - 59 71 V - 1 1.2 V - 1.3 - V - 52 65 pF - 12 - pF 8 Pin 3 - 1 7 GSOT05 6 GSOT04 5 1 VR in V IF in mA 10 0.1 TJ = 25 °C GSOT03 4 3 2 0.01 1 0.001 0.5 0.6 0.7 0.8 0.9 VF in V 45 0.1 1 10 100 1000 10 000 100 000 IR in µA Fig. 1 - Typical Forward Current IF vs. Forward Voltage VF 50 0 0.01 Fig. 3 - Typical Reverse Voltage VR vs. Reverse Current IR Pin 3 - 1 GSOT36 40 TJ = 25 °C 35 VR in V 30 GSOT24 25 20 GSOT15 15 GSOT12 10 GSOT08 5 0 0.01 0.1 1 10 100 1000 10 000 100 000 IR in µA Fig. 2 - Typical Reverse Voltage VR vs. Reverse Current IR Rev. 2.4., 23-Feb-16 Document Number: 85807 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03 to GSOT36 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 0.95 (0.037) Unreeling direction SOT-23 Orientation in carrier tape SOT-23 S8-V-3929.01-006 (4) 04.02.2010 22607 Rev. 2.4., 23-Feb-16 Top view Document Number: 85807 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000