DS2855AB 01

®
RT2855A/B
4A, 18V, 650kHz, ACOTTM Synchronous Step-Down Converter
General Description
The RT2855A/B are high-performance 650kHz 4A stepdown regulators with internal power switches and
synchronous rectifiers. They feature quick transient
response using their Advanced Constant On-Time
(ACOT TM) control architecture that provides stable
operation with small ceramic output capacitors and without
complicated external compensation, among other benefits.
The input voltage range is from 4.5V to 18V and the output
is adjustable from 0.765V to 7V.
avoid low-frequency interference while the RT2855A
features a power-saving discontinuous operating mode at
light loads.
Features



TM
The proprietary ACOT control improves upon other fastresponse constant on-time architectures, achieving nearly
constant switching frequency over line, load, and output
voltage ranges. Since there is no internal clock, response
to transients is nearly instantaneous and inductor current
can ramp quickly to maintain output regulation without
large bulk output capacitance. The RT2855A/B are stable
with and optimized for ceramic output capacitors
With internal 70mΩ switches and 30mΩ synchronous
rectifiers, the RT2855A/B display excellent efficiency and
good behavior across a range of applications, especially
for low output voltages and low duty cycles. Cycle-bycycle current limit, input under-voltage lock-out, externallyadjustable soft-start, output under- and over-voltage
protection, and thermal shutdown provide safe and smooth
operation in all operating conditions.
The RT2855A and RT2855B are each available in
WQFN-16L 3x3 package, with exposed thermal pads. The
RT2855B switches continuously even at light loads to












Fast Transient Response
Steady 650kHz Switching Frequency at all Load
Current (RT2855B)
Discontinuous operating mode at Light Load
(RT2855A)
4A Output Current
Advanced Constant On-Time (ACOTTM) Control
Optimized for Ceramic Output Capacitors
4.5V to 18V Input Voltage Range
Internal 70mΩ
Ω Switch and 30mΩ
Ω Synchronous
Rectifier
0.765V to 7V Adjustable Output Voltage
Externally-adjustable, Pre-biased Compatible SoftStart
Cycle-by-Cycle Current Limit
Optional Output Discharge Function
Output Over- and Under-voltage Shut-down
 Latched (RT2855ALGQW/RT2855BLGQW Only)
 Hiccup Mode (RT2855AHGQW/RT2855BHGQW
Only)
Input Under Voltage Lockout
Thermal Shutdown
Simplified Application Circuit
VIN
RT2855A/B
VIN
SW
VCC
Power Good
VREG5
Input Signal
PGOOD
September 2015
BOOT
VS
FB
EN
SS
VREG5
GND PGND
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VOUT
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RT2855A/B
Applications





Industrial and Commercial Low Power Systems
Computer Peripherals
LCD Monitors and TVs
Green Electronics/Appliances
Point of Load Regulation for High-Performance DSPs,
FPGAs, and ASICs
Ordering Information
RT2855A/B
Package Type
QW : WQFN-16L 3x3 (W-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
H : Hiccup Mode OVP & UVP
L : Latched OVP & UVP
A : PSM
B : PWM
Marking Information
RT2855AHGQW
4G= : Product Code
4G=YM
DNN
YMDNN : Date Code
Note :
Richtek products are :

RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.

Suitable for use in SnPb or Pb-free soldering processes.
RT2855ALGQW
4F= : Product Code
YMDNN : Date Code
Pin Configurations
(TOP VIEW)
VS
VCC
VIN
VIN
4F=YM
DNN
16 15 14 13
RT2855BHGQW
4E= : Product Code
YMDNN : Date Code
4D= : Product Code
YMDNN : Date Code
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2
12
2
11
GND
3
10
17
4
5
RT2855BLGQW
4D=YM
DNN
1
6
7
9
BOOT
SW
SW
SW
8
PGOOD
EN
PGND
PGND
4E=YM
DNN
FB
VREG5
SS
GND
WQFN-16L 3x3
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RT2855A/B
Functional Pin Description
Pin No.
Pin Name
Pin Function
1
FB
Feedback Input Voltage. Connect FB to the midpoint of the external feedback
resistive divider to sense the output voltage. Place the resistive divider within
5mm from the FB pin. The IC regulates VFB at 0.765V (typical).
2
VREG5
Internal Regulator Output. Connect a 1F capacitor to GND to stabilize
output voltage.
3
SS
Soft-Start Control. Connect an external capacitor between this pin and GND
to set the soft-start time.
4
GND
Ground.
5
PGOOD
Open Drain Power-good Output. PGOOD connects to PGND whenever VFB
is less than 90% of its regulation threshold (typical).
6
EN
Enable Control Input. A logic-high enables the converter; a logic-low forces
the IC into shutdown mode reducing the supply current to less than 10A.
PGND
Power Ground. PGND connects to the source of the internal N-channel
MOSFET synchronous rectifier and to other power ground nodes of the IC.
The exposed pad and the 2 PGND pins should be well soldered to the input
and output capacitors and to a large PCB area for good power dissipation.
SW
Switching Node. SW is the source of the internal N-channel MOSFET switch
and the drain of the internal N-channel MOSFET synchronous rectifier.
Connect SW to the inductor with a wide short PCB trace and minimize its
area to reduce EMI.
BOOT
Bootstrap Supply for High Side Gate Driver. Connect a 0.1F capacitor
between BOOT and SW to power the internal gate driver.
13, 14
VIN
Power Input. The input voltage range is from 4.5V to 18V. Must bypass with a
suitably large (10F x 2) ceramic capacitors at this pin.
15
VCC
Internal Linear Regulator Supply Input. VCC supplies power for the internal
linear regulator that powers the IC. Connect VIN to the input voltage and
bypass to ground with a 0.1F ceramic capacitor.
16
VS
Output Voltage Sense Input Pin.
7, 8,
17 (Exposed pad)
9, 10, 11
12
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DS2855A/B-01
September 2015
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RT2855A/B
Function Block Diagram
BOOT
VCC VREG5
POR &
Reg
EN
VBIAS
Min.
Off-Time
OC
UV & OV
VREG5
6µA
SS
VIN
FB
VS
VREG5
VIN
VREF
Control
Driver
SW
PGND
SW
ZC
Ripple
Gen.
FB
+
Comparator
GND
FB
0.9 x VREF
Comparator
-
PGOOD
+
On-Time
Detailed Description
The RT2855A/B are high-performance 650kHz 4A stepdown regulators with internal power switches and
synchronous rectifiers. They feature an Advanced Constant
On-Time (ACOTTM) control architecture that provides
stable operation with ceramic output capacitors without
complicated external compensation, among other benefits.
The input voltage range is from 4.5V to 18V and the output
is adjustable from 0.765V to 7V.
The proprietary ACOTTM control scheme improves upon
other constant on-time architectures, achieving nearly
constant switching frequency over line, load, and output
voltage ranges. The RT2855A/B are optimized for ceramic
output capacitors. Since there is no internal clock,
response to transients is nearly instantaneous and inductor
current can ramp quickly to maintain output regulation
without large bulk output capacitance.
Constant On-Time (COT) Control
The heart of any COT architecture is the on-time oneshot. Each on-time is a pre-determined “fixed” period
that is triggered by a feedback comparator. This robust
arrangement has high noise immunity and is ideal for low
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4
duty cycle applications. After the on-time one-shot period,
there is a minimum off-time period before any further
regulation decisions can be considered. This arrangement
avoids the need to make any decisions during the noisy
time periods just after switching events, when the
switching node (SW) rises or falls. Because there is no
fixed clock, the high-side switch can turn on almost
immediately after load transients and further switching
pulses can ramp the inductor current higher to meet load
requirements with minimal delays.
Traditional current mode or voltage mode control schemes
typically must monitor the feedback voltage, current
signals (also for current limit), and internal ramps and
compensation signals, to determine when to turn off the
high-side switch and turn on the synchronous rectifier.
Weighing these small signals in a switching environment
is difficult to do just after switching large currents, making
those architectures problematic at low duty cycles and in
less than ideal board layouts.
Because no switching decisions are made during noisy
time periods, COT architectures are preferable in low duty
cycle and noisy applications. However, traditional COT
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DS2855A/B-01
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RT2855A/B
control schemes suffer from some disadvantages that
preclude their use in many cases. Many applications require
a known switching frequency range to avoid interference
with other sensitive circuitry. True constant on-time control,
where the on-time is actually fixed, exhibits variable
switching frequency. In a step-down converter, the duty
factor is proportional to the output voltage and inversely
proportional to the input voltage. Therefore, if the on-time
is fixed, the off-time (and therefore the frequency) must
change in response to changes in input or output voltage.
Modern pseudo-fixed frequency COT architectures greatly
improve COT by making the one-shot on-time proportional
to VOUT and inversely proportional to VIN. In this way, an
on-time is chosen as approximately what it would be for
an ideal fixed-frequency PWM in similar input/output
voltage conditions. The result is a big improvement but
the switching frequency still varies considerably over line
and load due to losses in the switches and inductor and
other parasitic effects.
Another problem with many COT architectures is their
dependence on adequate ESR in the output capacitor,
making it difficult to use highly-desirable, small, low-cost,
but low-ESR ceramic capacitors. Most COT architectures
use AC current information from the output capacitor,
generated by the inductor current passing through the
ESR, to function in a way like a current mode control
system. With ceramic capacitors the inductor current
information is too small to keep the control loop stable,
like a current mode system with no current information.
ACOTTM Control Architecture
Making the on-time proportional to VOUT and inversely
proportional to VIN is not sufficient to achieve good
constant-frequency behavior for several reasons. First,
voltage drops across the MOSFET switches and inductor
cause the effective input voltage to be less than the
measured input voltage and the effective output voltage to
be greater than the measured output voltage. As the load
changes, the switch voltage drops change causing a
switching frequency variation with load current. Also, at
light loads if the inductor current goes negative, the switch
dead-time between the synchronous rectifier turn-off and
the high-side switch turn-on allows the switching node to
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DS2855A/B-01
September 2015
rise to the input voltage. This increases the effective ontime and causes the switching frequency to drop
noticeably.
One way to reduce these effects is to measure the actual
switching frequency and compare it to the desired range.
This has the added benefit eliminating the need to sense
the actual output voltage, potentially saving one pin
connection. ACOTTM uses this method, measuring the
actual switching frequency (at SW) and modifying the ontime with a feedback loop to keep the average switching
frequency in the desired range.
To achieve good stability with low-ESR ceramic capacitors,
ACOTTM uses a virtual inductor current ramp generated
inside the IC. This internal ramp signal replaces the ESR
ramp normally provided by the output capacitor's ESR.
The ramp signal and other internal compensations are
optimized for low-ESR ceramic output capacitors.
ACOTTM One-shot Operation
The RT2855A/B control algorithm is simple to understand.
The feedback voltage, with the virtual inductor current ramp
added, is compared to the reference voltage. When the
combined signal is less than the reference the on-time
one-shot is triggered, as long as the minimum off-time
one-shot is clear and the measured inductor current
(through the synchronous rectifier) is below the current
limit. The on-time one-shot turns on the high-side switch
and the inductor current ramps up linearly. After the ontime, the high-side switch is turned off and the synchronous
rectifier is turned on and the inductor current ramps down
linearly. At the same time, the minimum off-time one-shot
is triggered to prevent another immediate on-time during
the noisy switching time and allow the feedback voltage
and current sense signals to settle. The minimum off-time
is kept short (260ns typical) so that rapidly-repeated ontimes can raise the inductor current quickly when needed.
Discontinuous Operating Mode (RT2855A Only)
After soft start, the RT2855B operates in fixed frequency
mode to minimize interference and noise problems. The
RT2855A uses variable-frequency discontinuous switching
at light loads to improve efficiency. During discontinuous
switching, the on-time is immediately increased to add
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RT2855A/B
“hysteresis” to discourage the IC from switching back to
continuous switching unless the load increases
substantially.
The IC returns to continuous switching as soon as an ontime is generated before the inductor current reaches zero.
The on-time is reduced back to the length needed for
650kHz switching and encouraging the circuit to remain
in continuous conduction, preventing repetitive mode
transitions between continuous switching and
discontinuous switching.
Current Limit
The RT2855A/B current limit is a cycle-by-cycle “valley”
type, measuring the inductor current through the
synchronous rectifier during the off-time while the inductor
current ramps down. The current is determined by
measuring the voltage between source and drain of the
synchronous rectifier, adding temperature compensation
for greater accuracy. If the current exceeds the upper
current limit, the on-time one-shot is inhibited until the
inductor current ramps down below the upper current limit
plus a wide hysteresis band of about 1A until it drops
below the lower current limit level. Thus, only when the
inductor current is well below the upper current limit is
another on-time permitted. This arrangement prevents the
average output current from greatly exceeding the
guaranteed upper current limit value, as typically occurs
with other valley-type current limits. If the output current
exceeds the available inductor current (controlled by the
current limit mechanism), the output voltage will drop. If it
drops below the output under-voltage protection level (see
next section) the IC will stop switching to avoid excessive
heat.
The RT2855B also includes a negative current limit to
protect the IC against sinking excessive current and
possibly damaging the IC. If the voltage across the
synchronous rectifier indicates the negative current is too
high, the synchronous rectifier turns off until after the next
high-side on-time. The RT2855A does not sink current
and therefore does not need a negative current limit.
Hiccup Mode
The RT2855AHGQW/ RT2855BHGQW, use hiccup mode
OVP and UVP. When the protection function is triggered,
the IC will shut down for a period of time and then attempt
to recover automatically. Hiccup mode allows the circuit
to operate safely with low input current and power
dissipation, and then resume normal operation as soon
as the overload or short circuit is removed. During hiccup
mode, the shutdown time is determined by the capacitor
at SS. A 0.5μA current source discharges VSS from its
starting voltage (normally VREG5). The IC remains shut
down until VSS reaches 0.2V, about 38ms for a 3.9nF
capacitor. At that point the IC begins to charge the SS
capacitor by 6μA, and a normal start-up occurs. If the
fault remains, OVP and UVP protection will be enabled
when VSS reaches 2.2V (typical). The IC will then shut
down and discharge the SS capacitor from the 2.2V level,
taking about 16ms for a 3.9nF SS capacitor.
Latch-Off Mode
The RT2855ALGQW/ RT2855BLGQW, use latch-off mode
OVP and UVP. When the protection function is triggered
the IC will shut down. The IC stops switching, leaving
both switches open, and is latched off. To restart operation,
toggle EN or power the IC off and then on again.
Input Under-voltage Lock-out
In addition to the enable function, the RT2855A/B feature
an under-voltage lock-out (UVLO) function that monitors
the internal linear regulator output (VREG5). To prevent
operation without fully-enhanced internal MOSFET
switches, this function inhibits switching when VREG5
drops below the UVLO-falling threshold. The IC resumes
switching when VREG5 exceeds the UVLO-rising
threshold.
Shut-down, Start-up and Enable (EN)
The enable input (EN) has a logic-low level of 0.4V. When
VEN is below this level the IC enters shutdown mode and
supply current drops to less than 10μA. When VEN exceeds
its logic-high level of 2V the IC is fully operational.
EN is a high voltage input that can be safely connected to
VIN (up to 18V) for automatic start-up.
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RT2855A/B
Soft-Start (SS)
Over Temperature Protection
The RT2855A/B soft-start uses an external pin (SS) to
clamp the output voltage and allow it to slowly rise. After
VEN is high and VREG5 exceeds its UVLO threshold, the
IC begins to source 6μA from the SS pin. An external
capacitor at SS is used to adjust the soft-start timing.
The available capacitance range is from 2.7nF to 220nF.
Do not leave SS unconnected.
The RT2855A/B includes an over temperature protection
(OTP) circuitry to prevent overheating due to excessive
power dissipation. The OTP will shut down switching
operation when the junction temperature exceeds 150°C.
Once the junction temperature cools down by
approximately 20°C the IC will resume normal operation
with a complete soft-start. For continuous operation,
provide adequate cooling so that the junction temperature
does not exceed 150°C.
During start-up, while the SS capacitor charges, the
RT2855A/B operate in discontinuous mode with very small
pulses. This prevents negative inductor currents and keeps
the circuit from sinking current. Therefore, the output
voltage may be pre-biased to some positive level before
start-up. Once the VSS ramp charges enough to raise the
internal reference above the feedback voltage, switching
will begin and the output voltage will smoothly rise from
the pre-biased level to its regulated level. After VSS rises
above about 2.2V output over-and under-voltage protections
are enabled and the RT2855B begins continuous-switching
operation.
An internal linear regulator (VREG5) produces a 5.1V
supply from VIN that powers the internal gate drivers, PWM
logic, reference, analog circuitry, and other blocks. If VIN
is 6V or greater, VREG5 is guaranteed to provide significant
power for external loads.
PGOOD Comparator
Output Discharge Control
When EN pin is low, the RT2855A/B will discharge the
output with an internal 50Ω MOSFET connected between
VOUT to GND pin.
OVP/UVP Protection
The RT2855A/B detects over and under voltage conditions
by monitoring the feedback voltage on FB pin. The two
functions are enabled after approximately 1.7 times the
soft-start time. When the feedback voltage becomes
higher than 120% of the target voltage, the OVP
comparator will go high to turn off both internal high side
and low side MOSFETs. When the feedback voltage is
lower than 70% of the target voltage for 250μs, the UVP
comparator will go high to turn off both internal high side
and low side MOSFETs.
PGOOD is an open drain output controlled by a comparator
connected to the feedback signal. If FB exceeds 90% of
the internal reference voltage, PGOOD will be high
impedance. Otherwise, the PGOOD output is connected
to PGND.
External Bootstrap Capacitor
Connect a 0.1μF low ESR ceramic capacitor between
BOOT and SW. This bootstrap capacitor provides the gate
driver supply voltage for the high side N-channel MOSFET
switch.
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September 2015
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7
RT2855A/B
Absolute Maximum Ratings











(Note 1)
Supply Voltage, VIN, VCC ---------------------------------------------------------------------------------------Switch Voltage, SW -----------------------------------------------------------------------------------------------< 10ns ----------------------------------------------------------------------------------------------------------------BOOT to SW --------------------------------------------------------------------------------------------------------VREG5 to VIN or VCC --------------------------------------------------------------------------------------------EN, VS Pin ----------------------------------------------------------------------------------------------------------Other Pins Voltage -------------------------------------------------------------------------------------------------Power Dissipation, PD @ TA = 25°C
WQFN-16L 3x3 -----------------------------------------------------------------------------------------------------Package Thermal Resistance (Note 2)
WQFN-16L 3x3, θJA ------------------------------------------------------------------------------------------------WQFN-16L 3x3, θJC -----------------------------------------------------------------------------------------------Junction Temperature Range -------------------------------------------------------------------------------------Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------Storage Temperature Range --------------------------------------------------------------------------------------
Recommended Operating Conditions



−0.3V to 20V
−0.3V to (VIN + 0.3V)
−5V to 25V
−0.3V to 6V
−17V to 0.3V
−0.3V to 20V
−0.3V to 6V
2.1W
47.4°C/W
7.5°C/W
150°C
260°C
−65°C to 150°C
(Note 3)
Supply Voltage, VIN ------------------------------------------------------------------------------------------------ 4.5V to 18V
Junction Temperature Range -------------------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range -------------------------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VIN = 12V, TA = −40°C to 85°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Supply Current
Shutdown Current
ISHDN
TA = 25C, VEN = 0V
--
1
10
A
Quiescent Current
IQ
TA = 25C, VEN = 5V, VFB = 0.8V
--
1
1.3
mA
Logic-High
2
--
18
Logic-Low
--
--
0.4
Logic Threshold
EN Voltage
V
VFB Voltage and Discharge Resistance
TA = 25C
0.757
TA = 40C to 85C
0.755
--
0.775
VFB = 0.8V, TA = 25C
--
0.01
0.1
A
RDIS
VEN = 0V, VS = 0.5V
--
50
100

VREG5
TA = 25C, 6V  VIN  18V,
0 < IVREG5  5mA
4.8
5.1
5.4
V
Feedback Threshold Voltage
VFB
Feedback Input Current
IFB
VOUT Discharge Resistance
0.765 0.773
V
VREG5 Output
VREG5 Output Voltage
Line Regulation
6V  VIN  18V, IVREG5 = 5mA
--
--
20
mV
Load Regulation
0  IVREG5  5mA
--
--
100
mV
VIN = 6V, VREG5 = 4V, TA = 25C
70
85
--
mA
Output Current
IVREG5
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September 2015
RT2855A/B
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
RDS(ON)
Switch On
Resistance
High Side
RDS(ON)_H
TA = 25C (VBOOT  VSW ) = 5.5V
--
70
--
Low Side
RDS(ON)_L
TA = 25C
--
30
--
5
6
7
--
150
--
--
20
--
m
Current Limit
Current Limit
ILIM
A
Thermal Shutdown
Thermal Shutdown Threshold
TSD
Shutdown Temperature
Thermal Shutdown Hysteresis TSD
C
On-Time Timer Control
On-Time
tON
VIN = 12V, VOUT = 1.05V
--
135
--
ns
Minimum Off-Time
tOFF(MIN)
VFB = 0.7V, TA = 25C
--
260
310
ns
VSS = 0V
5
6
7.5
A
VSS = 0.5V (Latch Mode)
0.1
0.2
--
mA
VSS = 0.5V (Hiccup Mode)
--
0.5
--
A
3.6
3.85
4.1
0.18
0.35
0.47
VFB Rising
85
90
95
VFB Falling
--
85
--
2.5
5
--
mA
114
120
126
%
OVP Prop Delay
--
5
--
s
UVP Trip Threshold
65
70
75
UVP Hysteresis
--
10
--
UVP Prop Delay
--
250
--
s
--
tSS
x 1.7
--
ms
Soft-Start
SS Charge Current
SS Discharge Current
UVLO
UVLO Threshold
Wake Up VREG5
Hysteresis
V
Power Good
PGOOD Threshold
PGOOD Sink Current
PGOOD = 0.5V
%
Output Under Voltage and Over Voltage Protection
OVP Trip Threshold
UVP Enable Delay
OVP Detect
tUVPEN
Relative to Soft-Start Time
%
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. The device is not guaranteed to function outside its operating conditions.
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September 2015
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RT2855A/B
Typical Application Circuit
RT2855A/B
VIN
13, 14
C1
10µF x 2
C2
0.1µF
15
VIN
VCC
Output Signal
VREG5
SW
BOOT
VS
R3 100k
5 PGOOD
6 EN
Input Signal
C5
3.3nF
L1
1.4µH
9, 10, 11
C6
0.1µF
12
VOUT
1.05V/4A
C3
R1
8.25k
16
C7
22µF x 2
FB 1
R2
22.1k
VREG5 2
VREG5
C4
3 SS
1µF
GND PGND
4
7, 8, 17 (Exposed Pad)
Table 1. Suggested Component Values (VIN = 12V)
VOUT (V)
R1 (k)
R2 (k)
C3 (pF)
L1 (H)
C7 (F)
1
6.81
22.1
--
1.4
22 to 68
1.05
8.25
22.1
--
1.4
22 to 68
1.2
12.7
22.1
--
1.4
22 to 68
1.8
30.1
22.1
5 to 22
2
22 to 68
2.5
49.9
22.1
5 to 22
2
22 to 68
3.3
73.2
22.1
5 to 22
2
22 to 68
5
124
22.1
5 to 22
3.3
22 to 68
7
180
22.1
5 to 22
3.3
22 to 68
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is a registered trademark of Richtek Technology Corporation.
DS2855A/B-01
September 2015
RT2855A/B
Typical Operating Characteristics
Output Voltage vs. Output Current
Efficiency vs. Output Current
1.10
90
1.09
80
1.08
Efficiency (%)
70
Output Voltage (V)
100
VIN = 5V
VIN = 12V
VIN = 18V
60
50
40
30
1.07
1.06
1.05
VIN = 18V
VIN = 12V
VIN = 5V
1.04
1.03
1.02
20
10
1.01
RT2855A, VOUT = 1.05V
0
0.001
0.01
0.1
1
VOUT = 1.05V
1.00
0.0
10
0.4
0.8
1.2
Output Current (A)
Feedback Voltage (V)
Feedback Voltage (V)
2.8
3.2
3.6
4.0
VIN = 12V, VOUT = 0.765V, IOUT = 0.6A
0.775
0.78
0.77
0.76
0.75
0.74
0.73
0.72
0.770
0.765
0.760
0.755
0.750
0.745
0.71
0.740
0.70
-50
-25
0
25
50
75
100
4
125
6
8
Shutdown Current vs. Temperature
30
10
12
14
16
18
Input Voltage (V)
Temperature (°C)
Quiescent Current vs. Temperature
1000
VIN = 12V, VOUT = 1.05V, IOUT = 0A
VIN = 12V, VOUT = 1.05V, IOUT = 0A
950
25
Quiescent Current (µA)
Shutdown Current (µA)1
2.4
Feedback Voltage vs. Input Voltage
0.780
VIN = 12V, VOUT = 0.765V, IOUT = 0.6A
0.79
2.0
Output Current (A)
Feedback Voltage vs. Temperature
0.80
1.6
20
15
10
5
900
850
800
750
700
650
0
600
-50
-25
0
25
50
75
100
Temperature (°C)
Copyright © 2015 Richtek Technology Corporation. All rights reserved.
DS2855A/B-01
September 2015
125
-50
-25
0
25
50
75
100
125
Temperature (°C)
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RT2855A/B
Current Limit vs. Input Voltage
7.0
Output Ripple Voltage
VIN = 12V, VOUT = 1.05V
Current Limit (A)
6.5
VIN = 12V, VOUT = 1.05V, IOUT = 4A
VOUT
(10mV/Div)
6.0
Upper Threshold
5.5
5.0
Lower Threshold
4.5
4.0
VSW
(5V/Div)
3.5
3.0
4
6
8
10
12
14
16
18
Time (500ns/Div)
Input Voltage (V)
Load Transient Response
Load Transient Response
RT2855A
RT2855B
VOUT
(50mV/Div)
VOUT
(50mV/Div)
IOUT
(1A/Div)
IOUT
(1A/Div)
VIN = 12V, VOUT = 1.05V, IOUT = 0A to 3A
Time (100μs/Div)
VIN = 12V, VOUT = 1.05V, IOUT = 0A to 3A
Time (100μs/Div)
Pre Short
RT2855A/B
PGOOD
(5V/Div)
VOUT
(400mV/Div)
ILX
(2A/Div)
Time (200μs/Div)
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is a registered trademark of Richtek Technology Corporation.
DS2855A/B-01
September 2015
RT2855A/B
Applications Information
REN
100k
Soft-Start (SS)
VIN
The RT2855A/B soft-start uses an external capacitor at
SS to adjust the soft-start timing according to the following
equation :
C
(nF)  0.765V
tSS (ms) = SS
ISS (μA)
The soft-start timing is the output voltage rising time from
0V to settled level and can be programmed by the external
capacitor between the SS and GND pins. The available
capacitance range is from 2.7nF to 220nF. If a 3.9nF
capacitor is used, the typical soft-start will be 0.5ms. Do
not leave SS unconnected.
For automatic start-up the high-voltage EN pin can be
connected to VIN, either directly or through a 100kΩ
resistor. Its large hysteresis band makes EN useful for
simple delay and timing circuits. EN can be externally
pulled to VIN by adding a resistor-capacitor delay (REN
and CEN in Figure 1). Calculate the delay time using EN's
internal threshold where switching operation begins (1.4V,
typical).
An external MOSFET can be added to implement digital
control of EN when no system voltage above 2V is available
(Figure 2). In this case, a 100kΩ pull-up resistor, REN, is
connected between VIN and the EN pin. MOSFET Q1 will
be under logic control to pull down the EN pin. To prevent
enabling circuit when VIN is smaller than the VOUT target
value or some other desired voltage level, a resistive voltage
divider can be placed between the input voltage and ground
and connected to EN to create an additional input undervoltage lockout threshold (Figure 3).
EN
REN
CEN
EN
RT2855A/B
GND
Figure 1. External Timing Control
Copyright © 2015 Richtek Technology Corporation. All rights reserved.
DS2855A/B-01
Q1
Enable
RT2855A/B
GND
Figure 2. Digital Enable Control Circuit
REN1
VIN
EN
REN2
RT2855A/B
GND
Figure 3. Resistor Divider for Lockout Threshold Setting
Enable Operation (EN)
VIN
EN
September 2015
Output Voltage Setting
Set the desired output voltage using a resistive divider
from the output to ground with the midpoint connected to
FB. The output voltage is set according to the following
equation :
R1
VOUT = 0.765  (1
)
R2
VOUT
R1
FB
RT2855A/B
R2
GND
Figure 4. Output Voltage Setting
Place the FB resistors within 5mm of the FB pin. Choose
R2 between 10kΩ and 100kΩ to minimize power
consumption without excessive noise pick-up and
calculate R1 as follows :
R2  (VOUT  0.765V)
0.765V
For output voltage accuracy, use divider resistors with 1%
R1 =
or better tolerance.
Under-Voltage Lockout Protection
The RT2855A/B feature an under-voltage lock-out (UVLO)
function that monitors the internal linear regulator output
(PVCC) and prevents operation if VPVCC is too low. In some
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13
RT2855A/B
External BOOT Bootstrap Diode
When the input voltage is lower than 5.5V it is
recommended to add an external bootstrap diode between
VIN (or VINR) and the BOOT pin to improve enhancement
of the internal MOSFET switch and improve efficiency.
The bootstrap diode can be a low cost one such as 1N4148
or BAT54.
5V
BOOT
RT2855A/B
0.1µF
SW
Figure 5. External Bootstrap Diode
External BOOT Capacitor Series Resistance
The internal power MOSFET switch gate driver is
optimized to turn the switch on fast enough for low power
loss and good efficiency, but also slow enough to reduce
EMI. Switch turn-on is when most EMI occurs since VSW
rises rapidly. During switch turn-off, SW is discharged
relatively slowly by the inductor current during the deadtime between high-side and low-side switch on-times.
In some cases it is desirable to reduce EMI further, at the
expense of some additional power dissipation. The switch
turn-on can be slowed by placing a small (<10Ω)
resistance between BOOT and the external bootstrap
capacitor. This will slow the high-side switch turn-on and
VSW's rise. To remove the resistor from the capacitor
charging path (avoiding poor enhancement due to undercharging the BOOT capacitor), use the external diode
shown in Figure 5 to charge the BOOT capacitor and place
the resistance between BOOT and the capacitor/diode
connection.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
For recommended operating condition specifications, the
maximum junction temperature is 125°C. The junction to
ambient thermal resistance, θJA, is layout dependent. For
WQFN-16L 3x3 package, the thermal resistance, θJA, is
47.4°C/W on a standard JEDEC 51-7 four-layer thermal
test board. The maximum power dissipation at TA = 25°C
can be calculated by the following formula :
PD(MAX) = (125°C − 25°C) / (47.4°C/W) = 2.1W for
WQFN-16L 3x3 package
The maximum power dissipation depends on the operating
ambient temperature for fixed T J(MAX) and thermal
resistance, θJA. The derating curve in Figure 6 allows the
designer to see the effect of rising ambient temperature
on the maximum power dissipation.
2.5
Maximum Power Dissipation (W)1
multiple input voltage applications, it may be desirable to
use a power input that is too low to allow VPVCC to exceed
the UVLO threshold.
Four-Layer PCB
2.0
1.5
1.0
0.5
0.0
0
PVCC Capacitor Selection
Decouple PVCC to PGND with a 1μF ceramic capacitor.
High grade dielectric (X7R, or X5R) ceramic capacitors
are recommended for their stable temperature and bias
voltage characteristics.
Copyright © 2015 Richtek Technology Corporation. All rights reserved.
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25
50
75
100
125
Ambient Temperature (°C)
Figure 6. Derating Curve of Maximum Power Dissipation
is a registered trademark of Richtek Technology Corporation.
DS2855A/B-01
September 2015
RT2855A/B
Layout Considerations

Connect the feedback network to the output capacitors
rather than the inductor. Place the feedback components
near the FB pin.

The exposed pad, PGND, and GND should be connected
to large copper areas for heat sinking and noise
protection. Provide dedicated wide copper traces for the
power path ground between the IC and the input and
output capacitor grounds, rather than connecting each
of these individually to an internal ground plane.

Avoid using vias in the power path connections that have
switched currents (from CIN to PGND and CIN to VIN)
and the switching node (SW).
Follow the PCB layout guidelines for optimal performance
of the RT2855A/B.

Keep the traces of the main current paths as short and
wide as possible.

Put the input capacitor as close as possible to the device
pins (VIN and PGND).

The high-frequency switching node (SW) has large
voltage swings and fast edges and can easily radiate
noise to adjacent components. Keep its area small to
prevent excessive EMI, while providing wide copper
traces to minimize parasitic resistance and inductance.
Keep sensitive components away from the SW node or
provide ground traces between for shielding, to prevent
stray capacitive noise pickup.
Place the feedback components as close Place the input capacitors as
to the FB as possible for better regulation. close to the IC as possible.
VS
VCC
VIN
VIN
VOUT
R1
R2
PGND
16 15 14 13
FB
VREG5
SS
GND
CSS
1
12
2
11
GND
3
10
17
4
5
6
7
9
BOOT
SW
SW
SW
CBOOT
8
PGOOD
EN
PGND
PGND
CREG5
CIN
L
COUT
VOUT
SW should be connected
to inductor by wide and
short trace. Keep sensitive
components away from this
trace.
Place the output capacitors as
close to the IC as possible.
Figure 7. PCB Layout Guide
Copyright © 2015 Richtek Technology Corporation. All rights reserved.
DS2855A/B-01
September 2015
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
15
RT2855A/B
Outline Dimension
D
SEE DETAIL A
D2
L
1
E
E2
e
b
A
A1
1
1
2
2
DETAIL A
Pin #1 ID and Tie Bar Mark Options
A3
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.180
0.300
0.007
0.012
D
2.950
3.050
0.116
0.120
D2
1.300
1.750
0.051
0.069
E
2.950
3.050
0.116
0.120
E2
1.300
1.750
0.051
0.069
e
L
0.500
0.350
0.020
0.450
0.014
0.018
W-Type 16L QFN 3x3 Package
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
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DS2855A/B-01
September 2015