WFF12N65 Product Description Silicon N-Channel MOSFET Features D ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 39nC) ■ Fast Switching Capability ■ 100%Avalanche Tested G ■ RoHS product S General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies, DC-DC power converters,high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol Parameter VDSS Value Units Drain Source Voltage 650 V Continuous Drain Current(@Tc=25℃) 12* A Continuous Drain Current(@Tc=100℃) 7.6* A 48* A ±30 V 880 mJ 12 A ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR EAR Repetitive Avalanche Energy (Note 1) 25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 51 W 0.41 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg Junction and Storage Temperature Channel Temperature TL * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Value Parameter Min Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 2.45 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W WT-F057-Rev.A1 Jan.2014 WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WFF12N65 Product Description Silicon N-Channel MOSFET Electrical Characteristics (Tc = 25°C) Characteristics Symbol Gate leakage current Test Condition Min Type Max Unit - - ±100 nA ±30 - - V VDS = 650 V, VGS = 0 V - - 1 μA VDS = 520 V, Tc = 125℃ - - 10 μA VGS = ±30 V, VDS = 0 V IGSS Gate−source breakdown IG = ±10 μA, VDS = 0 V V(BR)GSS voltage Drain cut−off current IDSS Drain−source breakdown V(BR)DSS ID = 250 μA, VGS = 0 V 650 - - V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 3 - 4.5 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 6A - 0.71 0.78 Ω Forward Transconductance gfs VDS = 40 V, ID = 6A - 13 - S Input capacitance Ciss VDS = 25 V, - 1790 2410 Reverse transfer capacitance Crss VGS = 0 V, - 23 31 Output capacitance Coss f = 1 MHz - 175 229 VDD =300 V, - 133 175 - 78 102 - 104 160 - 233 305 - 39 52 - 8.5 - - 20 - voltage Turn-On Rise time Switching Turn-on delay time tr ID =12A Td(on) ns RG=25 Ω time Turn-On Fall time tf Turn-off delay time Td(off) pF (Note4,5) Total gate charge (gate−source plus VDD = 480 V, Qg gate−drain) VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd nC ID = 12 A (Note4,5) Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 12 A Pulse drain reverse current IDRP - - - 48 A Forward voltage (diode) VDSF IDR = 12 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 12 A, VGS = 0 V, - 418 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 4.85 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/8 WFF12N65 Product Description Silicon N-Channel MOSFET VG S To p 15V 10V 8V 7V 6 .5 V 6V 5 .5 V B o tto m 5 V 。 25 C 。 150 C I D [A ] I D [A] 10 10 1 N o te s: 1 .2 5 0 u s p u lse te st 2 .Tc=2 5 。 C 1 1 N otes: 1.250us pulse test 2.V D S =40V 0 .1 10 2 4 6 V D S [V] 8 10 VG S [V] Fig.2 Transfer Characteristics Fig.1 On-Region Characteristics 0 .8 5 0 .8 0 10 V G S =1 0 V 0 .7 0 2 5 °C I DR [A] R DS(on)[Ω] 0 .7 5 0 .6 5 1 1 5 0 °C V G S =2 0 V 0 .6 0 0 .5 5 Notes: 1.250µs pulse test 2.V G S =0V N o t e : Tj = 2 5° C 0 .5 0 0 2 4 6 8 10 12 14 16 18 20 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 I D [A] 0.8 0.9 1.0 1.1 1.2 1.3 1.4 V S D [V] Fig.3 On-Resistance variation vs Drain Current and Gate Voltage Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature 12 3000 Ci ss=Cg s+Cg d (Cd s=sh o rte d ) VD S =480V Co ss=Cd s+Cg d Crss=Cg d 2500 10 2000 C iss 1500 1000 C oss 500 N o te : 1 .V G S =0 V 2 .f=1 MH z C rs s 0 10 V GS G ate S ou rce Volta ge [V ] Ca pacit an ce [pF ] VD S =300V 8 VD S =120V 6 4 2 0 -1 10 0 10 0 1 10 Fig.5 Capacitance Characteristics WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 30 40 Qg Toltal Gate Charge[nC] V D S [V] www.winsemi.com 20 WIN SEM I Fig.6 Gate Charge Characteristics M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/8 WFF12N65 Product Description Silicon N-Channel MOSFET 1 .2 3 .0 BV DS(Normalixed) 2 .5 R DS(on) (Normalized) 1 .1 1 .0 0 .9 2 .0 1 .5 1 .0 Notes: 1.V G S =0V 2.I D=250µA 0 .8 -7 5 -5 0 -2 5 25 0 50 75 100 125 Notes: 1.VG S =10V 2.I D=6.0A 0 .5 0 .0 -75 150 -50 -25 25 0 TJ [°C] 50 75 100 125 150 TJ [°C] Fig.7 Breakdown Voltage Variation vs. Temperature Fig.8 On-Resistance Variation vs. Temperature 14 Operation in This Area is limite d b y R D S (o n ) 10 12 2 I D Drain Current[A] I D DrainCurrent[A] 10µs 100µs 10 1 1ms 10ms 10 0 10 8 6 4 1 0 0 ms 10 Notes: 1 . Tc =25。C 。 2.TJ=150 C 3.Single pulse -1 10 0 10 VD S 2 DC 1 102 Drain-Source Voltage[V] 10 0 25 3 50 100 125 150 Fig.10 Maximum Drain Current vs Case Temperature Fig.9 Maximum Safe Operation Area ZθJC (t),Thermal Response 75 。 Tc Case Temperature[ C ] D=0.5 1 0 .2 0 .1 * N o te： 0 .1 。 1.Zθ J C (t)=2.45 C /W Max. 2.D uty Factor,D =t1/t2 3.T JM-T C=P DM* Zθ J C (t) 0 .0 5 0 .0 2 0 .0 1 PD M t1 Single pulse t2 0.01 1 E -5 1 E-4 1 E-3 0.01 1 0.1 10 t1 ,Square Wave Pulse Duration [sec] Fig.11 Transient Thermal Response curve WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/8 WFF12N65 Product Description Silicon N-Channel MOSFET 50K Ω 12V VG S Same type as D U T Qg 200nF 10V 300nF VD S VG S Qg s Qg d DUT 3m A Ch a rg e Fig.12 Gate Test circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr td(off) to n tf to f f Fig.13 Resistive Switching Test Circuit & Waveform L EA S = VD S B V DSS B V D S S - VD D B V DSS IA S ID RG VD D DUT 10V 1 L IA S 2 2 I D( t) VD S( t ) VD D tp tp Tim e Fig.14 Uncamped Inductive Switching Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 5/8 WFF12N65 Product Description Silicon N-Channel MOSFET DUT VD S IS D L Driver RG S am e Type as DUT VG S VD D dv/dt controlled by RG IS D conteolled by pulse period VG S Gate Pulse Width Gate Pulse Period D = (Driver) 10V IF M ,Body Diode Forward Current IS D di/dt (DUT) IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VD D VS D Body Diode Forward Voltage Drop Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/8 WFF12N65 Product Description Silicon N-Channel MOSFET TO-220F Package Dimension U n it:m m E 符 号 Symbol M IN M AX A 4 .5 4 .9 B - 1 .4 7 b 0 .7 0 .9 c 0 .4 5 0 .6 D 1 5 .6 7 1 6 .0 7 E 9 .9 6 1 0 .3 6 Q F L2 D P e L B b C 2.54TYPE F 2 .3 4 2 .7 4 L 1 2 .5 8 1 3 .3 8 L2 3 .1 3 3 .3 3 ФP 3 .0 8 3 .2 8 Q 3 .2 3 .4 Q1 2 .5 6 2 .9 6 Q1 e A e WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 7/8 WFF12N65 Product Description Silicon N-Channel MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 8/8