AOK60N30 300V,60A N-Channel MOSFET General Description Product Summary The AOK60N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 350@150℃ 60A RDS(ON) (at VGS=10V) < 0.056Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK60N30L Top View D TO-247 G S G S D AOK60N30 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOK60N30 300 Units V ±30 V 60 40 A Pulsed Drain Current C IDM Avalanche Current C IAR 9.5 A Repetitive avalanche energy C EAR 1353 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case EAS dv/dt 2707 5 658 mJ V/ns W 5.3 -55 to 150 W/ oC °C 300 °C AOK60N30 40 0.5 0.19 Units °C/W °C/W °C/W Rev0: May 2012 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com 200 Page 1 of 5 AOK60N30 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 300 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 350 V ID=250µA, VGS=0V 0.26 V/ oC VDS=300V, VGS=0V 1 VDS=240V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A gFS Forward Transconductance VDS=40V, ID=30A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.5 4.1 nΑ V 0.042 0.056 Ω 1 V Maximum Body-Diode Continuous Current 60 A Maximum Body-Diode Pulsed Current 200 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge 52 S 0.68 3550 4438 5330 pF VGS=0V, VDS=25V, f=1MHz 410 593 770 pF 22 38 54 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.7 2.6 Ω 70 88 106 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs 2.9 VGS=10V, VDS=240V, ID=60A 21 nC 28 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=60A,dI/dt=100A/µs,VDS=100V 250 320 390 Qrr Body Diode Reverse Recovery Charge IF=60A,dI/dt=100A/µs,VDS=100V 11 14.5 18 Body Diode Reverse Recovery Time VGS=10V, VDS=150V, ID=60A, RG=25Ω 88 ns 222 ns 224 ns 132 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=9.5A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: May 2012 www.aosmd.com Page 2 of 5 AOK60N30 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 140 VDS=40V 10V 7V 120 -55°C 100 100 60 ID(A) ID (A) 6.5V 80 6V 125°C 10 25°C 40 1 5.5V 20 VGS=5V 0 0 5 10 15 20 25 0.1 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 8 10 3 Normalized On-Resistance 0.10 0.08 RDS(ON) (Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics VGS=10V 0.06 0.04 0.02 0.00 0 20 40 60 80 100 2.5 2 VGS=10V ID=30A 1.5 1 0.5 0 -100 120 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev0: May 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOK60N30 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Ciss VDS=240V ID=60A Capacitance (pF) VGS (Volts) 12 9 6 Coss 1000 Crss 100 3 0 10 0 30 60 90 120 150 0.1 1 1000 60 100 45 30 15 0 50 75 100 125 150 10µs RDS(ON) limited 100µs 1ms 10ms 100ms DC 1 0.1 25 100 10 ID (Amps) Current rating ID(A) 75 0 10 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TC=25°C 0.01 1 TCASE (°C) Figure 9: Current De-rating (Note B) 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOK60N30 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.19°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOK60N30 (Note F) Rev0: May 2012 www.aosmd.com Page 4 of 5 AOK60N30 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: May 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 5 of 5