RPM-075PT Sensors Phototransistor, surface mount type RPM-075PT Quite new phototransistor which peak sensitivity is designed as same level as human eye. Best sensor to detect illuminance. (Peak sensitivity is 600nm.) Small and light weight package which can be used for reflow soldering and Pd free soldering. !External dimensions (Units : mm) !Application Control of lighting cellular phones, LCD displays, etc. Control of strobe. (DSC, camcorder, etc.) Unspecified tolerance shall be ±0.1 (0.15) Emitter mark 1.25 !Features 1) Best sensor to detect illuminance. (Peak sensitivity is 600nm.) 2) Small (2125) and light weight package (3mg) which can be used for reflow soldering and Pd free soldering. 3) Linear against wide range of illuminance from a few Lx to 10000Lx over. 4) Use Si good for an environ ment. (not CdS) 1.4 0.25 0.8 2.0 +0.2 −0 1.2 2 1 1 2 Emitter Collector !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-emitter voltage Parameter VCEO 20 V Emitter-collector voltage VECO 5 V IC 10 mA Collector current PC 50 mW Operating temperature Topr −30∼+85 ˚C Storage temperature Tstg −40∼+100 ˚C Collector power dissipation !Electrical and optical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Light current IC 0.25 0.4 0.6 mA VCE=5V, E=500Lx Dark current ICEO − − 0.5 µA VCE=10V (Black box) Parameter λP − 600 − nm VCE(sat) − − 0.4 V Half-angle θ1/2 − ±60 − deg Response time tr·tf − 10 − µs Peak sensitivity wavelength Collector-emitter saturation voltage Conditions − IC=0.1mA, E=500Lx − VCC=5V, IC=1mA, RL=100Ω 1/2 RPM-075PT Sensors !Electrical and optical characteristic curves 1 1000 COLLECTOR CURRENT : IC (mA) 1.2 1 0.8 0.6 0.4 0.2 0 0 250 500 750 1000 E=750Lx 0.5 E=500Lx E=250Lx 0 0 1250 2 3 4 5 COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.1 Collector current-Illuminance Fig.2 Output characteristics VCE=10V 10 VCE=20V VCE=30V 1 0.1 0.01 −50 −25 0 25 50 75 80 60 40 20 0 400 Fig.4 Dark current-Ambient temperature 500 600 700 800 RELATIVE EMITTING STRENGTH (%) RL=100kΩ 1000 RL=50kΩ RL=20kΩ RL=1kΩ 0.01 0.1 1 10 100 50 75 100 40 20 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) Fig.6 Collector dissipation -Ambient temperature 100 90 80 70 60 50 40 30 20 10 0 −90 25 60 0 −25 900 1000 1100 100 Ta=25C VCC=5V 0 80 Fig.7 Spectral sensitivity characteristics 1000 −25 100 OPTICAL WAVELENGTH : λ (nm) AMBIENT TEMPERATURE : Ta (°C) 100 0.001 1 −50 120 100 100 10 Fig.3 Relative output-Ambient temperature COLLECTOR DISSIPATION : PC (mW) RELATIVE SENSITIVITYT : IC (%) 100 100 AMBIENT TEMPERATURE : Ta (°C) 120 1000 RESPONSE TIME : tr (µs) 1 ILLUMINANCE : E (Lx) 10000 DARK CURRENT : ICEO (nA) E=1000Lx RELATIVE EMITTING STRENGTH (%) COLLECTOR CURRENT : IC (mA) VCE=5V 1.4 RELATIVE COLLECTOR CURRENT : IC (%) 1.6 −60 −30 0 30 60 90 90 80 70 60 50 40 30 20 10 0 −90 −60 −30 0 30 60 COLLECTOR CURRENT : IC (mA) ANGULAR DISPLACEMENT : θ (deg) ANGULAR DISPLACEMENT : θ (deg) Fig.7 Response time-Collector current Fig.8 Directional pattern Fig.9 Directional pattern 90 2/2