1N60 WFD FD1 Sili con N-Ch annel MOS FET lic Cha OSF Features ■ 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol VDSS Value Units Drain Source Voltage Parameter 600 V Continuous Drain Current(@Tc=25℃) 1.3 A Continuous Drain Current(@Tc=100℃) 0.84 A 5.0 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 78 mJ EAR Repetitive Avalanche Energy (Note1) 3.9 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 5.5 V/ ns 32 W 0.24 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Maximum lead Temperature for soldering purposes Thermal Characteristics Symbol Parameter RQJC Thermal Resistance , Junction -to -Case RQCS Thermal Resistance , Case-to-Sink RQJA Thermal Resistance , Junction-to -Ambient Value Units Min Typ Max - - 3.9 ℃/W 0.5 - - ℃/W - - 110 ℃/W Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFD 1N60 FD1 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Symbol Test Condition Type Max Unit IGSS VGS=±30V,V DS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=600V,VGS=0V - - 10 µA VDS=480V,Tc=125℃ - 100 µA IDSS Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V Break Voltage Temperature △BVDSS/ ID=250µA,Referenced to △TJ Coefficient Min 25℃ 600 - - V - 0.5 - V/℃ Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=0.65A - 7.7 8.5 Ω Forward Transconductance gfs VDS=40V,ID=0.65A - 1.3 - S Input capacitance Ciss VDS=25V, - 247 318 Reverse transfer capacitance Crss VGS=0V, - 5 6.5 Output capacitance Coss f=1MHz - 23 30 tr VDD=300V, - 11 26 ton ID=1.3A , - 33 72 - 26 59 - 26 59 - 9.1 12 - 1.2 - - 4.5 - Rise time Turn-on time Switching time Fall time Turn-off time tf ns RG=25Ω, (Note4,5) toff Total gate charge(gate-source pF VDD=480V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=1.3A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 1.3 A Pulse drain reverse current IDRP - - - 5.0 A Forward voltage(diode) VDSF IDR=1.3A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=1.3A,VGS=0V, - 163 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 0.85 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=92mH IAS=1.3A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤1.3A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance 1N60 WFD FD1 Fig.1 On-State Characteristics Fig.2 Transfer Current characteristics Fig.3 On Resistance variation vs Fig.4 Body Diode Forward Voltage Drain Current Variation With Source Current And temperature Fig.5 On-Resistance Variation vs Fig.6 Gate Charge Characteristics Junction Temperature 3/7 Steady, keep you advance WFD 1N60 FD1 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, keep you advance WFD 1N60 FD1 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance WFD 1N60 FD1 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance WFD 1N60 FD1 2 Pa ckage Dim ension TO25 252 Pac Dime Unit:mm 7/7 Steady, keep you advance