3223-1

NTE3223−1, NTE3223−2, NTE3223−4
Optoisolator
NPN Transistor Output
Description:
The NTE3223−1, NTE3223−2 and NTE3223−3 are a series of optically coupled isolators which consist
of GaAs light emitting diodes and NPN silicon photo transmitters in space efficient dual−in−line plastic
packages.
The NTE3223−1 comes in a 4−Lead DIP type package with an NPN transistor output. The NTE3223−2
contains a dual NPN transistor output and is supplied in a 8−Lead DIP type package. The NTE3223−4
contains a quad NPN transistor output and is supplied in a 16−Lead DIP type package.
Features:
D High Current Transfer Ratio (80% min)
D High Isolation Voltage (5.3kVRMS, 7.5kVPK)
D High BVCEO (80Vmin)
Applications:
D Computer Terminals
D Industrial systems controllers
D Measuring instruments
D Signal transmission between systems of different potentials and impedances
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Input Diode
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70mW
Output Transistor
Collector−Emitter Voltage, BVCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Collector Voltage, BVECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Power Dissipation (Per Channel) PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Total Device
Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate linearly above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/C
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30 to +100C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +125C
Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs), TL . . . . . . . . . . . . . +260C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
Input
Forward Voltage
VF
IF = 20mA
−
1.2
1.4
V
Reverse Current
IR
VR = 4V
−
−
10
A
VCE = 20V
−
−
100
nA
Output
Collector−Emitter Dark Current
ICEO
Collector−Emitter Breakdown Voltage
BVCEO IC=1mA
80
−
−
V
Emitter−Collector Breakdown Voltage
BVECO IE=100A
6
−
−
V
80
−
600
%
−
−
0.3
V
Note 1
5300
−
−
VRMS
Note 1
7500
−
−
VPK
Coupled
Current Transfer Ratio
Collector−Emitter Saturation Voltage
Input to Output Isolation Voltage
CTR
IF = 5mA, VCE = 5V
VCE(sat) IF = 10mA, IC = 2mA
VISO
RISO
V10 = 500V (Note 1)
5x1010
−
−

Output Rise Time
tr
−
4
−
s
Output Fall Time
tf
VCE = 2V, IC = 2mA,
RL = 100
−
3
−
s
Input−output Isolation Resistance
Note 1. Measured with input leads shorted together and output leads shorted together.
Pin Connection Diagram
NTE3223−1
NTE3223−4
Anode
1
4 Collector
Cathode
2
3 Emitter
NTE3223−2
Anode
1
8 Collector
Cathode
2
7 Emitter
Anode
3
6 Collector
Cathode
4
5 Emitter
Anode
1
16 Collector
Cathode
2
15 Emitter
Anode
3
14 Collector
Cathode
4
13 Emitter
Anode
5
12 Collector
Cathode
6
11 Emitter
Anode
7
10 Collector
Cathode
8
9 Emitter
NTE3223−1
4
1
3
2
.252
(6.4)
.180 (4.58)
.176
(4.47)
.099 (2.5)
Min
.309
(7.85)
.100 (2.54)
NTE3223−2
8
5
.250 (6.35)
1
4
.390 (9.9) Max
.020 (.508) Min
Seating
.185
(4.7)
Max
Plane
.100 (2.54)
.115 (2.94) Min
NTE3223−4
16
9
.260
(6.6)
Max
1
8
.785 (19.9) Max
.300 (7.62)
.200 (5.08)
Max
.245
(6.22)
Min
.100 (2.54)
.700 (17.7)