AON7524 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application VDS 30V 28A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3.3mΩ RDS(ON) (at VGS=4.5V) < 4mΩ RDS(ON) (at VGS=2.5V) < 5.8mΩ Typical ESD protection HBM Class 3B 100% UIS Tested 100% Rg Tested • DC/DC Converters DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 112 25 IDSM TA=70°C ±12 22 IDM TA=25°C Units V 28 ID TC=100°C Maximum 30 A 20 Avalanche Current C IAS 28 A Avalanche energy L=0.05mH C EAS 20 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: March 2013 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 12.8 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 32 -55 to 150 Typ 30 60 3.1 www.aosmd.com °C Max 40 75 3.9 Units °C/W °C/W °C/W Page 1 of 6 AON7524 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±10V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA TJ=125°C TJ=125°C VGS=4.5V, ID=18A 0.8 3.3 3 4 mΩ 4.4 5.8 mΩ 1 V 28 A VSD Diode Forward Voltage IS=1A,VGS=0V 0.62 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance mΩ VGS=2.5V, ID=16A 103 Crss V 4.5 VDS=5V, ID=20A Rg µA 1.2 2.6 Forward Transconductance Output Capacitance ±10 3.6 gFS Coss µA 5 0.4 Units V 1 VGS=10V, ID=20A Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz S 2250 pF 800 pF 65 pF 3.0 4.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 37 50 nC Qg(4.5V) Total Gate Charge 16 22 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 1.5 3.2 nC 5.2 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 23 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5 ns 3 ns 47.5 ns 11.3 ns 16 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: March 2013 www.aosmd.com Page 2 of 6 AON7524 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 2.5V 10V 80 VDS=5V 4.5V 80 2V 60 ID(A) ID (A) 60 125°C 40 40 25°C 20 20 VGS=1.5V 0 0 0 1 2 3 4 0 5 1 2 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 1.6 Normalized On-Resistance VGS=2.5V RDS(ON) (mΩ Ω) 4 VGS=4.5V 3 VGS=10V 2 VGS=4.5V ID=18A 1.4 VGS=10V ID=20A 1.2 VGS=2.5V ID=16A 1 0.8 1 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 8 1.0E+02 ID=20A 1.0E+01 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 6 4 1.0E-01 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: March 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7524 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=15V ID=20A Capacitance (pF) VGS (Volts) Ciss 2500 8 6 4 2 2000 1500 Coss 1000 500 0 Crss 0 0 10 20 30 40 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 200 10µs RDS(ON) limited TJ(Max)=150°C TC=25°C 10µs 100µs 10.0 DC 1.0 1ms 10ms TJ(Max)=150°C TC=25°C 100 50 0.1 0.0 0.01 150 Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 5 0.1 1 10 100 0 0.0001 VDS (Volts) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.9°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: March 2013 www.aosmd.com Page 4 of 6 AON7524 40 40 30 30 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 20 10 0 0 25 50 75 100 125 0 150 0 TCASE (° °C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: March 2013 www.aosmd.com Page 5 of 6 AON7524 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: March 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6