WFF10N65L Product Description Silicon N-Channel MOSFET Features D � 10A,650V,RDS(on)(Max 0.83Ω)@VGS=10V � Ultra-low Gate Charge(Typical 34nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability G S General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge. Absolute Maximum Ratings Symbol VDSS Value Units Drain Source Voltage Parameter 650 V Continuous Drain Current(@Tc=25℃) 10* A Continuous Drain Current(@Tc=100℃) 6.0* A 40* A ±30 V ID IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 61 mJ EAR Repetitive Avalanche Energy (Note1) 16 mJ IAR Avalanche Current (Note1) 10 A Peak Diode Recovery dv /dt (Note3) 5.0 V/ ns Total Power Dissipation(@Tc=25℃) 50 W Derating Factor above 25℃ 0.4 W/℃ -55~150 ℃ 300 ℃ dv/dt (Note1) PD TJ,Tstg TL Junction and Storage Temperature Channel Temperature *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Value Parameter Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 2.1 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W WT-F097-Rev.A0 Oct.2015 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 1015 WFF10N65L Product Description Silicon N-Channel MOSFET Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V - 0.68 - V/℃ - - 10 Breakdown voltage Temperature △BVDSS/△TJ ID=250µA,Referenced to 25℃ Coefficient VDS=650V,VGS=0V Drain cut -off current IDSS µA VDS=520V, TC=125℃ Drain -source breakdown voltage V(BR)DSS 100 ID=250 µA,VGS=0V 650 - - V Gate threshold voltage VGS(th) VDS = VGS,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=5A - 0.76 0.83 Ω Forward Transconductance gfs VDS=40V,ID=5A - 5.7 - S Input capacitance Ciss VDS=25V, - 1272 1662 Reverse transfer capacitance Crss VGS=0V, - 12.5 16 Output capacitance Coss f=1MHz - 102 133 tr VDD=325V, - 76 98 td(on) ID=10A, - 31 38 tf RG=25Ω, - 55 72 - 86 109 - 34 55 - 8.2 - - 18.5 - Turn-On rise time Turn-On delay time pF Switching time ns Turn-Off Fall time Turn-Off delay time (Note4,5) td(off) Total gate charge(gate-source VDD=520V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=10A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 10 A Pulse drain reverse current IDRP - - - 40 A Forward voltage(diode) VDSF IDR=10A,VGS=0V - 1.05 1.3 V Reverse recovery time trr IDR=10A,VGS=0V, - 455 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 2.9 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=0.5mH IAS=15A,VDD=50V,RG=25Ω ,Starting TJ=25℃ 3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 2/8 WFF10N65L Product Description Silicon N-Channel MOSFET VG S To p 15V 10V 9V 8V 7V 6 .5 V 6V 5 .5 V B ot t om 5 V 10 I D [A] I D [A] 10 1 5 0 °C 2 5 °C 1 Notes: 1.250µs pulse test 2 .Tc =2 5 °C 1 Notes: 1.250µs pulse test 2.V D S =40V 0 .1 1 2 10 4 6 8 10 VG S [V] VD S [V] Fig.1 On-Region Characteristics Fig.2 Transfer characteristics 1 .0 0 0 .9 5 10 VG S =10V 0 .8 5 I DR[A] R DS(on) [Ω ] 0 .9 0 0 .8 0 2 5 °C 1 5 0 °C 1 0 .7 5 VG S =20V 0 .7 0 Notes: 1.250µs pulse test 2.VG S =0V Note:TJ =25°C 0 .6 5 0 .1 0 .2 0 .6 0 0 2 4 6 8 10 12 14 16 18 0 .3 0 .4 0 .5 0 .6 0 .7 I D[A] Fig.3 On-Resistance variation vs Drain Current and Gate Voltage 10 V GS Gate Source Voltage[V] 100 1X 103 10 1 0 11 01 1 0 01 0 0 10 6 4 2 0 2 0 10 WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 20 30 40 Qg Toltal Gate Charge[nC] Fig.6 Gate Charge Characteristics Fig.5 Capacitance Characteristics MICROELECTRONICS 1 .3 VD S =120V 8 VD S Drain-S ource Volt age[ V ] WINSEMI 1 .2 VD S =300V VD S Drain-Source Voltage[V] www.winsemi.com 1 .1 VD S =480V 2X 103 00 1 .0 12 Ciss=Cgs+Cgd(Cds=shorted) Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd C rss=Coss=Cds+Cgd C gd C rs s =C gd 1 10 0- 1- 1 0 .9 Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature 1000 Capacitance[pF] Capacitance [pF] 1 030X010 03 0 .8 VS D [V] WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 3/8 WFF10N65L Product Description Silicon N-Channel MOSFET 4 .0 1 .2 BV DS (Normalized) 3 .5 3 .0 R (on ) (Normalized) 1 .1 1 .0 0 .9 2 .5 2 .0 1 .5 1 .0 Notes: 1.VG S =0V 2.ID =250µA 0 .8 -7 5 -5 0 -2 5 0 50 25 75 100 125 Notes: 1.VG S =10V 2.ID=4.75A 0 .5 0 .0 -7 5 150 -5 0 -2 5 0 25 Fig.7 Breakdown Voltage Variation vs. Temperature 50 75 。 TJ [ C] TJ [°C] 100 125 150 Fig.8 On-Resistance Variation vs. Temperature 10 Operation in This A rea is Limited by R DS (on) 10 2 8 10 10 100µs 1 1ms 10ms 100ms 0 6 4 Notes: 1.Tc=25°C 2 . T J =150°C 3.Si ngl e pul se 10 I D Drain Cur ren t[A] ID Drain Current[A] 10µs 2 DS -1 10 0 101 102 VD S Drain-Source Voltage[V] 10 0 25 3 50 75 100 125 150 Tc Case Temperature[°C] Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case Temperature ZθJC (t),Thermal Response 1 D = 0 .5 0 .1 0 .2 * N o te : 0 .1 1.Zθ J C (t)=0.7°C/W Max. 2.Duty Factor,D=t1/t2 3.T JM-T C=P DM* Zθ J C (t) 0 .0 5 0 .0 2 PD M 0 .0 1 t1 Single pulse 1 E -5 1 E -4 1 E -3 t2 0 .0 1 0 .1 1 10 t 1 Square Wave Pulse Duration[sec] Fig.11 Transient Thermal Response curve WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 4/8 WFF10N65L Product Description Silicon N-Channel MOSFET 50K Ω 12V VG S Same type as D U T Qg 200nF 10V 300nF VD S VG S Qg s Qg d DUT 3m A Ch a rg e Fig.12 Gate Test circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr td(off) to n tf to f f Fig.13 Resistive Switching Test Circuit & Waveform L EA S = VD S B V DSS B V D S S - VD D B V DSS IA S ID RG VD D DUT 10V 1 L IA S 2 2 I D( t) VD S( t ) VD D tp tp Tim e Fig.14 Uncamped Inductive Switching Test Circuit & Waveform WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 5/8 WFF10N65L Product Description Silicon N-Channel MOSFET DUT VD S IS D L Driver RG S am e Type as DUT VG S VD D dv/dt controlled by RG IS D conteolled by pulse period VG S D = (Driver) Gate Pulse Width Gate Pulse Period 10V IF M ,Body Diode Forward Current IS D di/dt (DUT) IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VD D VS D Body Diode Forward Voltage Drop Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 6/8 WFF10N65L Product Description Silicon N-Channel MOSFET TO-220F Package Dimension U n it:m m E 符 号 Symbol M IN M AX A 4 .5 4 .9 B - 1 .4 7 b 0 .7 0 .9 c 0 .4 5 0 .6 D 1 5 .6 7 1 6 .0 7 E 9 .9 6 1 0 .3 6 Q F L2 D P e L B b C 2.54TYPE F 2 .3 4 2 .7 4 L 1 2 .5 8 1 3 .3 8 L2 3 .1 3 3 .3 3 ФP 3 .0 8 3 .2 8 Q 3 .2 3 .4 Q1 2 .5 6 2 .9 6 WINSEMI MICROELECTRONICS Q1 e A e WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS 7/8 WFF10N65L Product Description Silicon N-Channel MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 8/8