AOTF450L 200V, 5.8A N-Channel MOSFET General Description Product Summary The AOTF450L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 250V@150℃ ID (at VGS=10V) 5.8A RDS(ON) (at VGS=10V) < 0.7Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF450L Top View D TO-220F G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Units V ±30 V 5.8* ID 4.1* A IDM 12 IAR 1.9 A EAR 54 mJ EAS dv/dt 108 5 27 mJ V/ns W 0.18 -55 to 175 W/ oC °C 300 °C Max 65 5.6 Units °C/W °C/W PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: Jun 2011 Max 200 www.aosmd.com Page 1 of 5 AOTF450L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 200 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 250 V ID=250µA, VGS=0V 0.25 V/ oC VDS=200V, VGS=0V 1 VDS=160V, TJ=125°C 10 µA Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current 5.8 A ISM Maximum Body-Diode Pulsed Current 12 A 4.5 nΑ V VGS=10V, ID=2.9A 0.57 0.7 Ω VDS=40V, ID=2.9A 3.4 IS=1A,VGS=0V 0.78 1 V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 4.2 VGS=0V, VDS=25V, f=1MHz 3.6 S 150 194 235 pF 25 40 55 pF 3.3 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge pF 1.8 3.6 5.4 Ω 2.8 3.6 4.4 nC VGS=10V, VDS=160V, ID=5.8A Qgs Gate Source Charge 1.7 nC Qgd tD(on) Gate Drain Charge 0.6 nC Turn-On DelayTime 11 tr Turn-On Rise Time ns 20 tD(off) Turn-Off DelayTime ns 13 tf trr Turn-Off Fall Time ns 8 Body Diode Reverse Recovery Time IF=5.8A,dI/dt=100A/µs,VDS=100V 95 ns 121 150 Qrr Body Diode Reverse Recovery Charge IF=5.8A,dI/dt=100A/µs,VDS=100V 0.40 0.51 0.62 VGS=10V, VDS=100V, ID=5.8A, RG=25Ω ns µC A. The value of R θJA is measured with the device in a still air environment with TA =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C, Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=1.9A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Jun 2011 www.aosmd.com Page 2 of 5 AOTF450L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 12 VDS=40V 10 10V -55°C 10 ID(A) ID (A) 8 6 6.5V 125°C 4 1 6V 25°C 2 VGS=5.5V 0 0.1 0 5 10 15 20 25 VDS (Volts) Fig 1: On-Region Characteristics 30 2 1.0 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 Normalized On-Resistance 4 VGS=10V 0.8 RDS(ON) (Ω ) 4 0.6 0.4 0.2 3.5 VGS=10V ID=2.9A 3 2.5 2 1.5 1 0.5 0.0 0 0 2 4 6 8 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+02 1.0E+01 1.1 40 1.0E+00 IS (A) BVDSS (Normalized) -50 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 1.0E-04 0.8 -100 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev0: Jun 2011 -50 0 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOTF450L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 15 Capacitance (pF) VGS (Volts) Ciss VDS=160V ID=5.8A 12 100 9 6 Coss Crss 10 3 1 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 6 8 100 6 10 ID (Amps) Current rating ID(A) 0 4 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 10µs RDS(ON) limited 100µs 1ms 1 10ms DC 0.1s 0.1 2 1s TJ(Max)=175°C TC=25°C 0 0.01 0 25 50 75 100 125 150 TCASE (°C) Figure 9: Current De-rating (Note B) 175 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF450L (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 Single Pulse 0.001 0.000001 Rev0: Jun 2011 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF450L (Note F) www.aosmd.com 100 Page 4 of 5 AOTF450L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + DUT Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: Jun 2011 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 5 of 5