WFU1N60C Product Description
Silicon N-Channel MOSFET
D
Features
�
1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 9.1nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
Th is Power MOSFET is produced using Winsemi ’ s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well suited
for high efficiency switch mode power supply. electronic Lamp ballasts
based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
1.2
A
Continuous Drain Current(@Tc=100℃)
0.84
A
5.0
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
78
mJ
EAR
Repetitive Avalanche Energy
(Note1)
3.9
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.5
V/ ns
30
W
0.05
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
4.17
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
120
℃/W
WT-F025-Rev.A0 May.2013
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WFU1N60C Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
100
µA
IDSS
VDS=480V,TC=125℃
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/△TJ
ID=250 µA,VGS=0V
600
-
-
V
-
0.65
-
V/℃
2.0
-
4.0
V
ID=1mA,Referenced to 25℃
Coefficient
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=0.6A
-
7.7
8.5
Ω
Forward Transconductance
gfs
VDS=40V,ID=0.6A
-
1.3
-
S
Input capacitance
Ciss
VDS=25V,
-
247
319
Reverse transfer capacitance
Crss
VGS=0V,
-
4.9
6.4
Output capacitance
Coss
f=1MHz
-
23
30
VDD=300V,
-
33
72
Turn-On Rise time
tr
Turn-on delay time
Td(on)
ID=1.2A
-
11
26
Turn-On Fall time
tf
RG=25Ω
-
26
59
Turn-off delay time
Td(off)
-
26
59
-
9.1
12
-
1.2
-
-
4.5
-
Min
Type
Switching time
pF
ns
(Note4,5)
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=1.2A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Max
Unit
Continuous drain reverse current
IDR
-
-
-
1.2
A
Pulse drain reverse current
IDRP
-
-
-
5.0
A
Forward voltage(diode)
VDSF
IDR=1.2A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=1.2A,VGS=0V,
-
163
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
0.85
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=92mH IAS=1.2A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤1.2A,di/dt≤200A/us,VDD<BVDSS,Startiong TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFU1N60C Product Description
Silicon N-Channel MOSFET
VG S
To p
15V
10V
8V
7V
6 .5 V
6V
5 .5 V
B ottom 5 V
I D [A]
1
I D [A]
1
1 5 0 °C
2 5 °C
Notes:
1.250µs pulse test
2.VD S =40V
Notes:
1.250µs pulse test
2 .Tc =2 5 °C
0 .1
0 .1
1
10
2
VD S [V]
4
6
8
10
VG S [V]
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
V G S =20V
11
V G S =10V
10
1
ID R[A]
R DS(on) [Ω]
12
150°C
25°C
9
8
Notes:
1.250µs pulse test
2.VG S =0V
Note:T J=25°C
7
0.1
0 .5
1 .0
1 .5
2 .0
0.5
2 .5
0.6
0.7
0.8
I D [A]
1.0
1.1
VS D [V]
Fig.3 On-Resistance Variation vs Drain
current and gate voltage
Fig.4 Body diode forward voltage variation
vs source current and temperature
12
400
Ciss=Cgs+Cgd(Cds=shorted)
V D S =480V
Coss=Cds+Cgd
C rss=C gd
10
C is s
Coss
200
100
Notes:
1.VG S =0V
2.f=1MHz
C rs s
V GS Gate Source Voltage[V]
V D S =300V
300
Capac it ance[pF]
0.9
8
V D S =120V
6
4
2
0
0
1 0 -1
100
0
101
2
VD S [V]
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10
Fig.6 Gate Charge Characteristics
Fig.5 Capacitance characteristics
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4
6
Q g Toltal Gate Charge[nC]
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WFU1N60C Product Description
Silicon N-Channel MOSFET
3 .0
1 .1 5
2 .5
R (on ) (Normalized)
1 .0 5
1 .0 0
Notes:
1.VG S =0V
2.I D=250µA
0 .9 5
2 .0
1 .5
1 .0
Notes:
1.VG S =10V
2.ID =0.6A
0 .5
0 .9 0
-7 5
-5 0
-2 5
0
50
25
75
100
125
0 .0
150
-7 5
-5 0
-2 5
0
25
Fig.7 Breakdown voltage variation
vs temperature
50
75
。
TJ [ C]
TJ [°C]
100
125
150
Fig.8 On-Resistance variation vs
temperature
1 .4
100
Operation in This Area
is Limited by R DS(on)
1 .2
10
1 .0
I D [A]
100µs
I D [A]
1m s
1
0 .8
0 .6
DC
0 .4
Notes:
0 .1
1.Tc = 25°C
2 . T J= 150°C
3.S ingle pulse
0 .2
0 .0
0 .0 1
1
10
100
25
1000
50
75
100
125
150
Tc[°C]
VD S [V]
Fig.10 Maximum Drain Current vs
Case temperature
Fig.9 Maximum Safe Operation Area
ZθJC (t),Thermal Response
BV DSS(Normalized)
1 .1 0
D= 0. 5
100
* N o te ：
0. 2
。
1.Zθ J C (t)=4.17 C/W Max.
2.Duty Factor,D=t 1/t 2
3.T JM-T C=P DM* Zθ J C (t)
0. 1
0. 05
10
PD M
0. 02
0. 01
-1
t1
single pulse
1 0 -5
1 0 -4
t2
1 0 -3
1 0 -2
1 0 -1
100
101
t 1 ,Square Wave Pulse Duration[sec]
Fig.11 Transient thermal Response Curve
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WFU1N60C Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFU1N60C Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
Gate Pulse Width
Gate Pulse Period
D =
(Driver)
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFU1N60C Product Description
Silicon N-Channel MOSFET
TO-251 Package Dimension
U n it:m m
E
A
F
符 号
symbol
M IN
M AX
A
2 .1 9
2 .3 8
b
0 .6 4
0 .8 9
D1
E1
L2
D
c
Q1
0 .4 6
0 .5 8
D
5 .9 7
6 .2 2
D1
0 .8 9
1 .2 7
E
6 .3 5
6 .7 3
E1
5 .2 1
5 .4 6
e
2 .2 8 T Y P
F
0 .4 6
0 .5 8
L
8 .8 9
9 .6 5
L2
2 .2 5
2 .3 5
Q1
1 .0 2
1 .1 4
L
b
c
e
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WFU1N60C Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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