GSOT03 to GSOT36 Datasheet

GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
Single-Line ESD Protection in SOT-23
FEATURES
• Single-line ESD-protection device
3
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
2
1
20421
20512
1
• Space saving SOT-23 package
• e3 - Sn
MARKING (example only)
YYY
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
XX
XX
• AEC-Q101 qualified available



20357
YYY = type code (see table below)
XX = date code
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PART
RoHS-COMPLIANT +
NUMBER
AEC-Q101
TIN
LEAD (Pb)-FREE
(EXAMPLE) QUALIFIED
PLATED
STANDARD
GREEN
GSOT05-
E
GSOT05GSOT05-
H
GSOT05-
H
H
GSOT05-
H
ORDERING CODE
(EXAMPLE)
3
-08
GSOT05-E3-08
-08
GSOT05-G3-08
3
-08
GSOT05-HE3-08
G
3
-08
GSOT05-HG3-08
G
GSOT05-
10K PER 13" REEL
(8 mm TAPE),
10K/BOX = MOQ
3
E
GSOT05-
3K PER 7" REEL
(8 mm TAPE),
15K/BOX = MOQ
G
E
GSOT05-
PACKAGING CODE
E
G
3
-18
GSOT05-E3-18
3
-18
GSOT05-G3-18
3
-18
GSOT05-HE3-18
3
-18
GSOT05-HG3-18
PACKAGE DATA
DEVICE
NAME
PACKAGE
NAME
GSOT03
SOT-23
GSOT04
SOT-23
GSOT05
SOT-23
GSOT08
SOT-23
GSOT12
SOT-23
GSOT15
SOT-23
GSOT24
SOT-23
GSOT36
SOT-23
Rev. 2.4., 23-Feb-16
TYPE
CODE
ENVIRONMENTAL
STATUS
WEIGHT
03
03G
04
04G
05
05G
08
08G
12
12G
15
15G
24
24G
36
36G
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
UL 94 V-0
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
UL 94 V-0
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
UL 94 V-0
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
UL 94 V-0
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
UL 94 V-0
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
UL 94 V-0
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
UL 94 V-0
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
UL 94 V-0
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
Document Number: 85807
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT03
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
30
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
369
W
± 30
kV
± 30
kV
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
VESD
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
30
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
429
W
± 30
kV
Operating temperature
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT04
PARAMETER
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
30
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
480
W
± 30
kV
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
VESD
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT05
PARAMETER
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
18
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
345
W
± 30
kV
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
VESD
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT08
PARAMETER
ESD immunity
Operating temperature
Storage temperature
Rev. 2.4., 23-Feb-16
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VESD
Document Number: 85807
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT12
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
12
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
312
W
± 30
kV
± 30
kV
ESD immunity
Operating temperature
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VESD
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
8
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
230
W
± 30
kV
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT15
PARAMETER
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
5
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
235
W
± 30
kV
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
VESD
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT24
PARAMETER
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
3.5
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
248
W
± 30
kV
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
VESD
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT36
PARAMETER
ESD immunity
Operating temperature
Storage temperature
Rev. 2.4., 23-Feb-16
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VESD
Document Number: 85807
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
BiAs-MODE (1-line Bidirectional Asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and
pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is
between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and
pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and
Asymmetrical (BiAs).
L1
3
1
BiAs
2
Ground
20422
ELECTRICAL CHARACTERISTICS GSOT03 (Tamb = 25 °C unless otherwise specified) 
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
Number of lines which can be protected
Nchannel
-
Max. reverse working voltage
VRWM
-
Reverse voltage
at IR = 100 μA
VR
3.3
Reverse current
at VR = 3.3 V
IR
Reverse breakdown voltage
at IR = 1 mA
VBR
-
Protection paths
Reverse stand-off voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 1.6 V; f = 1 MHz
VC
VF
CD
MAX.
UNIT
-
1
lines
-
3.3
V
-
-
V
-
-
100
μA
4
4.6
5.5
V
5.7
7.5
V
10
12.3
V
-
1
1.2
V
-
4.5
-
V
-
420
600
pF
-
260
-
pF
ELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 °C unless otherwise specified) 
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
4
V
Reverse voltage
at IR = 20 μA
VR
4
-
-
V
Reverse current
at VR = 4 V
IR
-
-
20
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
5
6.1
7
V
Protection paths
Reverse stand-off voltage
Rev. 2.4., 23-Feb-16
Document Number: 85807
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 °C unless otherwise specified) 
between pin 3 and pin 1
PARAMETER
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 2 V; f = 1 MHz
SYMBOL
VC
VF
CD
MIN.
TYP.
MAX.
UNIT
-
7.5
9
V
-
11.2
14.3
V
-
1
1.2
V
-
4.5
-
V
-
310
450
pF
-
200
-
pF
ELECTRICAL CHARACTERISTICS GSOT05 (Tamb = 25 °C unless otherwise specified) 
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
5
V
Reverse voltage
at IR = 10 μA
VR
5
-
-
V
Reverse current
at VR = 5 V
IR
-
-
10
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
6
6.8
8
V
-
7
8.7
V
-
12
16
V
-
1
1.2
V
Protection paths
Reverse stand-off voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
VC
VF
CD
-
4.5
-
V
-
260
350
pF
-
150
-
pF
ELECTRICAL CHARACTERISTICS GSOT08 (Tamb = 25 °C unless otherwise specified) 
between pin 3 and pin 1
PARAMETER
Protection paths
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
8
V
Reverse voltage
at IR = 5 μA
VR
8
-
-
V
Reverse current
at VR = 8 V
IR
-
-
5
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
9
10
11
V
-
10.7
13
V
-
15.2
19.2
V
-
1
1.2
V
-
3
-
V
-
160
250
pF
-
80
-
pF
Reverse stand-off voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
Rev. 2.4., 23-Feb-16
at IPP = 1 A
at IPP = IPPM = 18 A
at IPP = 1 A
at IPP = IPPM = 18 A
at VR = 0 V; f = 1 MHz
at VR = 4 V; f = 1 MHz
VC
VF
CD
Document Number: 85807
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT12 (Tamb = 25 °C unless otherwise specified) 
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
Max. reverse working voltage
VRWM
-
-
1
lines
-
12
V
Reverse voltage
at IR = 1 μA
VR
12
-
-
V
Reverse current
at VR = 12 V
IR
-
-
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
13.5
15
16.5
V
-
15.4
18.7
V
-
21.2
26
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IPP = 1 A
at IPP = IPPM = 12 A
at IPP = 1 A
at IPP = IPPM = 12 A
at VR = 0 V; f = 1 MHz
at VR = 6 V; f = 1 MHz
VC
VF
CD
-
1
1.2
V
-
2.2
-
V
-
115
150
pF
-
50
-
pF
ELECTRICAL CHARACTERISTICS GSOT15 (Tamb = 25 °C unless otherwise specified) 
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
15
V
Reverse voltage
at IR = 1 μA
VR
15
-
-
V
Reverse current
at VR = 15 V
IR
-
-
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
16.5
18
20
V
-
19.4
23.5
V
-
24.8
28.8
V
-
1
1.2
V
-
1.8
-
V
-
90
120
pF
-
35
-
pF
MAX.
UNIT
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IPP = 1 A
at IPP = IPPM = 8 A
at IPP = 1 A
at IPP = IPPM = 8 A
at VR = 0 V; f = 1 MHz
at VR = 7.5 V; f = 1 MHz
VC
VF
CD
ELECTRICAL CHARACTERISTICS GSOT24 (Tamb = 25 °C unless otherwise specified) 
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
24
V
Reverse voltage
at IR = 1 μA
VR
24
-
-
V
Reverse current
at VR = 24 V
IR
-
-
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
27
30
33
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
Rev. 2.4., 23-Feb-16
at IPP = 1 A
at IPP = IPPM = 5 A
at IPP = 1 A
at IPP = IPPM = 5 A
at VR = 0 V; f = 1 MHz
at VR = 12 V; f = 1 MHz
VC
VF
CD
-
34
41
V
-
41
47
V
-
1
1.2
V
-
1.4
-
V
-
65
80
pF
-
20
-
pF
Document Number: 85807
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT36 (Tamb = 25 °C unless otherwise specified) 
between pin 3 and pin 1
PARAMETER
Protection paths
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
Number of lines which can be protected
Nchannel
-
Max. reverse working voltage
VRWM
-
Reverse stand-off voltage
MAX.
UNIT
-
1
lines
-
36
V
Reverse voltage
at IR = 1 μA
VR
36
-
-
V
Reverse current
at VR = 36 V
IR
-
-
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
39
43
47
V
-
49
60
V
at IPP = 1 A
Reverse clamping voltage
VC
at IPP = IPPM = 3.5 A
at IPP = 1 A
Forward clamping voltage
VF
at IPP = IPPM = 3.5 A
at VR = 0 V; f = 1 MHz
Capacitance
CD
at VR = 18 V; f = 1 MHz
100
-
59
71
V
-
1
1.2
V
-
1.3
-
V
-
52
65
pF
-
12
-
pF
8
Pin 3 - 1
7
GSOT05
6
GSOT04
5
1
VR in V
IF in mA
10
0.1
TJ = 25 °C
GSOT03
4
3
2
0.01
1
0.001
0.5
0.6
0.7
0.8
0.9
VF in V
45
0.1
1
10
100
1000
10 000 100 000
IR in µA
Fig. 1 - Typical Forward Current IF vs. Forward Voltage VF
50
0
0.01
Fig. 3 - Typical Reverse Voltage VR vs. Reverse Current IR
Pin 3 - 1
GSOT36
40
TJ = 25 °C
35
VR in V
30
GSOT24
25
20
GSOT15
15
GSOT12
10
GSOT08
5
0
0.01
0.1
1
10
100
1000
10 000 100 000
IR in µA
Fig. 2 - Typical Reverse Voltage VR vs. Reverse Current IR
Rev. 2.4., 23-Feb-16
Document Number: 85807
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.95 (0.037)
Unreeling direction
SOT-23
Orientation in carrier tape
SOT-23
S8-V-3929.01-006 (4)
04.02.2010
22607
Rev. 2.4., 23-Feb-16
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Document Number: 85807
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Revision: 02-Oct-12
1
Document Number: 91000