Datasheet

AON6506
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
VDS
ID (at VGS=10V)
30V
36A
RDS(ON) (at VGS=10V)
< 2.6mΩ
RDS(ON) (at VGS=4.5V)
< 3.8mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
V
28
A
33
IDSM
TA=70°C
±20
144
IDM
TA=25°C
Continuous Drain
Current
Units
V
36
ID
TC=100°C
Maximum
30
A
26
IAS
60
A
Avalanche energy L=0.05mH C
EAS
90
mJ
VDS Spike
VSPIKE
36
V
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
Rev 0: Feb. 2012
4.2
Steady-State
Steady-State
RθJA
RθJC
W
2.7
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
-55 to 150
Typ
24
53
1.2
www.aosmd.com
°C
Max
30
64
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6506
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
tD(on)
±100
nA
1.7
2.2
V
2.1
2.6
2.4
3
2.9
3.8
85
0.7
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.9
mΩ
mΩ
S
1
V
36
A
2719
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
5
1.2
Units
V
1
TJ=55°C
VDS=5V, ID=20A
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
pF
1204
pF
169
pF
2
3
Ω
44
60
nC
21
28
nC
9
nC
Gate Drain Charge
7
nC
Turn-On DelayTime
9.7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
5.2
ns
32.5
ns
tf
Turn-Off Fall Time
10.3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
19.6
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
42.7
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Feb. 2012
www.aosmd.com
Page 2 of 6
AON6506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
4V
VDS=5V
3.5V
100
80
4.5V
80
ID(A)
ID (A)
60
60
40
40
20
VGS=3V
20
125°C
0
0
0
1
2
3
4
0
5
1
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
1.4
4
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
25°C
VGS=4.5V
2
VGS=10V
0
VGS=10V
ID=20A
1.2
17
VGS=4.5V5
ID=20A 2
1
10
0.8
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
8
1.0E+02
ID=20A
1.0E+01
40
6
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
4
125°C
1.0E-01
1.0E-02
1.0E-03
2
25°C
25°C
1.0E-04
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Feb. 2012
4
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=15V
ID=20A
3500
8
Ciss
Capacitance (pF)
VGS (Volts)
3000
6
4
2500
2000
Coss
1500
1000
2
500
Crss
0
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10µs
10.0
100µs
1.0
TJ(Max)=150°C
TC=25°C
160
10µs
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
1ms
10ms
DC
0.1
Power (W)
ID (Amps)
10
200
1000.0
100.0
5
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
1
PD
Single Pulse
0.1
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Feb. 2012
www.aosmd.com
Page 4 of 6
AON6506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
80
Current rating ID(A)
Power Dissipation (W)
100
60
40
20
30
20
10
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=64°C/W
0.1
Single Pulse
PD
0.01
Ton
T
0.001
1E-05
Rev 0: Feb. 2012
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
www.aosmd.com
100
1000
Page 5 of 6
AON6506
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Feb. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6