Datasheet

AOK18N65
650V,18A N-Channel MOSFET
General Description
Product Summary
The AOK18N65 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
750V@150℃
18A
RDS(ON) (at VGS=10V)
< 0.39Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOK18N65L
Top View
TO-247
D
G
S
G
D
S
AOK18N65
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOK18N65
650
Units
V
±30
V
18
12
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
6.3
A
Repetitive avalanche energy C
EAR
595
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
EAS
dv/dt
1190
5
417
mJ
V/ns
W
3.3
-55 to 150
W/ oC
°C
300
°C
AOK18N65
40
0.5
0.3
Units
°C/W
°C/W
°C/W
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev0: Dec 2011
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
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80
Page 1 of 5
AOK18N65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
650
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
750
ID=250µA, VGS=0V
0.7
V
V/ oC
VDS=650V, VGS=0V
1
VDS=520V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100
2.9
µA
3.5
4.5
nΑ
V
0.39
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=9A
0.32
gFS
Forward Transconductance
VDS=40V, ID=9A
20
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current*
18
A
ISM
Maximum Body-Diode Pulsed Current
80
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
2270
3027
3785
pF
VGS=0V, VDS=25V, f=1MHz
170
271
370
pF
12
22
32
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.4
2.1
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=520V, ID=18A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=18A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
S
0.69
44
56
68
nC
9
12.4
15
nC
9
19.6
30
nC
VGS=10V, VDS=325V, ID=18A,
RG=25Ω
54
ns
83
ns
149
ns
71
IF=18A,dI/dt=100A/µs,VDS=100V
ns
520
655
790
8
10
12
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6.3A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec 2011
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Page 2 of 5
AOK18N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
40
-55°C
VDS=40V
10V
30
6V
ID(A)
ID (A)
10
20
125°C
5.5V
1
10
VGS=5V
25°C
0
0
5
10
15
20
25
0.1
30
0
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
3
0.5
Normalized On-Resistance
0.6
RDS(ON) (Ω)
4
VGS(Volts)
Figure 2: Transfer Characteristics
VGS=10V
0.4
0.3
2
1.5
1
0.5
0
-100
0.2
0
10
20
30
VGS=10V
ID=9A
2.5
40
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
1.0E-02
25°C
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev0: Dec 2011
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOK18N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Ciss
VDS=520V
ID=18A
Capacitance (pF)
VGS (Volts)
12
9
6
1000
Coss
Crss
100
3
0
10
0
20
40
60
80
100
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
100
15
10µs
10
ID (Amps)
Current rating ID(A)
RDS(ON)
limited
10
5
100µs
1ms
1
10ms
DC
0.1
TJ(Max)=150°C
TC=25°C
0
0.01
0
25
50
75
100
125
150
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOK18N65 (Note F)
TCASE (°C)
Figure 9: Current De-rating (Note B)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOK18N65 (Note F)
Rev0: Dec 2011
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Page 4 of 5
AOK18N65
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: Dec 2011
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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