WFF10N65 Product Description
Silicon N-Channel MOSFET
Features
�
10A,650V,RDS(on)(Max 0.95Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 34nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Isolation Voltage(VISO=4000V AC)
�
Improved dv/dt capability
D
G
S
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for AC-DC switching
power supplies,DC-DC power converters,high voltage h-bridge motor drive
PWM.
Absolute Maximum Ratings
Symbol
VDSS
Value
Units
Drain Source Voltage
Parameter
650
V
Continuous Drain Current(@Tc=25℃)
10*
A
Continuous Drain Current(@Tc=100℃)
6.0*
A
40*
A
±30
V
(Note2)
712
mJ
（note 1）
9.5
A
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
(Note1)
17.5
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
Total Power Dissipation(@Tc=25℃)
50
W
Derating Factor above 25℃
0.4
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.5
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
WT-F018-Rev.A1 Jan.2014
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WFF10N65 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=650V,VGS=0V
-
-
1
µA
10
µA
-
V
IDSS
VDS=520V,Tc=125℃
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
Breakdown Voltage Temperature
650
-
ID=250μA, referenced to
ΔBVDSS/ΔTJ
Coefficient
0.68
V/℃
25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
3
-
4.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=5A
-
0.84
0.95
Ω
Forward Transconductance
gfs
VDS=40V,ID=5A
-
8.2
-
S
Input capacitance
Ciss
VDS=25V,
-
1610
2065
Reverse transfer capacitance
Crss
VGS=0V,
-
20
26
Output capacitance
Coss
f=1MHz
-
156
210
tr
VDD=300V,
-
109
148
td(on)
ID=10A，
-
68
90
tf
RG=25Ω，
-
85
165
-
213
300
-
34
45
-
6.9
-
-
13
-
Min
Type
Turn-On rise time
Turn-On delay time
pF
Switching time
ns
Turn-Off Fall time
Turn-Off delay time
(Note4,5)
td(off)
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=10A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Max
Unit
Continuous drain reverse current
IDR
-
-
-
10
A
Pulse drain reverse current
IDRP
-
-
-
40
A
Forward voltage(diode)
VDSF
IDR=10A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=10A,VGS=0V,
-
425
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
4.3
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=14.5mH IAS=10A,VDD=50V, RG=25Ω ,Starting TJ=25℃
3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF10N65 Product Description
Silicon N-Channel MOSFET
To p
VG S
15V
10V
9V
8V
7V
6 .5 V
6V
5 .5 V
B ot t om 5 V
10
I D [A]
I D [A]
10
1 5 0 °C
2 5 °C
1
Notes:
1.250µs pulse test
2 .Tc =2 5 °C
1
Notes:
1.250µs pulse test
2.V D S =40V
0 .1
1
2
10
4
6
8
10
VG S [V]
VD S [V]
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
1 .0 0
0 .9 5
10
VG S =10V
0 .8 5
I DR[A]
R DS(on) [Ω ]
0 .9 0
0 .8 0
2 5 °C
1 5 0 °C
1
0 .7 5
VG S =20V
0 .7 0
Notes:
1.250µs pulse test
2.VG S =0V
Note:TJ =25°C
0 .6 5
0 .6 0
0
2
4
6
8
10
12
14
16
18
0 .1
0 .2
0 .3
0 .4
0 .5
0 .6
0 .7
0 .8
0 .9
1 .0
1 .1
1 .2
1 .3
VS D [V]
I D [A]
Fig.3 On-Resistance variation vs Drain
Current and Gate Voltage
Fig.4 Body Diode Forward Voltage Variation
with Source Current and Temperature
12
3X 103
VD S =480V
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
10
V GS Gate Source Voltage[V]
Capacitance[pF]
Crss=Cgd
2X 103
1X 103
0
1 0 -1
101
VD S =120V
8
6
4
2
0
100
VD S =300V
0
10
VD S Drain-Source Voltage[V]
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30
40
Qg Toltal Gate Charge[nC]
Fig.5 Capacitance Characteristics
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Fig.6 Gate Charge Characteristics
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WFF10N65 Product Description
Silicon N-Channel MOSFET
4 .0
1 .2
BV DS (Normalized)
3 .5
3 .0
R (on ) (Normalized)
1 .1
1 .0
0 .9
Notes:
1.VG S =0V
2.ID =250µA
0 .8
-7 5
-5 0
-2 5
0
25
50
75
100
125
2 .5
2 .0
1 .5
1 .0
Notes:
1.VG S =10V
2.ID=5A
0 .5
0 .0
-7 5
150
-5 0
-2 5
0
25
Fig.7 Breakdown Voltage Variation
vs. Temperature
50
75
。
TJ [ C]
TJ [°C]
100
125
150
Fig.8 On-Resistance Variation vs
Junction Temperature
10
Operation in This A rea
is Limited by R DS (on)
10
2
8
10
10
100µs
1
1ms
10ms
100ms
0
6
4
Notes:
1.Tc=25°C
2 . T J =150°C
3.Si ngl e pul se
10
I D Drain Cur ren t[A]
ID Drain Current[A]
10µs
2
D C
-1
10
0
101
102
VD S Drain-Source Voltage[V]
10
0
25
3
50
75
100
125
150
Tc Case Temperature[°C]
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current
vs. Case Temperature
ZθJC (t),Thermal Response
1
D = 0 .5
0 .1
0 .2
* N o te：
0 .1
1.Zθ J C (t)=0.7°C/W Max.
2.Duty Factor,D=t1/t2
3.T JM-T C=P DM* Zθ J C (t)
0 .0 5
0 .0 2
PD M
0 .0 1
t1
Single pulse
1 E -5
1 E -4
1 E -3
t2
0 .0 1
0 .1
1
10
t 1 Square Wave Pulse Duration[sec]
Fig.11 Transient Thermal Response curve
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WFF10N65 Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Uncamped Inductive Switching Test Circuit & Waveform
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WFF10N65 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
Gate Pulse Width
Gate Pulse Period
D =
(Driver)
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF10N65 Product Description
Silicon N-Channel MOSFET
TO-220F Package Dimension
U n it:m m
E
符 号
Symbol
M IN
M AX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
Q
F
L2
D
P
e
L
B
b
C
2.54TYPE
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
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WFF10N65 Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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