High Sensitivity Chip Sensor, Side veiw type RPM-012PB The RPM-012PB is ultra small size and high sensitivity chip sensor. Original technology, original structure and original optical design enable to use Automatic mounting machine, Reflow, ultra small size, high sensitivity. Dimensions (Units : mm) Application Optical control equipment Receiver for sensors Note) 1.Unspecified tolerance shall be + − 0.2. 2.Dimension in parenthesis are show for reference. 0.25 1 2 2 2-0.4 Features 1) High sensitivity by 2 lenze. 2) Ultra-compact surface mount package. (3mm x 3mm x 2mm) 3) It is possible to do Reflow. 3 0.8 3 2 (1.15) R1 Internal connection diagram 1 2 Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-emitter voltage Parameter VCEO 32 V Emitter-collector voltage VECO 5 V IC 20 mA Collector current PC 75 mW Operating temperature Topr −30∼+85 ˚C Storage temperature Tstg −40∼+100 ˚C Collector power dissipation Electrical and optical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Light current IC 0.56 1.6 4.5 mA VCE=5V, E=500Lx Dark current ICEO − − 0.5 μA VCE=10V (Black box) Parameter λP − 800 − nm VCE(sat) − − 0.4 V Half-angle θ1/2 − ±12 − deg Response time tr·tf − 10 − μs Peak sensitivity wavelength Collector-emitter saturation voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/2 Conditions − IC=0.1mA, E=500Lx − VCC=5V, IC=1mA, RL=100Ω 2010.06 - Rev.A RPM-012PB Data Sheet Electrical and optical characteristic curves 3 2 1 3 E=750Lx 2 E=500Lx 1 E=250Lx 0 250 500 750 1000 1250 0 ILLUMINANCE : E (Lx) RELATIVE SENSITIVITYT : IC (%) VCE=10V 10 VCE=20V VCE=30V 1 0.1 −25 0 25 50 75 1 −50 −25 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) Fig.2 Output characteristics Fig.3 Relative output−Ambient temperature 1000 Ta=25 C VCC=10V 80 60 40 20 0 400 500 600 700 800 900 1000 1100 1200 100 100 RL=1kΩ RL=500Ω 10 RL=100Ω 1 0.1 1 10 100 AMBIENT TEMPERATURE : Ta (°C) OPTICAL WAVELENGTH : λ (nm) COLLECTOR CURRENT : IC (mA) Fig.4 Dark current−Ambient temperature Fig.5 Spectral sensitivity characteristics Fig.6 Response time-Collector current − 90 0 100 + RELATIVE EMITTING STRENGTH (%) DARK CURRENT : ICEO (nA) 100 100 RELATIVE EMITTING STRENGTH (%) 30 100 1000 0.01 −50 20 10 COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.1 Collector current−llluminance 10000 10 100 RESPONSE TIME : tr (μs) 0 0 E=1000Lx 4 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) VCE=5V RELATIVE COLLECTOR CURRENT : IC (%) 1000 4 80 70 60 50 40 30 20 10 0 −90 −60 −30 0 30 60 90 − 90 0 80 70 60 50 40 30 20 10 0 −90 −60 −30 0 30 60 ANGULAR DISPLACEMENT : θ (deg) ANGULAR DISPLACEMENT : θ (deg) Fig.7 Directional pattern(1) Fig.7 Directional pattern(1) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ + 2/2 90 2010.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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