P12N6 5 WF WFP N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.78Ω )@V GS =10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Po wer MOS FE T is pro du ced usi ng Win se mi ’s adva nce d planar stripe, VDMOS technology. This latest technology has been espec ially designed to minimize on-st ate re sist ance, have a high ru gged ava lanche cha ract erist ics. This devices is spe cially well suited for AC-DCswitching power supplies, DC-DCpower converters, high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol V DSS Parameter Value Units Drain Source Voltage 650 V Continuous Drain Current(@Tc=25℃) 12 A Continuous Drain Current(@Tc=100℃) 7.6 A 48 A ±30 V ID IDM Drain Current Pulsed (Note1) V GS Gate to Source Voltage E AS Single Pulsed Avalanche Energy (Note 2) 990 mJ E AR Repetitive Avalanche Energy (Note 1) 22 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Total Power Dissipation(@Tc=25℃) 250 W Derating Factor above 25℃ 2.0 W/℃ -55~150 ℃ 300 ℃ PD TJ, Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter Min Value Typ Max Units R QJC Thermal Resistance, Junction-to-Case - - 0.5 ℃/W RQCS Thermal Resistance, Case-to-Sink - - - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev.A Oct.2010 Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. P12N6 5 WF WFP N65 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Symbol Test Condition Min Type Max Unit IGSS V GS = ±30 V, VDS = 0 V - - ±100 nA V (BR)GSS IG = ±10 μA, V DS = 0 V ±30 - - V V DS = 650 V, V GS = 0 V - - 10 μA V DS = 480 V, Tc = 125℃ - - 100 μA IDSS V (BR)DSS ID = 250 μA, V GS = 0 V 650 - - V Gate threshold voltage V GS(th) V DS = 10 V, ID =250 μA 3 - 4.5 V Drain−source ON resistance RDS(ON) V GS = 10 V, ID = 6A - 0.64 0.78 Ω Forward Transconductance gfs V DS = 50 V, ID = 6A - 6.4 - S Input capacitance Ciss V DS = 25 V, - 1830 - Reverse transfer capacitance Crss V GS = 0 V, - 2.2 - Output capacitance Coss f = 1 MHz - 155 - V DD =325 V, - 50 - ton ID =12A - 49 - tf R G=25 Ω - 310 - - 54 - - 51.7 - - 9.6 - - 18.6 - Rise time Turn−on time tr Switching time Fall time Turn−off time ns (Note4,5) toff Total gate charge (gate−source pF V DD = 520 V, Qg plus gate−drain) V GS = 10 V, nC Gate−source charge Qgs Gate−drain (“miller” ) Charge Qgd ID = 12 A (Note4,5) Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Un it Continuous drain reverse current IDR - - - 12 A Pulse drain reverse current IDRP - - - 48 A Forward voltage (diode) V DSF IDR = 12 A, V GS = 0 V - - 1.4 V Reverse recovery time trr IDR = 12 A, V GS = 0 V, - 450 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 5.0 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14mH,IAS=12A,VDD=95V,RG=25Ω ,Starting TJ=25℃ 3.ISD≤ 12A,di/dt≤ 200A/us, V DD<BVDSS,STARTING TJ =25℃ 4.Pulse Test: Pulse Width≤ 300us,Duty Cycle≤ 2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance P12N6 5 WF WFP N65 Fig.1 On-State Characteristics Fig.3 On-Resistance variation vs Drain Current Fig.8 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Current Characteristics Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance P12N6 5 WF WFP N65 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, keep you advance P12N6 5 WF WFP N65 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance P12N6 5 WF WFP N65 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance P12N6 5 WF WFP N65 TO-220 Package Dimension Unit:mm 7/7 Steady, keep you advance