AOS Semiconductor Product Reliability Report AOD406 / AOD406L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com September 20, 2004 1 This AOS product reliability report summarizes the qualification result for AOD406/AOD406L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOD406/AOD406L passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: AOD406 / AOD406L, a n channel MOSFET, is ideally suited for used as a low side switch in CPU core power conversion. The device uses the advanced trench technology to provide excellent Rdson, shoot-through immunity and body diode characteristics. Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V TA=25°C Continuous Drain A Current TA=100°C Pulsed Drain Current B Power Dissipation Junction and Storage Temperature Range ID TA=70°C Thermal Characteristics Parameter Maximum Junction-toAmbient Maximum Junction-toAmbient Maximum Junction-to-Lead 200 100 PD W 50 TJ , TSTG -55 to 175 Symbol t = 10s SteadyState SteadyState A 75 IDM TA=25°C A 85 RθJA RθJL °C Typ Max Units 14.2 20 °C/W 40 50 °C/W 0.8 1.5 °C/W 2 II. Die / Package Information: Die Size Process Package Type Lead Frame Die Attach Bondwire Mold Material Filler % (Spherical/Flake) Flammability Rating Backside Metallization Moisture Level AOD406 140 X 83 mils Standard sub-micron low voltage N channel process 3 lead TO252 Copper with Solder Plate Silver-filled Epoxy 5 & 8 mils Al wire Epoxy resin with silica filler 50/50 UL-94 V-0 Ti / N / Ag Up to Level 1 * AOD406L (Green Compound) 140 X83 mils Standard sub-micron low voltage N channel process 3 lead TO252 Copper with Solder Plate Silver-filled Epoxy 5 & 8 mils Al wire Epoxy resin with silica filler 100/0 UL-94 V-0 Ti / N / Ag Up to Level 1* Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AOD406 (Standard) & AOD406L (Green) Test Item HTGB Test Condition Temp = 150 C, Vgs=100% of Vgsmax Time Point Lot Attribution Total Sample size 168 / 500 hrs AOD406: 4 lots 328 pcs 0 (note A*) 1000 hrs HTRB Temp = 150 C, Vds=80% of Vdsmax 168 / 500 hrs 1000 hrs HAST Pressure Pot Temperature Cycle 130 +/- 2 C, 85%, 33.3 psi, Vgs = 80% of Vgs max 121 C, 15+/-1 PSIG, RH=100% -65 to 150 deg C, air to air, 0.5hr per cycle Number of Failures 100 hrs 96 hrs 250 / 500 cycles 77+5 pcs / lot AOD406: 3 lots 246 pcs 0 (note A*) Standard compound: 1 lot Green compound: 3 lots (note B**) Standard compound: 1 lot Green compound: 3 lots ** (note B**) Standard compound: 1 lot Green compound: 3 lots ** (note B**) 77+5 pcs / lot 220 pcs (3 lots) 0 50+5 pcs / lot 220 pcs (3 lots) 1 50+5 pcs / lot 220 pcs (3 lots) 0 50+5 pcs / lot 3 III. Result of Reliability Stress for AOD406 (Standard) & AOD406L (Green), Cotinues Internal Vision Cross-section X-ray DPA CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°C bake 150°C bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 230°C 5 sec 15 15 leads 0 0hr 10 10 0 3500V 10 pcs each from AOD406 and AOD406L Die Shear ESD Rating Human Body Mode MIL-STD 883D Method 3025.7 20 pcs 0 Note A: The HTGB and HTRB reliability data presents total of available AOD406 and AOD406L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AOD406L comes from the AOS generic green compound package qualification data. IV. Reliability Evaluation FIT rate (per billion): 36.3 MTBF = 3144 years 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO3401). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (574) (168) (258.24)] = 36.3 9 MTBF = 10 / 36.3 = 27548209 hours = 3144 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C) V. Quality Assurance Information 4 Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D Contacts: Jackey Wang Fred Chang, Wilson Ma, Engineer of Failure Analysis and Reliability [email protected] Manager of Failure Analysis and Reliability [email protected] Senior Director of Quality Assurance [email protected] 5